CSD13381F4T
N-Channel MOSFETThe CSD13381F4T is a n-channel mosfet from Texas Instruments. View the full CSD13381F4T datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
CSD13381F4T shares its datasheet with CSD13381F4, whose page lists every part number it covers.
Official CSD13381F4T datasheet (PDF) — the source this page was extracted from.
Manufacturer
Texas InstrumentsCategory
MOSFETsPackage
PICOSTAR-3 1.0x0.6mm
Lifecycle
Production (Last Updated: 1 day ago)
CSD13381F4T Key Specifications
| Parameter | Value |
|---|---|
| Case/Package | QFN |
| Continuous Drain Current (ID) | 2.1 A |
| Drain to Source Breakdown Voltage | 12 V |
| Drain to Source Resistance | 140 mΩ |
| Drain-Source Voltage (Vdss) | 12 V |
| Element Configuration | Single |
| Fall Time | 3.8 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Height | 350 µm |
| Input Capacitance | 200 pF |
| Lead Free | Lead Free |
| Length | 1.035 mm |
| Lifecycle Status | Production (Last Updated: 2 days ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 500 mW |
| Min Operating Temperature | -55 °C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Packaging | MouseReel |
| Power Dissipation | 500 mW |
| Rds On Max | 180 mΩ |
| REACH SVHC | No |
| Rise Time | 1.5 ns |
| RoHS | Compliant |
| Schedule B | 8541210040, 8541210040|8541210040|8541210040|8541210040|8541210040, 8541290080 |
| Standard Pack Qty | 250 |
| Threshold Voltage | 850 mV |
| Turn-Off Delay Time | 11 ns |
| Turn-On Delay Time | 3.7 ns |
| Width | 635 µm |
CSD13381F4T Overview
Part: CSD13381F4 — Texas Instruments
Type: N-Channel Power MOSFET (FemtoFET)
Description: 12 V, 140 mΩ (typ, VGS = 4.5 V) N-channel FemtoFET MOSFET in a 1.0 mm × 0.6 mm (0402) ultra-low-profile package with integrated ESD protection diode.
Operating Conditions:
- Supply voltage: not applicable (VDS up to 12 V, VGS up to 8 V)
- Operating temperature: -55 to 150 °C
- Gate drive: usable down to 1.8 V (RDS(on) specified at VGS = 1.8, 2.5, 4.5 V)
Absolute Maximum Ratings:
- Drain-to-source voltage VDS: 12 V
- Gate-to-source voltage VGS: 8 V
- Continuous drain current ID (TA = 25 °C): 2.1 A
- Pulsed drain current IDM: 7 A (≤300 μs, duty ≤2%)
- Power dissipation PD: 500 mW
- Operating junction and storage temperature: -55 to 150 °C
Key Specs:
- RDS(on) at IDS = 0.5 A: 310 mΩ typ / 400 mΩ max (VGS = 1.8 V); 170 mΩ typ / 225 mΩ max (2.5 V); 140 mΩ typ / 180 mΩ max (4.5 V)
- Threshold voltage VGS(th): 0.85 V typ, 1.10 V max (VDS = VGS, IDS = 250 μA)
- IDSS: 100 nA max (VGS = 0 V, VDS = 9.6 V); IGSS: 50 nA max (VDS = 0 V, VGS = 8 V)
- Qg: 1060 pC typ, 1400 pC max (VDS = 6 V, IDS = 0.5 A, 4.5 V); Qgd: 140 pC typ
- Ciss 155 pF typ / Coss 47 pF typ / Crss 2.5 pF typ (VDS = 6 V, 1 MHz)
- Switching (VDS = 6 V, VGS = 4.5 V, RG = 2 Ω): td(on) 3.7 ns, tr 1.5 ns, td(off) 11.0 ns, tf 3.8 ns
- Body diode VSD: 0.73 V typ, 0.9 V max (ISD = 0.5 A)
- Thermal resistance RθJA: 90 °C/W (1 in² 2 oz Cu pad) or 250 °C/W (minimum pad)
Features:
- Low on-resistance
- Low Qg and Qgd
- Low threshold voltage
- Ultra-small 0402 footprint (1.0 mm × 0.6 mm)
- Maximum height 0.36 mm
- Integrated ESD protection diode (HBM > 4 kV, CDM > 2 kV)
- Lead and halogen free, RoHS compliant
Applications:
- Load switches
- General purpose switching
- Single-cell battery applications
- Handheld and mobile applications
Package:
- PICOSTAR (YJC), 3-pin, Femto (0402) 1.0 mm × 0.6 mm SMD leadless
- CSD13381F4: 3000 pcs on 7-inch reel; CSD13381F4T: 250 pcs
CSD13381F4T Features
- Low on-resistance
- Low Qg and Qgd
- Low threshold voltage
- Ultra-small footprint (0402 case size)
- -1.0 mm × 0.6 mm
- Ultra-low profile
- -Maximum height: 0.36-mm
- Integrated ESD protection diode
- -Rated > 4-kV HBM
- -Rated > 2-kV CDM
- Lead and halogen free
- RoHS compliant
CSD13381F4T Applications
- Optimized for load switch applications
- Optimized for general purpose switching applications
- Single-cell battery applications
