AOD403

Part: AOD403/AOI403 — AOS

Type: P-Channel MOSFET

Description: -30V P-Channel MOSFET with -70A continuous drain current and typical on-resistance of 5.1 mΩ at VGS=-20V, suitable for high current load applications.

Operating Conditions:

• Operating temperature: -55 to 175 °C
• Gate-Source Voltage: ±25 V

Absolute Maximum Ratings:

• Max Drain-Source Voltage: -30 V
• Max continuous Drain Current (TC=25°C): -70 A
• Max Junction and Storage Temperature: 175 °C

Key Specs:

• Drain-Source Breakdown Voltage (BV DSS): -30 V (min) at I D=-250 mA, V GS=0V
• Gate Threshold Voltage (V GS(th)): -1.5 V (min), -2.5 V (typ), -3.5 V (max) at V DS=V GS, I D=-250 mA
• Static Drain-Source On-Resistance (R DS(ON)): 5.1 mΩ (typ), 6.2 mΩ (max) at V GS=-20V, I D=-20A (TO252)
• Input Capacitance (C iss): 2890 pF (typ), 3500 pF (max) at V GS=0V, V DS=-15V, f=1MHz
• Total Gate Charge (Q g): 51 nC (typ), 61 nC (max) at V GS=-10V, V DS=-15V, I D=-20A
• Gate resistance (R g): 3.8 Ω (typ), 5.7 Ω (max) at V GS=0V, V DS=0V, f=1MHz
• Body Diode Forward Voltage (V SD): -0.7 V (typ), -1 V (max) at I S=-1A, V GS=0V
• Turn-Off Delay Time (t D(off)): 45 ns (typ) at V GS=-10V, V DS=-15V, R L=0.75 Ω, R GEN=3 Ω

Features:

• Advanced trench technology
• Excellent RDS(ON)
• Low gate charge
• Low gate resistance
• 100% UIS Tested
• 100% Rg Tested

Applications:

• High current load applications

Package:

• DPAK (TO-252)
• IPAK (TO-251A)

Pin	Name	Type	Description
1	G	I	Gate
2	S	P	Source
3	D	P	Drain

Symbol	Parameter	Conditions		Min	Typ Max	Units
STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS
BV DSS	Drain-Source Breakdown Voltage	I D =-250 m A, V GS =0V		-30
I DSS	Zero Gate Voltage Drain Current	V DS =-30V, V GS =0V				-1
		V DS =-30V, V GS =0V	T J =55° C			-5
I GSS	Gate-Body leakage current	V DS =0V, V GS = ±25V				±100
V GS(th)	Gate Threshold Voltage	V DS =V GS I D =-250 m A		-1.5	-2.5	-3.5
I D(ON)	On state drain current	V GS =-10V, V DS =-5V		-200
R DS(ON)	Static Drain-Source On-Resistance	V GS =-20V, I D =-20A			5.1	6.2
	Static Drain-Source On-Resistance	TO252	T J =125° C		7.6	9.2
	Static Drain-Source On-Resistance	V GS =-10V, I D =-20A TO252			6.2	8
		V GS =-20V, I D =-20A TO251A			5.6	6.7
		VGS=-10V, ID=-20A TO251A			6.7	8.5
g FS	Forward Transconductance	V DS =-5V, I D =-20A			42
V SD	Diode Forward Voltage	I S =-1A,V GS =0V			-0.7	-1
I S	Maximum Body-Diode Continuous Current G	Maximum Body-Diode Continuous Current G				-70
DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS
C iss	Input Capacitance	V GS =0V, V DS =-15V, f=1MHz		2310	2890	3500
C oss	Output Capacitance	V GS =0V, V DS =-15V, f=1MHz	410		585	760
C rss	Reverse Transfer Capacitance	V GS =0V, V DS =-15V, f=1MHz	280	470	660
R g	Gate resistance	V GS =0V, V DS =0V, f=1MHz		1.9	3.8	5.7
SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS
Q g	Total Gate Charge	V GS =-10V, V DS =-15V, I D =-20A	40		51	61
Q gs	Gate Source Charge	V GS =-10V, V DS =-15V, I D =-20A	10	12		14
Q gd	Gate Drain Charge	V GS =-10V, V DS =-15V, I D =-20A	10	16		22
t D(on)	Turn-On DelayTime	V GS =-10V, V DS =-15V, R L =0.75 W R GEN =3 W			16
t r	Turn-On Rise Time	V GS =-10V, V DS =-15V, R L =0.75 W R GEN =3 W	,		12
t D(off)	Turn-Off DelayTime	V GS =-10V, V DS =-15V, R L =0.75 W R GEN =3 W			45
t f	Turn-Off Fall Time	V GS =-10V, V DS =-15V, R L =0.75 W R GEN =3 W			22
t rr	Body Diode Reverse Recovery Time	I F =-20A, dI/dt=100A/ m s		14	18	22
Q rr	Body Diode Reverse Recovery Charge	I F =-20A, dI/dt=100A/ m s		9	11	13

• E. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175 ° C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

• H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 ° C.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms\_and\_conditions\_of\_sale

• -70A

• < 6.2m W (< 6.7m W * )

• < 8m W (< 8.5m W * )

• -30V

Parameter	Parameter	Symbol	Maximum	Units
Drain-Source Voltage	Drain-Source Voltage	V DS	-30	V
Gate-Source Voltage	Gate-Source Voltage	V GS	±25	V
Continuous Drain Current G	T C =25° C	I D	-70	A
Continuous Drain Current G	T C =100° C	I D	-55	A
Pulsed Drain Current	C	I DM	-200	A
	T A =25° C	I DSM	-15	A
	T A =70° C	I DSM	-12	A
Avalanche Current C	Avalanche Current C	I AS , I AR	-50	A
Avalanche energy L=0.1mH	C	E AS , E AR	125	mJ
	T C =25° C	P D	90	W
	T C =100° C	P D	45	W
	T A =25° C	P DSM	2.5	W
	T A =70° C	P DSM	1.6	W
Junction and Storage	Temperature	T J , T STG	-55 to 175	° C

Thermal Characteristics Parameter	Thermal Characteristics Parameter	Symbol	Typ	Max	Units
Maximum Junction-to-Ambient A	t ≤ 10s	R q JA	16	20	° C/W
Maximum Junction-to-Ambient A D	Steady-State	R q JA	41	50	° C/W
Maximum Junction-to-Case	Steady-State	R q JC	0.9	1.6	° C/W

-V DS (Volts) Fig 1: On-Region Characteristics (Note E)

-V DS (Volts) Fig 1: On-Region Characteristics (Note E)

D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)

-V GS (Volts) Figure 2: Transfer Characteristics (Note E)

0 18 Temperature ( ° C) Figure 4: On-Resistance vs. Junction Temperature (Note E)