BAT54

Part: BAT54 / BAT54A / BAT54C / BAT54S from Diodes Incorporated

Type: Surface-Mount Schottky Barrier Diode

Key Specs:

• Peak Repetitive Reverse Voltage (VRRM): 30 V
• Average Rectified Output Current (IO): 200 mA
• Maximum Forward Voltage (VFmax): 0.8 V (at IF = 100mA)
• Maximum Reverse Leakage Current (IRmax): 2 µA (at VR = 25V)
• Reverse Recovery Time (tRR): 5.0 ns
• Operating and Storage Temperature Range: -65 to +150 °C

Features:

• Low Turn-on Voltage
• Fast Switching
• PN Junction Guard Ring for Transient and ESD Protection
• Totally Lead-Free & Fully RoHS Compliant
• Halogen and Antimony Free. "Green" Device
• Qualified to JEDEC standards (as references in AEC-Q) for High Reliability

Applications:

• null

Package:

• SOT23 (Standard): 0.90mm (Min height) x 2.80mm (Min length) x 2.25mm (Min width), 0.008 grams (Approximate)

• Low Turn-on Voltage
• Fast Switching
• PN Junction Guard Ring for Transient and ESD Protection
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. "Green" Device (Note 3)
• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.

https://www.diodes.com/quality/product-definitions/

An automotive-compliant part is available under separate datasheet (BAT54Q /AQ /CQ /SQ)

Description

200mA surface-mount Schottky Barrier Diode in SOT23 (Standard) package, offers low turn-on voltage and fast switching capability, designed with PN Junction Guard Ring for Transient and ESD Protection, totally lead-free finish and RoHS compliant, "Green" device.

Mechanical Data

• Package: SOT23
• Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead-Free Plating). Solderable per MIL-STD-202, Method 208
• Polarity: See Diagrams Below
• Weight: 0.008 grams (Approximate)

SOT23 (Standard)

Top View BAT54 BAT54A BAT54C BAT54S

Ordering Information (Note 4)

		Packing
Part Number	Package	Qty.
BAT54-7-F	SOT23 (Standard)	3,000
BAT54A-7-F	SOT23 (Standard)	3,000
BAT54C-7-F	SOT23 (Standard)	3,000
BAT54S-7-F	SOT23 (Standard)	3,000
BAT54-13-F	SOT23 (Standard)	10,000
BAT54A-13-F	SOT23 (Standard)	10,000

• Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
  • 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free.
  • 1. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
  • 1. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

xxx = Product Type Marking Code

KL1 = BAT54

KL2 = BAT54A

KL3 = BAT54C

KL4 = BAT54S YM & YM = Date Code Marking

Y or Y = Year (ex: K = 2023)

M = Month (ex: D = December)

Date Code Key

Year	2004	-	2023	2024	2025	2026	2027	2028	2029	2030	2031	2032
Code	R	-	K	L	M	N	P	R	S	T	U	V
Month Code	Jan 1	Feb 2	Mar 3	Apr 4	May 5	Jun 6	Jul 7	Aug 8	Sep 9	Oct O	Nov N	Dec D

Maximum Ratings (@T^A = +25°C, unless otherwise specified.)

Characteristic	Symbol	Value	Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	VRRM VRWM VR	30	V
Average Rectified Output Current (Note 5)	IO	200	mA
Repetitive Peak Forward Current		IFRM	300
Forward Surge Current	@ t < 1.0s	IFSM	600

Thermal Characteristics

Characteristic	Symbol	Value	Unit
Power Dissipation (Note 5)	PD	200	mW
Typical Thermal Resistance Junction to Ambient Air (Note 5)	RθJA	500	°C/W
Typical Thermal Resistance Junction to Case (Note 6)	RθJC	180	°C/W
Operating and Storage Temperature Range (Note 7)	TJ, TSTG	-65 to +150	°C

Electrical Characteristics (@T^A = +25°C, unless otherwise specified.)

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
Reverse Breakdown Voltage (Note 8)	V(BR)R	30	—	—	V	IRS = 100μA
Forward Voltage	VF	— — — — —	— — — — —	240 320 400 500 800	mV	IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA
Reverse Leakage Current (Note 8)	IR	—	—	2.0	μA	VR = 25V
Total Capacitance	CT	—	—	10	pF	VR = 1.0V, f = 1.0MHz
Reverse Recovery Time	tRR	—	—	5.0	ns	IF = 10mA through IR = 10mA to IR = 1.0mA, RL = 100Ω

• Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html.
  • 6. Device mounted on Polymide substrate PC board. FR-4 2oz 1*MRP layout.
  • 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP^D / dT^J < 1 / RθJA.
  • 1. Short duration test pulse used to minimize self-heating effect.

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23 (Standard)

	SOT23 (Standard)
Dim	Min
A	0.90
A1	0.00
A2	0.85
b	0.30
c	0.080
D	2.80
E	2.25
E1	1.20
e	0.89
e1	1.78
F	0.40
L1	0.45
L	0.25
a	0°
All Dimensions in mm

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
Reverse Breakdown Voltage (Note 8)	V(BR)R	30	—	—	V	IRS = 100μA
Forward Voltage	VF	— — — — —	— — — — —	240 320 400 500 800	mV	IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA
Reverse Leakage Current (Note 8)	IR	—	—	2.0	μA	VR = 25V
Total Capacitance	CT	—	—	10	pF	VR = 1.0V, f = 1.0MHz
Reverse Recovery Time	tRR	—	—	5.0	ns	IF = 10mA through IR = 10mA to IR = 1.0mA, RL = 100Ω

• Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html.
  • 6. Device mounted on Polymide substrate PC board. FR-4 2oz 1*MRP layout.
  • 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP^D / dT^J < 1 / RθJA.
  • 1. Short duration test pulse used to minimize self-heating effect.

Characteristic	Symbol	Value	Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	VRRM VRWM VR	30	V
Average Rectified Output Current (Note 5)	IO	200	mA
Repetitive Peak Forward Current		IFRM	300
Forward Surge Current	@ t < 1.0s	IFSM	600

Characteristic	Symbol	Value	Unit
Power Dissipation (Note 5)	PD	200	mW
Typical Thermal Resistance Junction to Ambient Air (Note 5)	RθJA	500	°C/W
Typical Thermal Resistance Junction to Case (Note 6)	RθJC	180	°C/W
Operating and Storage Temperature Range (Note 7)	TJ, TSTG	-65 to +150	°C

Electrical Characteristics (@T^A = +25°C, unless otherwise specified.)

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
Reverse Breakdown Voltage (Note 8)	V(BR)R	30	—	—	V	IRS = 100μA
Forward Voltage	VF	— — — — —	— — — — —	240 320 400 500 800	mV	IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA
Reverse Leakage Current (Note 8)	IR	—	—	2.0	μA	VR = 25V
Total Capacitance	CT	—	—	10	pF	VR = 1.0V, f = 1.0MHz
Reverse Recovery Time	tRR	—	—	5.0	ns	IF = 10mA through IR = 10mA to IR = 1.0mA, RL = 100Ω

• Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html.
  • 6. Device mounted on Polymide substrate PC board. FR-4 2oz 1*MRP layout.
  • 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP^D / dT^J < 1 / RθJA.
  • 1. Short duration test pulse used to minimize self-heating effect.