CSD13381F4
The CSD13381F4 is an electronic component from Texas Instruments. View the full CSD13381F4 datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
Manufacturer
Texas Instruments
Category
Discrete Semiconductor Products
Package
3-XFDFN
Lifecycle
Active
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 2.1A (Ta) |
| Drain-Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 1.4 nC @ 4.5 V |
| Input Capacitance (Ciss) | 200 pF @ 6 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 3-XFDFN |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds(on) | 180mOhm @ 500mA, 4.5V Ω |
| Supplier Device Package | 3-PICOSTAR (1x0.60) |
| Supplier Device Package | 3-PICOSTAR (1x0.60) |
| Supplier Device Package | 3-PICOSTAR (1x0.60) |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8V |
| Gate Threshold Voltage | 1.1V @ 250µA |
Overview
This 140 mΩ, 12 V N-channel FemtoFET ™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
Features
- Low On-Resistance
- Low Qg and Qgd
- Low Threshold Voltage
- Ultra-Small Footprint (0402 Case Size)
- -1.0 mm × 0.6 mm
- Ultra-Low Profile
- -0.35 mm Height
- Integrated ESD Protection Diode
- -Rated >4 kV HBM
- -Rated >2 kV CDM
- Lead and Halogen Free
- RoHS Compliant
Applications
- Optimized for Load Switch Applications
- Optimized for General Purpose Switching Applications
- Single-Cell Battery Applications
- Handheld and Mobile Applications
Pin Configuration
CSD13381F4 Pinout — 3-XFDFN (PicoStar) Package
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | G | I | Gate |
| 2 | S | P | Source |
| 3 | D | P | Drain |
Notes
- Package: 3-XFDFN (PicoStar), 1.0 mm × 0.6 mm, 0.35 mm max height
- Pin 1 orientation: Top-right quadrant (Q2) of tape enclosure, closest to sprocket holes
- Device type: 12 V N-channel MOSFET with integrated ESD protection diode (>4 kV HBM, >2 kV CDM)
- RDS(on): 140 mΩ @ VGS = 4.5 V, IDS = 0.5 A
- Pin names extracted from device function (Gate, Source, Drain) and confirmed against package diagram showing 3 pads in standard MOSFET configuration.
Electrical Characteristics
(TA = 25°C unless otherwise stated)
| PARAMETER | PARAMETER | TEST CONDITIONS | TYP | MAX | UNIT |
|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS |
| BV DSS | Drain-to-Source Voltage | V GS = 0 V, I DS = 250 μA | V | ||
| I DSS | Drain-to-Source Leakage Current | V GS = 0 V, V DS = 9.6 V | 100 | nA | |
| I GSS | Gate-to-Source Leakage Current | V DS = 0 V, V GS = 8 V | 50 | nA | |
| V GS(th) | Gate-to-Source Threshold Voltage | V DS = V GS , I DS = 250 μA | 0.85 | 1.10 | V |
| R DS(on) | Drain-to-Source On-Resistance | V GS = 1.8 V, I DS =0.5 A | 310 | 400 | mΩ |
| V GS = 2.5 V, I DS =0.5 A | 170 | 225 | mΩ | ||
| V GS = 4.5 V, I DS = 0.5 A | 140 | 180 | mΩ | ||
| g ƒs | Transconductance | V DS = 6 V, I DS = 0.5 A | 3.2 | S | |
| DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS |
| C iss | Input Capacitance | V GS = 0 V, V DS = 6 V, ƒ = 1 MHz | 155 | 200 | pF |
| C oss | Output Capacitance | V GS = 0 V, V DS = 6 V, ƒ = 1 MHz | 47 | 62 | pF |
| C rss | Reverse Transfer Capacitance | V GS = 0 V, V DS = 6 V, ƒ = 1 MHz | 2.5 | 3.3 | pF |
| R G | Series Gate Resistance | 23 | Ω | ||
| Q g | Gate Charge Total (4.5 V) | V DS = 6 V, I DS = 0.5 A | 1060 | 1400 | pC |
| Q gd | Gate Charge Gate-to-Drain | V DS = 6 V, I DS = 0.5 A | 140 | pC | |
| Q gs | Gate Charge Gate-to-Source | V DS = 6 V, I DS = 0.5 A | 230 | pC | |
| Q g(th) | Gate Charge at V th | 155 | pC | ||
| Q oss | Output Charge | V DS = 6 V, V GS = 0 V | 1120 | pC | |
| t d(on) | Turn On Delay Time | V DS = 6 V, V GS = 4.5 V, I DS = 0.5 A, R G = 2 Ω | 3.7 | ns | |
| t r | Rise Time | 1.5 | ns | ||
| t d(off) | Turn Off Delay Time | 11.0 | ns | ||
| t ƒ | Fall Time | 3.8 | ns | ||
| DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS |
| V SD | Diode Forward Voltage | I SD = 0.5 A, V GS = 0 V | 0.73 | 0.9 | V |
| Q rr | Reverse Recovery Charge | V DS = 6 V, I F = 0.5 A, di/dt = 300 A/μs | 1550 | pC | |
| t rr | Reverse Recovery Time | V DS = 6 V, I F = 0.5 A, di/dt = 300 A/μs | 6 | ns |
Absolute Maximum Ratings
| T A = 25°C unless otherwise stated | T A = 25°C unless otherwise stated | VALUE | UNIT |
|---|---|---|---|
| V DS | Drain-to-Source Voltage | 12 | V |
| V GS | Gate-to-Source Voltage | 8 | V |
| I D | Continuous Drain Current, T A = 25°C (1) | 2.1 | A |
| I DM | Pulsed Drain Current, T A = 25°C (2) | 7 | A |
| I G | Continuous Gate Clamp Current | 35 | mA |
| I G | Pulsed Gate Clamp Current (2) | 350 | mA |
| P D | Power Dissipation (1) | 500 | mW |
| ESD | Human Body Model (HBM) | 4 | kV |
| Rating | Charged Device Model (CDM) | 2 | kV |
| T J , T stg | Operating Junction and Storage Temperature Range | -55 to 150 | °C |
| E AS | Avalanche Energy, single pulse I D = 7.4 A, L = 0.1 mH, R G = 25 Ω | 2.7 | mJ |
- (1) Typical RθJA = 90°C/W on 1 inch 2 (6.45 cm 2 ), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
- (2) Pulse duration ≤300 μs, duty cycle ≤2%
Figure 3-2. Top View
Thermal Information
(TA = 25°C unless otherwise stated)
| THERMAL METRIC | THERMAL METRIC | TYPICAL VALUES | UNIT |
|---|---|---|---|
| Junction-to-Ambient Thermal Resistance (1) | 90 | °C/W | |
| Junction-to-Ambient Thermal Resistance (2) | 250 | °C/W |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| CSD13381F4T | Texas Instruments |
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