AONR36366

Part: AONR36366 — AOS Type: N-Channel MOSFET Description: 30V N-Channel MOSFET with <3.5mΩ R_DS(ON) at V_GS=10V and 34A continuous drain current, featuring Trench Power LV MOSFET technology.

Operating Conditions:

• Drain-Source Voltage: 0–30 V
• Gate-Source Voltage: ±20 V
• Operating temperature: -55 to 150 °C

Absolute Maximum Ratings:

• Max Drain-Source Voltage: 30 V
• Max continuous Drain Current: 34 A (at T_C=25°C)
• Max junction/storage temperature: 150 °C

Key Specs:

• Drain-Source Breakdown Voltage (BV_DSS): 30 V (min) at I_D=250mA, V_GS=0V
• Gate Threshold Voltage (V_GS(th)): 1.3 V (min), 1.7 V (typ), 2.1 V (max) at V_DS=V_GS, I_D=250mA
• Static Drain-Source On-Resistance (R_DS(ON)): 2.8 mΩ (typ), 3.5 mΩ (max) at V_GS=10V, I_D=20A
• Static Drain-Source On-Resistance (R_DS(ON)): 4.1 mΩ (typ), 5.2 mΩ (max) at V_GS=4.5V, I_D=20A
• Total Gate Charge (Q_g): 24 nC (typ), 35 nC (max) at V_GS=10V
• Input Capacitance (C_iss): 1835 pF (typ) at V_GS=0V, V_DS=15V, f=1MHz
• Gate resistance (R_g): 1 Ω (min), 2 Ω (typ), 3 Ω (max) at f=1MHz
• Body Diode Reverse Recovery Time (t_rr): 13 ns (typ) at I_F=20A, di/dt=500A/μs

Features:

• Trench Power LV MOSFET technology
• Low R_DS(ON)
• Low Gate Charge
• High Current Capability
• RoHS 2.0 and Halogen-Free Compliant
• 100% UIS Tested
• 100% Rg Tested

Applications:

• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial

Package:

• DFN 3x3 EP

• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
• See Note I

DFN 3x3 EP

Top View Bottom View

• A. The value of R q JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C. The Power dissipation P DSM is based on R q JA t≤ 10s and the maximum allowed junction temperature of 150 ° C. The value in any given application depends on the user's specific board design.
• B. The power dissipation P D is based on T J(MAX)=150 ° C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
• C. Single pulse width limited by junction temperature T J(MAX)=150 ° C.
• D. The R q JA is the sum of the thermal impedance from junction to case R q JC and case to ambient.
• E. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max.
• F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150 ° C. The SOA curve provides a single pulse rating.
• G. The maximum current rating is package limited.
• H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 ° C.
• I. For application requiring slow >1ms turn-on/turn-off, please consult AOS FAE for proper product selection.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

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