AOD4184A

Part: AOD4184A — AOS

Type: N-Channel MOSFET

Description: 40V N-Channel MOSFET with 50A continuous drain current (at TC=25°C) and a maximum on-resistance of 7 mΩ (at VGS=10V).

Operating Conditions:

• Supply voltage: 40 V (Drain-Source)
• Operating temperature: -55 to 175 °C

Absolute Maximum Ratings:

• Max supply voltage: 40 V (Drain-Source), ±20 V (Gate-Source)
• Max continuous current: 50 A (TC=25°C)
• Max junction/storage temperature: 175 °C

Key Specs:

• Drain-Source Breakdown Voltage (BVDSS): 40 V (ID=250 μA, VGS=0V)
• Gate Threshold Voltage (VGS(th)): 1.7 V min, 2.1 V typ, 2.6 V max (VDS=VGS, ID=250 μA)
• Static Drain-Source On-Resistance (RDS(ON)): 5.8 mΩ typ, 7 mΩ max (VGS=10V, ID=20A, TJ=25°C)
• Static Drain-Source On-Resistance (RDS(ON)): 7.6 mΩ typ, 9.5 mΩ max (VGS=4.5V, ID=15A, TJ=25°C)
• Zero Gate Voltage Drain Current (IDSS): 1 μA max (VDS=40V, VGS=0V, TJ=25°C)
• Total Gate Charge (Qg(10V)): 27 nC typ, 33 nC max (VGS=10V, VDS=20V, ID=20A)
• Input Capacitance (Ciss): 1500 pF typ, 1800 pF max (VGS=0V, VDS=20V, f=1MHz)
• Diode Forward Voltage (VSD): 0.7 V typ, 1 V max (IS=1A, VGS=0V)

Features:

• Advanced trench MOSFET technology
• Low resistance package
• Extremely low RDS(ON)
• 100% UIS Tested
• 100% Rg Tested

Applications:

• High current load applications

AOD4184A Pinout

Package: TO252 (DPAK)

Pin Number	Pin Name	Type	Description
1	D	Power	Drain
2	G	Input	Gate
3	S	Power	Source

Notes

• TO252 (DPAK) package: 3-pin surface-mount power package with exposed drain pad on bottom.
• Pin 1 (D): Drain — connected to the large exposed pad on the bottom of the package for thermal management.
• Pin 2 (G): Gate — control input for the MOSFET.
• Pin 3 (S): Source — reference terminal.
• The device is a 40V N-channel MOSFET with RDS(ON) < 7 mΩ at VGS=10V, rated for 50A continuous drain current at TC=25°C.

Symbol	Parameter	Conditions		Min	Typ Max		Units
STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS
BV DSS	Drain-Source Breakdown Voltage	I D =250 μ A, V GS =0V		40			V
I	Zero Gate Voltage Drain Current	V DS =40V, V GS =0V				1	μ A
DSS		V DS =40V, V GS =0V	T J =55°C			5	μ A
I GSS	Gate-Body leakage current	V DS =0V, V GS = ±20V				±100	nA
V GS(th)	Gate Threshold Voltage	V DS =V GS I D =250 μ A		1.7	2.1	2.6	V
I D(ON)	On state drain current	V GS =10V, V DS =5V		120			A
R DS(ON)	Static Drain-Source On-Resistance	V GS =10V, I D =20A			5.8	7	m Ω
R DS(ON)	Static Drain-Source On-Resistance	V GS =10V, I D =20A	T J =125°C		9.6	12	m Ω
R DS(ON)		V GS =4.5V, I D =15A			7.6	9.5	m Ω
g FS	Forward Transconductance	V DS =5V, I D =5A			37		S
V SD	Diode Forward Voltage	I S =1A,V GS =0V			0.7	1	V
I S	Maximum Body-Diode Continuous Current	Maximum Body-Diode Continuous Current				20	A
DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS
C iss	Input Capacitance	V GS =0V, V DS =20V, f=1MHz		1200	1500	1800	pF
C oss	Output Capacitance	V GS =0V, V DS =20V, f=1MHz		150	215	280	pF
C rss	Reverse Transfer Capacitance	V GS =0V, V DS =20V, f=1MHz		80	135	190	pF
R g	Gate resistance	V GS =0V, V DS =0V, f=1MHz		2	3.5	5	Ω
SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS
Q g (10V)	Total Gate Charge	V GS =10V, V DS =20V, I D =20A		21	27	33	nC
Q g (4.5V)	Total Gate Charge	V GS =10V, V DS =20V, I D =20A		10	14	17	nC
Q gs	Gate Source Charge	V GS =10V, V DS =20V, I D =20A		3	5	6	nC
Q gd	Gate Drain Charge	V GS =10V, V DS =20V, I D =20A		3	6	9	nC
t D(on)	Turn-On DelayTime	V GS =10V, V DS =20V, R L =1 Ω R GEN =3 Ω			6		ns
t r	Turn-On Rise Time	V GS =10V, V DS =20V, R L =1 Ω R GEN =3 Ω	,		17		ns
t D(off)	Turn-Off DelayTime	V GS =10V, V DS =20V, R L =1 Ω R GEN =3 Ω			30		ns
t f	Turn-Off Fall Time	V GS =10V, V DS =20V, R L =1 Ω R GEN =3 Ω			17		ns
t rr	Body Diode Reverse Recovery Time	I F =20A, dI/dt=100A/ μ s		20	29	38	ns
Q rr	Body Diode Reverse Recovery Charge	I F =20A, dI/dt=100A/ μ s		18	26	34	nC

• B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
• C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.
• D. The R θ JA is the sum of the thermal impedence from junction to case R θ JC and case to ambient.
• E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
• F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

• H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Parameter	Parameter	Symbol	Maximum	Units
Drain-Source Voltage	Drain-Source Voltage	V DS	40	V
Gate-Source Voltage	Gate-Source Voltage	V GS	±20	V
Continuous Drain Current G	T C =25°C	I D	50	A
Continuous Drain Current G	T C =100°C	I D	40	A
Pulsed Drain Current C	Pulsed Drain Current C	I DM	120	A
Continuous Drain Current	T A =25°C	I DSM	13	A
Continuous Drain Current	T A =70°C	I DSM	10	A
Avalanche Current C	Avalanche Current C	I AS , I AR	35	A
Avalanche energy L=0.1mH C	Avalanche energy L=0.1mH C	E AS , E AR	61	mJ
	T C =25°C	P D	50	W
	T C =100°C	P D	25	W
	T A =25°C	P DSM	2.3	W
	T A =70°C	P DSM	1.5	W
Junction and Storage Temperature Range	Junction and Storage Temperature Range	T J , T STG	-55 to 175	°C

Thermal Characteristics	Thermal Characteristics	Thermal Characteristics	Thermal Characteristics	Thermal Characteristics	Thermal Characteristics
Parameter	Parameter	Symbol	Typ	Max	Units
Maximum Junction-to-Ambient A	t ≤ 10s	R θ JA	18	22	°C/W
Maximum Junction-to-Ambient A D	Steady-State	R θ JA	44	55	°C/W
Maximum Junction-to-Case	Steady-State	R θ JC	2.4	3	°C/W

Fig 1: On-Region Characteristics (Note E)

Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)

Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)

Figure 2: Transfer Characteristics (Note E)

MPN	Package	Temperature Range	Packing
AOD4184A	null	null	null