AOD403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
The AOD403 is an electronic component from Alpha & Omega Semiconductor Inc.. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. View the full AOD403 datasheet below including key specifications, electrical characteristics.
Manufacturer
Alpha & Omega Semiconductor Inc.
Category
Discrete SemiconductorsPackage
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle
Not For New Designs
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 15A (Ta), 70A (Tc) |
| Drain-Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 20V |
| FET Type | P-Channel |
| Gate Charge (Qg) | 120 nC @ 10 V |
| Input Capacitance (Ciss) | 5300 pF @ 15 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Power Dissipation (Max) | 2.5W (Ta), 90W (Tc) |
| Rds(on) | 6mOhm @ 20A, 20V Ω |
| Supplier Device Package | TO-252 (DPAK) |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Gate Threshold Voltage | 3.5V @ 250µA |
Overview
Part: AOS P-Channel MOSFET
Type: P-Channel MOSFET
Key Specs:
- Zero Gate Voltage Drain Current (IDSS): Max -1 mA (VDS=-30V, VGS=0V)
- Gate Threshold Voltage (VGS(th)): Typ -2.5 V, Max -3.5 V
- Static Drain-Source On-Resistance (RDS(ON)): Typ 5.1 mW (VGS=-20V, ID=-20A, TO252)
- Maximum Body-Diode Continuous Current (IS): -70 A
- Total Gate Charge (Qg): Typ 51 nC, Max 61 nC
Features:
- null
Applications:
- null
Package:
- TO251A: null
- TO252: null
Electrical Characteristics
| Symbol | Parameter | Conditions | Typ | Max | Units | |
|---|---|---|---|---|---|---|
| Min STATIC PARAMETERS | ||||||
| BVDSS | Drain-Source Breakdown Voltage | ID=-250mA, VGS=0V | V | |||
| IDSS | VDS=-30V, VGS=0V | -1 | ||||
| Zero Gate Voltage Drain Current | TJ=55°C | -5 | mA | |||
| IGSS | Gate-Body leakage current | VDS=0V, VGS= ±25V | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS ID=-250mA | -2.5 | -3.5 | V | |
| ID(ON) | On state drain current | VGS=-10V, VDS=-5V | -200 | A | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-20V, ID=-20A TO252 TJ=125°C VGS=-10V, ID=-20A TO252 | 5.1 7.6 6.2 | 6.2 9.2 8 | mW mW | |
| VGS=-20V, ID=-20A TO251A | 5.6 | 6.7 | mW | |||
| VGS=-10V, ID=-20A TO251A | 6.7 | 8.5 | mW | |||
| gFS | Forward Transconductance | VDS=-5V, ID=-20A | 42 | S | ||
| VSD | Diode Forward Voltage | IS=-1A,VGS=0V | -0.7 | -1 | V | |
| IS | Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS | -70 | A | |||
| Ciss | Input Capacitance | 2310 | 2890 | 3500 | pF | |
| Coss | Output Capacitance | VGS=0V, VDS=-15V, f=1MHz | 410 | 585 | 760 | pF |
| Crss | Reverse Transfer Capacitance | 280 | 470 | 660 | pF | |
| Rg | Gate resistance SWITCHING PARAMETERS | VGS=0V, VDS=0V, f=1MHz | 3.8 | 5.7 | W | |
| Qg | Total Gate Charge | 40 | 51 | 61 | nC | |
| Qgs | Gate Source Charge | VGS=-10V, VDS=-15V, ID=-20A | 10 | 12 | 14 | nC |
| Qgd | Gate Drain Charge | 10 | 16 | 22 | nC | |
| tD(on) | Turn-On DelayTime | 16 | ns | |||
| tr | Turn-On Rise Time | VGS=-10V, VDS=-15V, RL=0.75W, | 12 | ns | ||
| tD(off) | Turn-Off DelayTime | RGEN=3W | 45 | ns | ||
| tf | Turn-Off Fall Time | 22 | ns | |||
| trr | Body Diode Reverse Recovery Time | IF=-20A, dI/dt=100A/ms | 18 | 22 | ns | |
| Qrr | IF=-20A, dI/dt=100A/ms Body Diode Reverse Recovery Charge | 9 | 11 | 13 | nC |
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.
D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.
AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms\_and\_conditions\_of\_sale
Thermal Information
(Note E)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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