CSD13381F4T
The CSD13381F4T is an electronic component from Texas Instruments. View the full CSD13381F4T datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
Texas Instruments
Category
MOSFETs
Lifecycle
Production (Last Updated: 1 day ago)
Key Specifications
| Parameter | Value |
|---|---|
| Case/Package | QFN |
| Case/Package | QFN |
| Continuous Drain Current (ID) | 2.1 A |
| Continuous Drain Current (ID) | 2.1 A |
| Drain to Source Breakdown Voltage | 12 V |
| Drain to Source Breakdown Voltage | 12 V |
| Drain to Source Resistance | 140 mΩ |
| Drain to Source Resistance | 140 mΩ |
| Drain-Source Voltage (Vdss) | 12 V |
| Element Configuration | Single |
| Element Configuration | Single |
| Fall Time | 3.8 ns |
| Fall Time | 3.8 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Gate to Source Voltage (Vgs) | 8 V |
| Height | 350 µm |
| Height | 350 µm |
| Input Capacitance | 200 pF |
| Input Capacitance | 200 pF |
| Lead Free | Lead Free |
| Lead Free | Lead Free |
| Length | 1.035 mm |
| Length | 1.035 mm |
| Lifecycle Status | Production (Last Updated: 1 day ago) |
| Lifecycle Status | Production (Last Updated: 2 days ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Max Junction Temperature (Tj) | 150 °C |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 500 mW |
| Max Power Dissipation | 500 mW |
| Min Operating Temperature | -55 °C |
| Min Operating Temperature | -55 °C |
| Mount | Surface Mount |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Pins | 3 |
| Packaging | MouseReel |
| Power Dissipation | 500 mW |
| Power Dissipation | 500 mW |
| Rds On Max | 180 mΩ |
| Rds On Max | 180 mΩ |
| REACH SVHC | No |
| REACH SVHC | No |
| Rise Time | 1.5 ns |
| Rise Time | 1.5 ns |
| RoHS | Compliant |
| RoHS | Compliant |
| Schedule B | 8541210040, 8541210040|8541210040|8541210040|8541210040|8541210040, 8541290080 |
| Schedule B | 8541210040, 8541210040|8541210040|8541210040|8541210040|8541210040, 8541290080 |
| Standard Pack Qty | 250 |
| Threshold Voltage | 850 mV |
| Threshold Voltage | 850 mV |
| Turn-Off Delay Time | 11 ns |
| Turn-Off Delay Time | 11 ns |
| Turn-On Delay Time | 3.7 ns |
| Turn-On Delay Time | 3.7 ns |
| Width | 635 µm |
| Width | 635 µm |
Overview
This 140 mΩ, 12 V N-channel FemtoFET ™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
Features
- Low On-Resistance
- Low Qg and Qgd
- Low Threshold Voltage
- Ultra-Small Footprint (0402 Case Size)
- -1.0 mm × 0.6 mm
- Ultra-Low Profile
- -0.35 mm Height
- Integrated ESD Protection Diode
- -Rated >4 kV HBM
- -Rated >2 kV CDM
- Lead and Halogen Free
- RoHS Compliant
Applications
- Optimized for Load Switch Applications
- Optimized for General Purpose Switching Applications
- Single-Cell Battery Applications
- Handheld and Mobile Applications
Electrical Characteristics
(TA = 25°C unless otherwise stated)
| PARAMETER | PARAMETER | TEST CONDITIONS | TYP | MAX | UNIT |
|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS |
| BV DSS | Drain-to-Source Voltage | V GS = 0 V, I DS = 250 μA | V | ||
