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BAT41KFILM

Schottky Diode

The BAT41KFILM is a schottky diode from STMicroelectronics. View the full BAT41KFILM datasheet below including key specifications.

BAT41KFILM shares its datasheet with BAT41, whose page lists every part number it covers.

Official BAT41KFILM datasheet (PDF) — the source this page was extracted from.

Manufacturer

STMicroelectronics

Category

Diodes

Package

SC-79, SOD-523

Lifecycle

Active

BAT41KFILM Key Specifications

ParameterValue
Capacitance @ Vr, F10pF @ 1V, 1MHz
Current - Average Rectified (Io)200mA
Current - Rectified200mA
Reverse Leakage Current100 nA @ 50 V
Diode Configuration1 Independent
Mounting TypeSurface Mount
Non-Repetitive Peak Forward Surge Current1A
Operating Temperature - Junction150°C (Max)
Package / CaseSC-79, SOD-523
PackagingMouseReel
Reverse Leakage Current (Ir)100nA@50V
Clock SpeedSmall Signal =< 200mA (Io), Any Speed Hz
Standard Pack Qty3000
Supplier Device PackageSOD-523
Diode TechnologySchottky
Reverse Voltage (Max)100 V
Reverse Voltage (Max)100V
Forward Voltage (Max)1 V @ 200 mA
Voltage - Forward(Vf@If)1V@0.2A

BAT41KFILM Overview

Part: BAT41 — STMicroelectronics

Type: Low capacitance small signal Schottky diode

Description: 100 V Schottky barrier diode with 200 mA continuous forward current, 3 pF typical capacitance, and 150 °C max junction temperature, suited for high-speed switching applications.

Operating Conditions:

  • Reverse voltage: 100 V
  • Operating temperature: -65 to +150 °C
  • Max continuous forward current: 200 mA

Absolute Maximum Ratings:

  • Max repetitive peak reverse voltage: 100 V
  • Max continuous forward current: 200 mA
  • Max junction/storage temperature: +150 °C

Key Specs:

  • Repetitive peak reverse voltage (V RRM): 100 V
  • Continuous forward current (I F): 200 mA
  • Surge non repetitive forward current (I FSM): 1 A (t p = 10 ms sinusoidal)
  • Reverse leakage current (I R): 0.1 μA max (T j = 25 °C, V R = 50 V)
  • Forward voltage drop (V F): 450 mV max (T j = 25 °C, I F = 1 mA)
  • Forward voltage drop (V F): 1000 mV max (T j = 25 °C, I F = 200 mA)
  • Diode capacitance (C): 3 pF typ, 10 pF max (V R = 1 V, f = 1 MHz)

Features:

  • Low leakage current losses
  • Negligible switching losses
  • Low forward and reverse recovery times
  • Extremely fast switching
  • Surface mount device
  • Low capacitance diode
  • ECOPACK2 compliant

Applications:

  • General Rectification
  • Reverse polarity protection
  • Voltage clamping
  • High-speed switching

Package:

  • SOD-123 (10 mg)
  • SOD-523 (1.4 mg)

BAT41KFILM Features

  • Low leakage current losses
  • Negligible switching losses
  • Low forward and reverse recovery times
  • Extremely fast switching
  • Surface mount device
  • Low capacitance diode
  • ECOPACK2 compliant

BAT41KFILM Applications

  • General Rectification
  • Reverse polarity protection
  • Voltage clamping
  • High-speed switching

BAT41KFILM Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

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  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)

All Diodes datasheetsAll STMicroelectronics datasheets (808)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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