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BAT46WS

Schottky Diode

The BAT46WS is a schottky diode from Shenzhen Slkormicro Semicon Co., Ltd.. View the full BAT46WS datasheet below including key specifications, absolute maximum ratings.

Official BAT46WS datasheet (PDF) — the source this page was extracted from.

Category

Diodes

Package

SC-90, SOD-323F

BAT46WS Key Specifications

ParameterValue
Capacitance @ Vr, F10pF @ 0V, 1MHz
Current - Average Rectified (Io)150mA
Current - Rectified150mA
Reverse Leakage Current5 µA @ 75 V
Diode Configuration1 Independent
Mounting TypeSurface Mount
Non-Repetitive Peak Forward Surge Current750mA
Operating Junction Temperature Range-40℃~+125℃
Operating Temperature - Junction-55°C ~ 150°C
Package / CaseSC-90, SOD-323F
PackagingMouseReel
Reverse Leakage Current (Ir)2uA@75V
Reverse Recovery Time6 ns
Clock SpeedFast Recovery =< 500ns, > 200mA (Io) Hz
Standard Pack Qty3000
Supplier Device PackageSOD-323F
Diode TechnologySchottky
Reverse Voltage (Max)100V
Reverse Voltage (Max)100 V
Forward Voltage (Max)450 mV @ 10 mA
Voltage - Forward(Vf@If)1V@250mA

BAT46WS Overview

Part: BAT46WS

Type: SMD Small Signal Schottky Diode

Description: 100 V repetitive peak reverse voltage, 150 mA average forward current Schottky diode featuring very high switching speed, low junction capacitance, and low leakage current.

Operating Conditions:

  • Operating temperature: -55 to +150 °C
  • Max repetitive peak reverse voltage: 100 V
  • Max average forward current: 150 mA (DC)

Absolute Maximum Ratings:

  • Max repetitive peak reverse voltage: 100 V
  • Max average forward current: 150 mA (DC)
  • Max repetitive peak forward current: 300 mA
  • Max non repetitive peak forward surge current (t_p ≤ 10 ms): 750 mA
  • Max junction/storage temperature: 150 °C

Key Specs:

  • Forward voltage (I_F = 0.1 mA, T_j = 25°C): < 250 mV
  • Forward voltage (I_F = 10 mA, T_j = 25°C): < 450 mV
  • Forward voltage (I_F = 250 mA, T_j = 25°C): < 1000 mV
  • Leakage current (V_R = 50 V, T_j = 25°C): < 2 μA
  • Leakage current (V_R = 75 V, T_j = 25°C): < 5 μA
  • Max. junction capacitance (V_R = 0 V, f = 1 MHz): 10 pF
  • Reverse recovery time (I_F = 10 mA over I_R = 10 mA to I_R = 1 mA): < 6 ns
  • Power dissipation: 230 mW

Features:

  • Very high switching speed
  • Low junction capacitance
  • Low leakage current
  • Compliant to RoHS, REACH, Conflict Minerals

Applications:

  • Signal processing
  • High-speed switching
  • Polarity protection

Package:

  • SMD
  • Taped and reeled

BAT46WS Features

Very high switching speed Low junction capacitance Low leakage current Compliant to RoHS, REACH, Conflict Minerals 1 )

BAT46WS Applications

Signal processing, High-speed switching, Polarity protection Commercial grade 1 )

BAT46WS Absolute Maximum Ratings

I FAV= 150 mAV RRM = 100 V
V F1< 0.25 VI FSM = 750 mA
T jmax= 150°Ct rr < 6 ns

BAT46WS Typical Application

Signal processing, High-speed switching, Polarity protection Commercial grade 1 )

BAT46WS Package Information

Taped and reeled

Weight approx.

Case material

Solder & assembly conditions

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  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll Shenzhen Slkormicro Semicon datasheets (3)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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