| I DSS | Drain-to-Source Leakage Current | V GS = 0 V, V DS = 9.6 V | 100 | nA | |
| I GSS | Gate-to-Source Leakage Current | V DS = 0 V, V GS = 8 V | 50 | nA | |
| V GS(th) | Gate-to-Source Threshold Voltage | V DS = V GS , I DS = 250 μA | 0.85 | 1.10 | V |
| R DS(on) | Drain-to-Source On-Resistance | V GS = 1.8 V, I DS =0.5 A | 310 | 400 | mΩ |
| V GS = 2.5 V, I DS =0.5 A | 170 | 225 | mΩ | ||
| V GS = 4.5 V, I DS = 0.5 A | 140 | 180 | mΩ | ||
| g ƒs | Transconductance | V DS = 6 V, I DS = 0.5 A | 3.2 | S | |
| DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS |
| C iss | Input Capacitance | V GS = 0 V, V DS = 6 V, ƒ = 1 MHz | 155 | 200 | pF |
| C oss | Output Capacitance | V GS = 0 V, V DS = 6 V, ƒ = 1 MHz | 47 | 62 | pF |
| C rss | Reverse Transfer Capacitance | V GS = 0 V, V DS = 6 V, ƒ = 1 MHz | 2.5 | 3.3 | pF |
| R G | Series Gate Resistance | 23 | Ω | ||
| Q g | Gate Charge Total (4.5 V) | V DS = 6 V, I DS = 0.5 A | 1060 | 1400 | pC |
| Q gd | Gate Charge Gate-to-Drain | V DS = 6 V, I DS = 0.5 A | 140 | pC | |
| Q gs | Gate Charge Gate-to-Source | V DS = 6 V, I DS = 0.5 A | 230 | pC | |
| Q g(th) | Gate Charge at V th | 155 | pC | ||
| Q oss | Output Charge | V DS = 6 V, V GS = 0 V | 1120 | pC | |
| t d(on) | Turn On Delay Time | V DS = 6 V, V GS = 4.5 V, I DS = 0.5 A, R G = 2 Ω | 3.7 | ns | |
| t r | Rise Time | 1.5 | ns | ||
| t d(off) | Turn Off Delay Time | 11.0 | ns | ||
| t ƒ | Fall Time | 3.8 | ns | ||
| DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS |
| V SD | Diode Forward Voltage | I SD = 0.5 A, V GS = 0 V | 0.73 | 0.9 | V |
| Q rr | Reverse Recovery Charge | V DS = 6 V, I F = 0.5 A, di/dt = 300 A/μs | 1550 | pC | |
| t rr | Reverse Recovery Time | V DS = 6 V, I F = 0.5 A, di/dt = 300 A/μs | 6 | ns |
Absolute Maximum Ratings
| T A = 25°C unless otherwise stated | T A = 25°C unless otherwise stated | VALUE | UNIT |
|---|---|---|---|
| V DS | Drain-to-Source Voltage | 12 | V |
| V GS | Gate-to-Source Voltage | 8 | V |
| I D | Continuous Drain Current, T A = 25°C (1) | 2.1 | A |
| I DM | Pulsed Drain Current, T A = 25°C (2) | 7 | A |
| I G | Continuous Gate Clamp Current | 35 | mA |
| I G | Pulsed Gate Clamp Current (2) | 350 | mA |
| P D | Power Dissipation (1) | 500 | mW |
| ESD | Human Body Model (HBM) | 4 | kV |
| Rating | Charged Device Model (CDM) | 2 | kV |
| T J , T stg | Operating Junction and Storage Temperature Range | -55 to 150 | °C |
| E AS | Avalanche Energy, single pulse I D = 7.4 A, L = 0.1 mH, R G = 25 Ω | 2.7 | mJ |
- (1) Typical RθJA = 90°C/W on 1 inch 2 (6.45 cm 2 ), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
- (2) Pulse duration ≤300 μs, duty cycle ≤2%
Figure 3-2. Top View
Thermal Information
(TA = 25°C unless otherwise stated)
| THERMAL METRIC | THERMAL METRIC | TYPICAL VALUES | UNIT |
|---|---|---|---|
| Junction-to-Ambient Thermal Resistance (1) | 90 | °C/W | |
| Junction-to-Ambient Thermal Resistance (2) | 250 | °C/W |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| CSD13381F4 | Texas Instruments | 3-XFDFN |
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