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Discrete Semiconductors Datasheets

588 Discrete Semiconductors datasheets read into specs, pinouts and ratings. Parts from onsemi, Diodes and Infineon Technologies.

Discrete Semiconductors datasheets, page 3

588 parts · page 3 of 20. Most used first, then by part number.

2N2222A

onsemi

Silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for high speed switching applications at collector current up to 500mA, featuring useful current gain, low leakage currents, and low saturation voltage.

NPN High Speed Switching TransistorTO-18

2N3906

onsemi

PNP Silicon General Purpose Transistor

PNP Silicon General Purpose TransistorTO-92

2N4921G

onsemi

Medium-power plastic NPN silicon transistor for driver circuits, switching, and amplifier applications; 40 V, 1 A continuous, 30 W (discontinued part).

NPN Medium-Power Silicon TransistorTO-225

2N4922G

onsemi

60V, 1A continuous (3A peak), 30W medium-power plastic NPN silicon transistor for driver, switching, and amplifier applications; complement to PNP 2N4920G.

Medium-Power NPN Silicon TransistorTO-225

2N4923G

onsemi

80V, 1A (3A peak), 30W medium-power plastic NPN silicon transistor for driver circuits, switching, and amplifier applications; complement to PNP 2N4920G

NPN Medium-Power Silicon TransistorTO-225

2N7000

onsemi

60 V, 0.35 A N-channel STripFET power MOSFET in TO-92 with low gate charge and low threshold drive, intended for switching applications (obsolete product)

N-channel Power MOSFETTO-92

2N7002K-13

Diodes Incorporated

60V N-channel enhancement mode MOSFET with low on-resistance and fast switching, ESD protected up to 2kV, for motor control, power management and backlighting

N-Channel Enhancement Mode MOSFETSOT23

2N7002K-7

Diodes Incorporated

DIODES INC. - 2N7002K-7 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V

N-Channel Enhancement Mode MOSFETSOT-23

2N7002KQ

Diodes Incorporated

60V N-channel enhancement mode MOSFET with low on-resistance and ESD protection up to 2kV; the datasheet notes an automotive-compliant version is available under the 2N7002KQ part number

N-Channel Enhancement Mode MOSFETSOT23

2N7002T

Diodes Incorporated

MOSFETs

SOT-523

2SA1020

onsemi

One-watt high current PNP bipolar transistor, 50 V, 2 A continuous collector current, Pb-free TO-92 package

PNP High Current TransistorTO-92

2SA1943

onsemi

Datasheet is for the NPN complement parts (2SC5200 / FJL4315) of the 2SA1943 PNP audio power transistor; 250 V, 17 A, 150 W general-purpose and hi-fi audio output amplifier transistor.

NPN Epitaxial Silicon Power Transistor

2SA2039

onsemi

50V, 5A low collector-emitter saturation voltage PNP bipolar transistor (complementary to 2SC5706) for DC/DC converters, relay, lamp and motor drivers, and flash

PNP Low VCE(sat) Bipolar Transistor

2SC5200

onsemi

High-power NPN epitaxial silicon BJT for high-fidelity audio output amplifiers and general purpose power amplification, 250 V / 17 A / 150 W, complement to 2SA1943 / FJL4215

NPN Epitaxial Silicon Power TransistorTO-264-3

2SC5242

onsemi

High-voltage (250 V), 17 A NPN epitaxial silicon power transistor with 150 W dissipation and 30 MHz bandwidth, intended for high-fidelity audio output amplifiers

NPN Epitaxial Silicon Power Transistor

2SC5706

onsemi

50V, 5A NPN bipolar transistor with low collector-to-emitter saturation voltage, for DC/DC converters, relay/lamp/motor drivers and flash applications (PNP complement 2SA2039).

NPN Low VCE(sat) Bipolar Transistor

2SC6082

onsemi

50 V, 15 A low collector-to-emitter saturation voltage NPN bipolar transistor for high-speed switching applications such as switching regulators and driver circuits

NPN Bipolar Transistor, Low VCE(sat)TO-220F-3SG

ACZRA4728-HF

Comchip Technology

DIODE ZENER 3.3V 1W DO214AC

Zener DiodeDO-214AC, SMA Flat Leads

AO3402

VBsemi

Mosfets N-channel VDS=30V VGS=±20V ID=5.3A RDS(ON)=33MΩ@4.5V SOT23

N-Channel MOSFET3-SMD, SOT-23-3 Variant

AO4407A

Alpha & Omega Semiconductor

P-Channel MOSFET using advanced trench technology, suitable for load switch or PWM applications, offering excellent R DS(ON) and ultra-low gate charge.

P-Channel MOSFETSOIC-8

AOD403

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 15A/70A TO252

P-Channel MOSFETTO-252-3, DPAK (2 Leads + Tab), SC-63

AOD4184A

AOS

40V N-Channel MOSFET with advanced trench technology, low RDS(ON), suitable for high current load applications.

N-Channel MOSFET

AONR36366

MSKSemi Semiconductors

N-Channel MOSFETDFN 3x3 EP

AONR36366-MS

MSKSemi Semiconductors

DFN3X3-8L N, VDSS30V, ID100A, RDON4MR@VGS10V(MAX), VGS(TH)1.0-2.5V

N-Channel MOSFETDFN 3x3 EP

B220A

Vishay Intertechnology

20V, 2.0A surface mount Schottky barrier rectifier with very low forward voltage drop in an SMA package, AEC-Q101 qualified

Schottky Barrier RectifierSMA

B230A

Vishay Intertechnology

30V, 2.0A surface mount Schottky barrier rectifier with very low forward voltage drop in an SMA package, AEC-Q101 qualified

Schottky Barrier RectifierSMA

B240A

Diodes Incorporated

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 40V V(RRM), Silicon, DO-214AC

Schottky Barrier RectifierSMA

BAT41

STMicroelectronics

Schottky Diode

BAT41K

STMicroelectronics

100 V, 200 mA low capacitance small signal Schottky barrier diode with low leakage and extremely fast switching, in a SOD-523 surface mount package.

Schottky DiodeSOD-523

BAT41KFILM

STMicroelectronics

DIODE SCHOTTKY 100V 200MA SOD523

Schottky DiodeSC-79, SOD-523