AO3401A

Part: AO3401A

Type: P-Channel MOSFET

Key Specs:

• Drain-Source Voltage (Vds): -30V
• Continuous Drain Current (Id at TA=25°C, Vgs=-10V): -4.0A
• On-Resistance (Rds(on) at Vgs=-10V, Id=-4.0A): < 50mΩ
• On-Resistance (Rds(on) at Vgs=-4.5V, Id=-3.5A): < 60mΩ
• On-Resistance (Rds(on) at Vgs=-2.5V, Id=-2.5A): < 85mΩ
• Gate-Source Voltage (Vgs): ±12V
• Junction and Storage Temperature Range: -55 to 150 °C

Features:

• Advanced trench technology
• Excellent Rds(on)
• Low gate charge
• Operation gate voltages as low as 2.5V

Applications:

• Load switch
• General applications

Package:

• SOT23: No dimensions stated

Symbol	Parameter	Conditions		Min	Typ	Max	Units
STATIC PARAMETERS
BVDSS	Drain-Source Breakdown Voltage	I D =-250μA, V GS =0V		-30			V
I DSS	Zero Gate Voltage Drain Current	V DS =-30V, V GS =0V				-1	μA
						-5
I GSS	Gate-Body leakage current	VDS =0V, VGS = ±12V				±100	nA
VGS(th)	Gate Threshold Voltage	VDS=VGS ID=-250μ A		-0.5	-0.9	-1.3	V
I D(ON)	On state drain current	VGS =-10V, VDS =-5V		-27			Α
	Static Drain-Source On-Resistance	VGS =-10V, ID =-4.0A	V GS =-10V, I D =-4.0A		41	50
			T J =125°C		62	75	mΩ
		VGS =-4.5V, ID =-3.5A			47	60	mΩ
		V GS =-2.5V, I D =-2.5A			60	85	mΩ
g FS	Forward Transconductance	V DS =-5V, I D =-4.0A			17		S
VSD	Diode Forward Voltage	I S =-1A,V GS =0V			-0.7	-1	V
Is	Maximum Body-Diode Continuous Current					-2	Α
DYNAMIC	PARAMETERS		•
C iss	Input Capacitance	V GS =0V, V DS =-15V, f=1MHz			645		pF
C oss	Output Capacitance				80		pF
C rss	Reverse Transfer Capacitance				55		pF
Rg	Gate resistance	V GS =0V, V DS =0V, f=1MHz		4	7.8	12	Ω
SWITCHII	NG PARAMETERS
Q g (10V)	Total Gate Charge	V GS =-10V, V DS =-15V, I D =-4.0A			14		nC
Q g (4.5V)	Total Gate Charge				7		nC
Qgs	Gate Source Charge				1.5		nC
Qgd	Gate Drain Charge				2.5		nC
t D(on)	Turn-On DelayTime	VGS =-10V, VDS =-15V, RL =3.75 Ω , RGEN =3 Ω			6.5		ns
t r	Turn-On Rise Time				3.5		ns
t D(off)	Turn-Off DelayTime				41		ns
t f	Turn-Off Fall Time				9		ns
t rr	Body Diode Reverse Recovery Time	I F =-4.0A, dI/dt=100A/μs			11		ns
Qrr	Body Diode Reverse Recovery Charge	I F =-4.0A, dI/dt=100A/μs			3.5		nC

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

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value in any given application depends on the user's specific board design.

B. The power dissipation P_D is based on T_J(MAX)=150° C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150° C. Ratings are based on low frequency and duty cycles to keep initialT_J=25° C.

D. The R_θ,IA is the sum of the thermal impedence from junction to lead R_θ,II and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T_J(MAX) =150 ^° C. The SOA curve provides a single pulse rating.

-V_DS (Volts) Fig 1: On-Region Characteristics (Note E)

-V_GS(Volts) Figure 2: Transfer Characteristics (Note E)

-I_D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)

Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)

{rm -V_GS} (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)

-V_SD (Volts) Figure 6: Body-Diode Characteristics (Note E)