AO4407A

Part: AO4407A — Alpha & Omega Semiconductor

Type: P-Channel MOSFET

Description: -30V P-Channel MOSFET with -12A continuous drain current (at VGS = -20V, TA=25°C) and low on-resistance of < 11mΩ (at VGS = -20V).

Operating Conditions:

• Gate-Source Voltage Range: ±25 V
• Operating temperature: -55 to 150 °C
• Drain-Source Breakdown Voltage: -30 V

Absolute Maximum Ratings:

• Max Drain-Source Voltage: -30 V
• Max Gate-Source Voltage: ±25 V
• Max continuous drain current: -12 A (T A =25°C)
• Max junction/storage temperature: 150 °C

Key Specs:

• Drain-Source Breakdown Voltage (BV DSS): -30 V (I D = -250 μ A, V GS = 0V)
• Gate Threshold Voltage (V GS(th)): -1.7 V (Min), -3 V (Max) (V DS = V GS I D = -250 μ A)
• Static Drain-Source On-Resistance (R DS(ON)): 11 mΩ (Max) (V GS = -20V, I D = -12A)
• Zero Gate Voltage Drain Current (I DSS): -1 μ A (Max) (V DS = -30V, V GS = 0V)
• Input Capacitance (C iss): 2600 pF (Max) (V GS =0V, V DS =-15V, f=1MHz)
• Total Gate Charge (Q g): 39 nC (Max) (V GS =-10V, V DS =-15V, I D =-12A)
• Forward Transconductance (g FS): 21 S (Typ) (V DS = -5V, I D = -10A)
• Diode Forward Voltage (V SD): -1 V (Max) (I S = -1A,V GS = 0V)

Features:

• RoHS and Halogen-Free Complaint
• 100% UIS Tested
• 100% Rg Tested
• Advanced trench technology
• 25V gate rating

Applications:

• Load switch
• PWM applications

Package:

• SOIC-8

Symbol	Parameter	Conditions		Min Typ	Max	Units
STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS
BV DSS	Drain-Source Breakdown Voltage	I D = -250 μ A, V GS = 0V		-30		V
I DSS	Zero Gate Voltage Drain Current	V DS = -30V, V GS = 0V			-1	μ A
I DSS	Zero Gate Voltage Drain Current	V DS = -30V, V GS = 0V	T J = 55°C		-5	μ A
I GSS	Gate-Body leakage current	V DS = 0V, V GS = ±25V			±100	nA
V GS(th)	Gate Threshold Voltage	V DS = V GS I D = -250 μ A		-1.7 -2.3	-3	V
I D(ON)	On state drain current	V GS = -10V, V DS = -5V		-60		A
R DS(ON)	Static Drain-Source On-Resistance	V GS = -20V, I D = -12A		8.5	11	m Ω
R DS(ON)	Static Drain-Source On-Resistance	V GS = -20V, I D = -12A	T J =125°C	11.5	15	m Ω
R DS(ON)	Static Drain-Source On-Resistance	V GS = -10V, I D = -12A		10	13	m Ω
R DS(ON)	Static Drain-Source On-Resistance	V GS = -6V, I D = -10A		12.7	17	m Ω
g FS	Forward Transconductance	V DS = -5V, I D = -10A		21		S
V SD	Diode Forward Voltage	I S = -1A,V GS = 0V		-0.7	-1	V
I S	Maximum Body-Diode Continuous Current	Maximum Body-Diode Continuous Current			-3	A
DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS
C iss	Input Capacitance	V GS =0V, V DS =-15V, f=1MHz		2060	2600	pF
C oss	Output Capacitance	V GS =0V, V DS =-15V, f=1MHz		370		pF
C rss	Reverse Transfer Capacitance	V GS =0V, V DS =-15V, f=1MHz		295		pF
R g	Gate resistance	V GS =0V, V DS =0V, f=1MHz		2.4	3.6	Ω
SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS
Q g	Total Gate Charge	V =-10V, V =-15V, I V GS =-10V, V DS =-15V, I D		30	39	nC
Q Q gs	Gate Source Charge Gate Source Charge	V =-10V, V =-15V, I V GS =-10V, V DS =-15V, I D	=-12A =-12A	4.6 4.6		nC nC
Q gd	Gate Drain Charge			10		nC
t D(on)	Turn-On DelayTime	V GS =-10V, V DS =-15V, R L =1.25		11		ns
t r	Turn-On Rise Time	V GS =-10V, V DS =-15V, R L =1.25	Ω ,	9.4		ns
t D(off)	Turn-Off DelayTime	R GEN =3 Ω		24		ns
t f	Turn-Off Fall Time			12		ns
t rr	Body Diode Reverse Recovery Time	I F =-12A, dI/dt=100A/ μ s		30	40	ns
Q rr	Body Diode Reverse Recovery Charge	I F =-12A, dI/dt=100A/ μ s		22		nC

D. The static characteristics in Figures 1 to 6 are obtained using < 300 μ s pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 ° C. The SOA curve provides a single pulse rating.

F. The current rating is based on the t ≤ 10s thermal resistance rating.

G. EAR and I AR ratings are based on low frequency and duty cycles to keep T j=25C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

MPN	Package	Temperature Range	Packing
AO4407A	SOIC-8	null	null