BAS716

Switching Diode

The BAS716 is a switching diode from Nexperia. View the full BAS716 datasheet below including key specifications.

Official BAS716 datasheet (PDF) — the source this page was extracted from.

Manufacturer

BAS716 Key Specifications

Parameter	Value
Capacitance @ Vr, F	2pF @ 0V, 1MHz
Current - Average Rectified (Io)	200mA
Reverse Leakage Current	5 nA @ 75 V
Mounting Type	Surface Mount
Operating Temperature - Junction	-55°C ~ 150°C
Package / Case	SC-79, SOD-523
Reverse Recovery Time	4 ns
Clock Speed	Small Signal =< 200mA (Io), Any Speed Hz
Supplier Device Package	SOD-523
Diode Technology	Standard
Reverse Voltage (Max)	100 V
Forward Voltage (Max)	1 V @ 10 mA

BAS716 Overview

Part: BAS716 — Nexperia

Type: Switching Diode

Description: 75 V, 200 mA epitaxial medium-speed switching diode featuring low leakage current (typ. 0.2 nA) in an ultra-small SOD523 (SC-79) package.

Operating Conditions:

Ambient temperature: -55 to 150 °C

Absolute Maximum Ratings:

Repetitive peak reverse voltage: 85 V
Continuous reverse voltage: 75 V
Forward current: 200 mA (tp ≤ 300 μs; δ ≤ 0.02; Tj = 25 °C)
Repetitive peak forward current: 500 mA
Non-repetitive peak forward current: 4 A (tp = 1 μs; square wave; Tj(init) = 25 °C)
Total power dissipation: 250 mW (Tamb ≤ 25 °C)
Max junction/storage temperature: 150 °C

Key Specs:

Forward voltage: 0.92 V typ, 1.1 V max (IF = 50 mA; tp ≤ 300 μs; δ ≤ 0.02; Tj = 25 °C)
Forward voltage: 1.02 V typ, 1.25 V max (IF = 150 mA; tp ≤ 300 μs; δ ≤ 0.02; Tj = 25 °C)
Reverse current: 0.2 nA typ, 5 nA max (VR = 75 V; pulsed; Tj = 25 °C)
Reverse current: 3 nA typ, 80 nA max (VR = 75 V; pulsed; Tj = 150 °C)
Reverse recovery time: 0.6 μs typ, 3 μs max (IF = 10 mA, IR = 10 mA, RL = 100 Ω, IR(meas) = 1 mA; Tj = 25 °C)
Diode capacitance: 2 pF typ (VR = 0 V; f = 1 MHz; Tj = 25 °C)
Thermal resistance junction-to-ambient: 450 K/W max (in free air)

Features:

Plastic SMD package
Low leakage current: typ. 0.2 nA
Switching time: typ. 0.6 μs
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA
AEC-Q101 qualified

Applications:

Low leakage current applications in surface mounted circuits

Package:

SOD523 (SC-79, 2 leads, 1.2 mm × 0.8 mm × 0.6 mm body)

BAS716 Features

Plastic SMD package
Low leakage current: typ. 0.2 nA
Switching time: typ. 0.6 us
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.
AEC-Q101 qualified

BAS716 Applications

Low leakage current applications in surface mounted circuits.

BAS716 Thermal Information

Symbol	Parameter	Conditions		Min	Typ	Max	Unit
R th(j-a)	thermal resistance from junction to ambient	In free air	[1]	-	-	450	K/W
R th(j-sp)	thermal resistance from junction to solder point		[2]	-	-	120	K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Soldering point of cathode tab.

BAS716 Package Information

UNIT	A	b p	c	D	E	H E	v
mm	0.65 0.58	0.34 0.26	0.17 0.11	1.25 1.15	0.85 0.75	1.65 1.55	0.1

OUTLINE	REFERENCES	REFERENCES	REFERENCES	EUROPEAN	ISSUE DATE
VERSION	IEC	JEDEC	JEITA	PROJECTION
SOD523			SC-79		02-12-13 06-03-16

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All Diodes datasheets All Nexperia datasheets (54)

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