AO3401A

Part: AO3401A — Alpha & Omega Semiconductor

Type: P-Channel MOSFET

Description: -30V P-Channel MOSFET with -4.0A continuous drain current, RDS(ON) less than 50 mΩ at VGS=-10V, featuring advanced trench technology for low gate charge and operation gate voltages as low as 2.5V.

Operating Conditions:

• Gate-Source voltage: ±2.5V to ±12V (operation gate voltages as low as 2.5V, VGS max ±12V)
• Operating junction temperature: -55 to 150 °C

Absolute Maximum Ratings:

• Max Drain-Source voltage: -30 V
• Max continuous Drain current: -4 A (at T A =25° C)
• Max junction/storage temperature: 150 °C

Key Specs:

• Drain-Source Breakdown Voltage (BV DSS): -30 V (min) at I D =-250 m A, V GS =0V
• Gate Threshold Voltage (V GS(th)): -0.5 V (min), -0.9 V (typ), -1.3 V (max) at V DS =V GS I D =-250 m A
• Static Drain-Source On-Resistance (R DS(ON)): 41 mΩ (typ), 50 mΩ (max) at V GS =-10V, I D =-4.0A
• Static Drain-Source On-Resistance (R DS(ON)): 47 mΩ (typ), 60 mΩ (max) at V GS =-4.5V, I D =-3.5A
• Total Gate Charge (Q g (10V)): 14 nC (typ) at V GS =-10V, V DS =-15V, I D =-4.0A
• Input Capacitance (C iss): 645 pF (typ) at V GS =0V, V DS =-15V, f=1MHz
• Forward Transconductance (g FS): 17 S (typ) at V DS =-5V, I D =-4.0A
• Body Diode Forward Voltage (V SD): -0.7 V (typ), -1 V (max) at I S =-1A,V GS =0V

Features:

• Excellent RDS(ON)
• Low gate charge
• Operation gate voltages as low as 2.5V
• Advanced trench technology

Applications:

• Load switch
• General applications

Package:

Symbol	Parameter	Conditions	Min	Typ	Max	Units
STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS
BV DSS	Drain-Source Breakdown Voltage	I D =-250 m A, V GS =0V	-30			V
I	Zero Gate Voltage Drain Current	V DS =-30V, V GS =0V			-1	m A
DSS		T J	=55° C		-5
I GSS	Gate-Body leakage current	V DS =0V, V GS = ±12V			±100	nA
V GS(th)	Gate Threshold Voltage	V DS =V GS I D =-250 m A	-0.5	-0.9	-1.3	V
I D(ON)	On state drain current	V GS =-10V, V DS =-5V	-27			A
R DS(ON)		V GS =-10V, I D =-4.0A		41	50
		T J	=125° C	62	75	m W
	Static Drain-Source On-Resistance	V GS =-4.5V, I D =-3.5A		47	60	m W
		V GS =-2.5V, I D =-2.5A		60	85	m W
g FS	Forward Transconductance	V DS =-5V, I D =-4.0A		17		S
V SD	Diode Forward Voltage	I S =-1A,V GS =0V		-0.7	-1	V
I S	Maximum Body-Diode Continuous Current	Maximum Body-Diode Continuous Current			-2	A
DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS
C iss	Input Capacitance	V GS =0V, V DS =-15V, f=1MHz		645		pF
C oss	Output Capacitance	V GS =0V, V DS =-15V, f=1MHz		80		pF
C rss	Reverse Transfer Capacitance	V GS =0V, V DS =-15V, f=1MHz		55		pF
R g	Gate resistance	V GS =0V, V DS =0V, f=1MHz	4	7.8	12	W
SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS
Q g (10V)	Total Gate Charge	V GS =-10V, V DS =-15V, I D =-4.0A		14		nC
Q g (4.5V)	Total Gate Charge	V GS =-10V, V DS =-15V, I D =-4.0A		7		nC
Q gs	Gate Source Charge	V GS =-10V, V DS =-15V, I D =-4.0A		1.5		nC
Q gd	Gate Drain Charge			2.5		nC
t D(on)	Turn-On DelayTime	V GS =-10V, V DS =-15V, R L =3.75 W R =3 W		6.5		ns
t r	Turn-On Rise Time	V GS =-10V, V DS =-15V, R L =3.75 W R =3 W	,	3.5		ns
t D(off)	Turn-Off DelayTime	GEN		41		ns
t f	Turn-Off Fall Time	V GS =-10V, V DS =-15V, R L =3.75 W R =3 W		9		ns
t rr	Body Diode Reverse Recovery Time	I F =-4.0A, dI/dt=100A/ m s		11		ns
Q rr	Body Diode Reverse Recovery Charge	I F =-4.0A, dI/dt=100A/ m s		3.5		nC

• B. The power dissipation P D is based on T J(MAX)=150 ° C, using ≤ 10s junction-to-ambient thermal resistance.
• C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150 ° C. Ratings are based on low frequency and duty cycles to keep initialT J=25 ° C.
• D. The R q JA is the sum of the thermal impedence from junction to lead R q JL and lead to ambient.
• E. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max.
• F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150 ° C. The SOA curve provides a single pulse rating.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms\_and\_conditions\_of\_sale

-V DS (Volts) Fig 1: On-Region Characteristics (Note E)

-V DS (Volts) Fig 1: On-Region Characteristics (Note E)

D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)

0 18 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature (Note E)

0 18 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature (Note E)