- Handheld and mobile applications
CSD13381F4T Electrical Characteristics
(TA = 25°C unless otherwise stated)
| PARAMETER | PARAMETER | TEST CONDITIONS | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS |
| BV DSS | Drain-to-Source Voltage | V GS = 0 V, I DS = 250 μA | V | |||
| I DSS | Drain-to-Source Leakage Current | V GS = 0 V, V DS = 9.6 V | 100 | nA | ||
| I GSS | Gate-to-Source Leakage Current | V DS = 0 V, V GS = 8 V | 50 | nA | ||
| V GS(th) | Gate-to-Source Threshold Voltage | V DS = V GS , I DS = 250 μA | 0.85 | 1.10 | V | |
| R DS(on) | Drain-to-Source On-Resistance | V GS = 1.8 V, I DS = 0.5 A | 310 | 400 | mΩ | |
| V GS = 2.5 V, I DS = 0.5 A | 170 | 225 | mΩ | |||
| V GS = 4.5 V, I DS = 0.5 A | 140 | 180 | mΩ | |||
| g ƒs | Transconductance | V DS = 6 V, I DS = 0.5 A | 3.2 | S | ||
| DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS |
| C iss | Input Capacitance | V GS = 0 V, V DS = 6 V, ƒ = 1 MHz | 155 | 200 | pF | |
| C oss | Output Capacitance | V GS = 0 V, V DS = 6 V, ƒ = 1 MHz | 47 | 62 | pF | |
| C rss | Reverse Transfer Capacitance | V GS = 0 V, V DS = 6 V, ƒ = 1 MHz | 2.5 | 3.3 | pF | |
| R G | Series Gate Resistance | 23 | Ω | |||
| Q g | Gate Charge Total (4.5 V) | V DS = 6 V, I DS = 0.5 A | 1060 | 1400 | pC | |
| Q gd | Gate Charge Gate-to-Drain | V DS = 6 V, I DS = 0.5 A | 140 | pC | ||
| Q gs | Gate Charge Gate-to-Source | V DS = 6 V, I DS = 0.5 A | 230 | pC | ||
| Q g(th) | Gate Charge at V th | 155 | pC | |||
| Q oss | Output Charge | V DS = 6 V, V GS = 0 V | 1120 | pC | ||
| t d(on) | Turn On Delay Time | V DS = 6 V, V GS = 4.5 V, I DS = 0.5 A, R G = 2 Ω | 3.7 | ns | ||
| t r | Rise Time | 1.5 | ns | |||
| t d(off) | Turn Off Delay Time | 11.0 | ns | |||
| t ƒ | Fall Time | 3.8 | ns | |||
| DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS |
| V SD | Diode Forward Voltage | I SD = 0.5 A, V GS = 0 V | 0.73 | 0.9 | V | |
| Q rr | Reverse Recovery Charge | V DS = 6 V, I F = 0.5 A, di/dt = 300 A/μs | 1550 | pC | ||
| t rr | Reverse Recovery Time | V DS = 6 V, I F = 0.5 A, di/dt = 300 A/μs | 6 | ns |
CSD13381F4T Absolute Maximum Ratings
| T A = 25°C unless otherwise stated | T A = 25°C unless otherwise stated | VALUE | UNIT |
|---|---|---|---|
| V DS | Drain-to-source voltage | 12 | V |
| V GS | Gate-to-source voltage | 8 | V |
| I D | Continuous drain current, T A = 25°C (1) | 2.1 | A |
| I DM | Pulsed drain current, T A = 25°C (2) | 7 | A |
| I G | Continuous gate clamp current | 35 | mA |
| I G | Pulsed gate clamp current (2) | 350 | mA |
| P D | Power dissipation (1) | 500 | mW |
| ESD | Human body model (HBM) | 4 | kV |
| Rating | Charged device model (CDM) | 2 | kV |
| T J , T stg | Operating junction and storage temperature range | -55 to 150 | °C |
| E AS | Avalanche energy, single pulse I D = 7.4 A, L = 0.1 mH, R G = 25 Ω | 2.7 | mJ |
- (1) Typical RθJA = 90°C/W on 1 inch 2 (6.45 cm 2 ), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
- (2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%
CSD13381F4T Thermal Information
(TA = 25°C unless otherwise stated)
| THERMAL METRIC | THERMAL METRIC | TYPICAL VALUES | UNIT |
|---|---|---|---|
| Junction-to-Ambient Thermal Resistance (1) | 90 | °C/W | |
| Junction-to-Ambient Thermal Resistance (2) | 250 | °C/W |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| CSD13381F4 | Texas Instruments | 3-XFDFN |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- STL110N10F7 – STMicroelectronics, N-channel Power MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
All MOSFETs datasheetsAll Texas Instruments datasheets (2,418)
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
Ask your AI agent about the CSD13381F4T
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp
Then ask: "Can the CSD13381F4T run from my 12 V rail? Check it against the datasheet limits."
Create a free account $2 of usage every month, no card needed.