BAT46WS

Schottky Diode

The BAT46WS is a schottky diode from Shenzhen Slkormicro Semicon Co., Ltd.. View the full BAT46WS datasheet below including key specifications, absolute maximum ratings.

Manufacturer

Shenzhen Slkormicro Semicon Co., Ltd.

Key Specifications

Parameter	Value
Capacitance @ Vr, F	10pF @ 0V, 1MHz
Capacitance @ Vr, F	10pF @ 0V, 1MHz
Current - Average Rectified (Io)	150mA
Current - Average Rectified (Io)	150mA
Current - Rectified	150mA
Reverse Leakage Current	5 µA @ 75 V
Diode Configuration	1 Independent
Mounting Type	Surface Mount
Non-Repetitive Peak Forward Surge Current	750mA
Operating Junction Temperature Range	-40℃~+125℃
Operating Temperature - Junction	-55°C ~ 150°C
Operating Temperature - Junction	-55°C ~ 150°C
Package / Case	SC-90, SOD-323F
Packaging	MouseReel
Reverse Leakage Current (Ir)	2uA@75V
Reverse Recovery Time	6 ns
Clock Speed	Fast Recovery =< 500ns, > 200mA (Io) Hz
Standard Pack Qty	3000
Supplier Device Package	SOD-323F
Supplier Device Package	SOD-323F
Diode Technology	Schottky
Reverse Voltage (Max)	100 V
Reverse Voltage (Max)	100V
Forward Voltage (Max)	450 mV @ 10 mA
Voltage - Forward(Vf@If)	1V@250mA

Overview

Part: BAT46WS

Type: SMD Small Signal Schottky Diode

Description: 100 V repetitive peak reverse voltage, 150 mA average forward current Schottky diode featuring very high switching speed, low junction capacitance, and low leakage current.

Operating Conditions:

Operating temperature: -55 to +150 °C
Max repetitive peak reverse voltage: 100 V
Max average forward current: 150 mA (DC)

Absolute Maximum Ratings:

Max repetitive peak reverse voltage: 100 V
Max average forward current: 150 mA (DC)
Max repetitive peak forward current: 300 mA
Max non repetitive peak forward surge current (t_p ≤ 10 ms): 750 mA
Max junction/storage temperature: 150 °C

Key Specs:

Forward voltage (I_F = 0.1 mA, T_j = 25°C): < 250 mV
Forward voltage (I_F = 10 mA, T_j = 25°C): < 450 mV
Forward voltage (I_F = 250 mA, T_j = 25°C): < 1000 mV
Leakage current (V_R = 50 V, T_j = 25°C): < 2 μA
Leakage current (V_R = 75 V, T_j = 25°C): < 5 μA
Max. junction capacitance (V_R = 0 V, f = 1 MHz): 10 pF
Reverse recovery time (I_F = 10 mA over I_R = 10 mA to I_R = 1 mA): < 6 ns
Power dissipation: 230 mW

Features:

Very high switching speed
Low junction capacitance
Low leakage current
Compliant to RoHS, REACH, Conflict Minerals

Applications:

Signal processing
High-speed switching
Polarity protection

Package:

SMD
Taped and reeled

Features

Very high switching speed Low junction capacitance Low leakage current Compliant to RoHS, REACH, Conflict Minerals 1 )

Applications

Signal processing, High-speed switching, Polarity protection Commercial grade 1 )

Absolute Maximum Ratings

I FAV	= 150 mA	V RRM = 100 V
V F1	< 0.25 V	I FSM = 750 mA
T jmax	= 150°C	t rr < 6 ns

Typical Application

Signal processing, High-speed switching, Polarity protection Commercial grade 1 )

Package Information

Taped and reeled

Weight approx.

Case material

Solder & assembly conditions

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