Skip to main content

We use cookies to understand how you use our site and improve your experience. See our Privacy Policy.

BAT46WJ,115

Planar Schottky Barrier Diode

The BAT46WJ,115 is a planar schottky barrier diode from Nexperia USA Inc.. View the full BAT46WJ,115 datasheet below including key specifications, pinout.

BAT46WJ,115 shares its datasheet with BAT46WJ, whose page lists every part number it covers.

Official BAT46WJ,115 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia USA Inc.

Package

SOD323F

Lifecycle

Active

BAT46WJ,115 Key Specifications

ParameterValue
Capacitance @ Vr, F39pF @ 0V, 1MHz
Current - Average Rectified (Io)250mA
Current - Rectified250mA
Reverse Leakage Current9 µA @ 100 V
Diode Configuration1 Independent
Mounting TypeSurface Mount
Non-Repetitive Peak Forward Surge Current2.5A
Operating Temperature - Junction150°C (Max)
Package / CaseSC-90, SOD-323F
PackagingMouseReel
Reverse Leakage Current (Ir)9uA@100V
Reverse Recovery Time5.9 ns
Clock SpeedFast Recovery =< 500ns, > 200mA (Io) Hz
Standard Pack Qty3000
Supplier Device PackageSOD-323F
Diode TechnologySchottky
Reverse Voltage (Max)100 V
Reverse Voltage (Max)100V
Forward Voltage (Max)850 mV @ 250 mA
Voltage - Forward(Vf@If)850mV@250mA

BAT46WJ,115 Overview

Part: BAT46WJ — Nexperia

Type: Planar Schottky barrier diode

Description: Planar Schottky barrier diode with a reverse voltage of up to 100 V, a forward current of 250 mA, and low forward voltage, encapsulated in a SOD323F package.

Operating Conditions:

  • Operating temperature: -55 to 150 °C
  • Reverse voltage: ≤ 100 V

Absolute Maximum Ratings:

  • Max reverse voltage: 100 V
  • Max forward current: 250 mA
  • Max non-repetitive peak forward current: 2.5 A (t_p < 10 ms)
  • Max total power dissipation: 400 mW (T_amb ≤ 25 °C)
  • Max junction temperature: 150 °C
  • Max storage temperature: 150 °C

Key Specs:

  • Forward voltage (V_F): 175 mV (Typ, I_F = 0.1 mA, T_amb = 25 °C)
  • Forward voltage (V_F): 710 mV (Typ, I_F = 250 mA, T_amb = 25 °C)
  • Reverse current (I_R): 1 μA (Typ, V_R = 75 V, T_amb = 25 °C)
  • Reverse current (I_R): 9 μA (Max, V_R = 100 V, T_amb = 25 °C)
  • Diode capacitance (C_d): 39 pF (Max, V_R = 0 V, f = 1 MHz, T_amb = 25 °C)
  • Reverse recovery time (t_rr): 5.9 ns (Typ, I_F = 10 mA, I_R = 10 mA, T_amb = 25 °C)

Features:

  • Low forward voltage
  • Reverse voltage V_R ≤ 100 V
  • Very small and flat lead SMD plastic package
  • Low capacitance

Applications:

  • High-speed switching
  • Line termination
  • Voltage clamping
  • Reverse polarity protection

Package:

  • SOD323F (SC-90) - 2 leads; 1.7 mm x 1.25 mm x 0.7 mm body

BAT46WJ,115 Features

  • Low forward voltage
  • Reverse voltage VR ≤ 100 V
  • Very small and flat lead SMD plastic package
  • Low capacitance

BAT46WJ,115 Applications

  • High-speed switching
  • Line termination
  • Voltage clamping
  • Reverse polarity protection

BAT46WJ,115 Pin Configuration

BAT46WJ,115 Pinout

Package: SC-90 (SOD323F)

Pin NumberPin NameTypeDescription
1K–Cathode (marked with bar)
2A–Anode

Notes

  • This is a 2-pin Schottky barrier diode in a very small surface-mounted package (1.7 mm × 1.25 mm × 0.7 mm).
  • The cathode (K) is identified by a marking bar on the package body.
  • Maximum reverse voltage: 100 V; maximum forward current: 250 mA (DC).
  • Typical forward voltage at 250 mA: 710 mV.

BAT46WJ,115 Thermal Information

SymbolParameterConditionsMinTypMaxUnit
R th(j-a)thermal resistance from junction to ambient infree air[1] [2]--310K/W
[3] [2]--175K/W
R th(j-sp)thermal resistance from junction to solder point[4]--35K/W

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BAT46WJ,115 Package Information

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
BAT46WJNexperiaSOD-323

Other Discrete Semiconductors

  • 2N3904 – onsemi, NPN General - Purpose Amplifier
  • AO3401A – Alpha & Omega Semiconductor, P-Channel MOSFET
  • 1N4148W-13-F – Diodes Incorporated, Surface-Mount Fast Switching Diode
  • 1N4148W-7-F – Diodes Incorporated, Surface-Mount Fast Switching Diode
  • 1N4148WS – onsemi, Fast Switching Diode
  • 1N4148WS-13-F – Diodes Incorporated, Fast Switching Diode
  • 1N4148WS-7-F – Diodes Incorporated, Fast Switching Diode
  • 1N4148WSQ – Diodes Incorporated, Fast Switching Diode

All Discrete Semiconductors datasheetsAll Nexperia USA datasheets (5)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Ask your AI agent about the BAT46WJ,115

Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.

claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp

Then ask: "Can the BAT46WJ,115 run from my 12 V rail? Check it against the datasheet limits."

Create a free account $2 of usage every month, no card needed.