CSD13381F4
N-Channel FemtoFET MOSFETThe CSD13381F4 is a n-channel femtofet mosfet from Texas Instruments. View the full CSD13381F4 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official CSD13381F4 datasheet (PDF) — the source this page was extracted from.
Manufacturer
Texas InstrumentsCategory
Discrete SemiconductorsPackage
PICOSTAR-3 1.0x0.6mm
Lifecycle
Active
CSD13381F4 Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 2.1A (Ta) |
| Drain-Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 1.4 nC @ 4.5 V |
| Input Capacitance (Ciss) | 200 pF @ 6 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 3-XFDFN |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds(on) | 180mOhm @ 500mA, 4.5V Ω |
| Supplier Device Package | 3-PICOSTAR (1x0.60) |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8V |
| Gate Threshold Voltage | 1.1V @ 250µA |
CSD13381F4 Overview
Part: CSD13381F4 — Texas Instruments
Type: N-Channel Power MOSFET (FemtoFET)
Description: 12 V, 140 mΩ (typ, VGS = 4.5 V) N-channel FemtoFET MOSFET in a 1.0 mm × 0.6 mm (0402) ultra-low-profile package with integrated ESD protection diode.
Operating Conditions:
- Supply voltage: not applicable (VDS up to 12 V, VGS up to 8 V)
- Operating temperature: -55 to 150 °C
- Gate drive: usable down to 1.8 V (RDS(on) specified at VGS = 1.8, 2.5, 4.5 V)
Absolute Maximum Ratings:
- Drain-to-source voltage VDS: 12 V
- Gate-to-source voltage VGS: 8 V
- Continuous drain current ID (TA = 25 °C): 2.1 A
- Pulsed drain current IDM: 7 A (≤300 μs, duty ≤2%)
- Power dissipation PD: 500 mW
- Operating junction and storage temperature: -55 to 150 °C
Key Specs:
- RDS(on) at IDS = 0.5 A: 310 mΩ typ / 400 mΩ max (VGS = 1.8 V); 170 mΩ typ / 225 mΩ max (2.5 V); 140 mΩ typ / 180 mΩ max (4.5 V)
- Threshold voltage VGS(th): 0.85 V typ, 1.10 V max (VDS = VGS, IDS = 250 μA)
- IDSS: 100 nA max (VGS = 0 V, VDS = 9.6 V); IGSS: 50 nA max (VDS = 0 V, VGS = 8 V)
- Qg: 1060 pC typ, 1400 pC max (VDS = 6 V, IDS = 0.5 A, 4.5 V); Qgd: 140 pC typ
- Ciss 155 pF typ / Coss 47 pF typ / Crss 2.5 pF typ (VDS = 6 V, 1 MHz)
- Switching (VDS = 6 V, VGS = 4.5 V, RG = 2 Ω): td(on) 3.7 ns, tr 1.5 ns, td(off) 11.0 ns, tf 3.8 ns
- Body diode VSD: 0.73 V typ, 0.9 V max (ISD = 0.5 A)
- Thermal resistance RθJA: 90 °C/W (1 in² 2 oz Cu pad) or 250 °C/W (minimum pad)
Features:
- Low on-resistance
- Low Qg and Qgd
- Low threshold voltage
- Ultra-small 0402 footprint (1.0 mm × 0.6 mm)
- Maximum height 0.36 mm
- Integrated ESD protection diode (HBM > 4 kV, CDM > 2 kV)
- Lead and halogen free, RoHS compliant
Applications:
- Load switches
- General purpose switching
- Single-cell battery applications
- Handheld and mobile applications
Package:
- PICOSTAR (YJC), 3-pin, Femto (0402) 1.0 mm × 0.6 mm SMD leadless
- CSD13381F4: 3000 pcs on 7-inch reel; CSD13381F4T: 250 pcs
CSD13381F4 Features
- Low on-resistance
- Low Qg and Qgd
- Low threshold voltage
- Ultra-small footprint (0402 case size)
- -1.0 mm × 0.6 mm
- Ultra-low profile
- -Maximum height: 0.36-mm
- Integrated ESD protection diode
- -Rated > 4-kV HBM
- -Rated > 2-kV CDM
- Lead and halogen free
- RoHS compliant
CSD13381F4 Applications
- Optimized for load switch applications
- Optimized for general purpose switching applications
- Single-cell battery applications
- Handheld and mobile applications
CSD13381F4 Electrical Characteristics
(TA = 25°C unless otherwise stated)
| PARAMETER | PARAMETER | TEST CONDITIONS | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS | STATIC CHARACTERISTICS |
| BV DSS | Drain-to-Source Voltage | V GS = 0 V, I DS = 250 μA | V | |||
| I DSS | Drain-to-Source Leakage Current | V GS = 0 V, V DS = 9.6 V | 100 | nA | ||
| I GSS | Gate-to-Source Leakage Current | V DS = 0 V, V GS = 8 V | 50 | nA | ||
| V GS(th) | Gate-to-Source Threshold Voltage | V DS = V GS , I DS = 250 μA | 0.85 | 1.10 | V | |
| R DS(on) | Drain-to-Source On-Resistance | V GS = 1.8 V, I DS = 0.5 A | 310 | 400 | mΩ | |
| V GS = 2.5 V, I DS = 0.5 A | 170 | 225 | mΩ | |||
| V GS = 4.5 V, I DS = 0.5 A | 140 | 180 | mΩ | |||
| g ƒs | Transconductance | V DS = 6 V, I DS = 0.5 A | 3.2 | S | ||
| DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS |
| C iss | Input Capacitance | V GS = 0 V, V DS = 6 V, ƒ = 1 MHz | 155 | 200 | pF | |
| C oss | Output Capacitance | V GS = 0 V, V DS = 6 V, ƒ = 1 MHz | 47 | 62 | pF | |
| C rss | Reverse Transfer Capacitance | V GS = 0 V, V DS = 6 V, ƒ = 1 MHz | 2.5 | 3.3 | pF | |
| R G | Series Gate Resistance | 23 | Ω | |||
| Q g | Gate Charge Total (4.5 V) | V DS = 6 V, I DS = 0.5 A | 1060 | 1400 | pC | |
| Q gd | Gate Charge Gate-to-Drain | V DS = 6 V, I DS = 0.5 A | 140 | pC | ||
| Q gs | Gate Charge Gate-to-Source | V DS = 6 V, I DS = 0.5 A | 230 | pC | ||
| Q g(th) | Gate Charge at V th | 155 | pC | |||
| Q oss | Output Charge | V DS = 6 V, V GS = 0 V | 1120 | pC | ||
| t d(on) | Turn On Delay Time | V DS = 6 V, V GS = 4.5 V, I DS = 0.5 A, R G = 2 Ω | 3.7 | ns | ||
| t r | Rise Time | 1.5 | ns | |||
| t d(off) | Turn Off Delay Time | 11.0 | ns | |||
| t ƒ | Fall Time | 3.8 | ns | |||
| DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS | DIODE CHARACTERISTICS |
| V SD | Diode Forward Voltage | I SD = 0.5 A, V GS = 0 V | 0.73 | 0.9 | V | |
| Q rr | Reverse Recovery Charge | V DS = 6 V, I F = 0.5 A, di/dt = 300 A/μs | 1550 | pC | ||
| t rr | Reverse Recovery Time | V DS = 6 V, I F = 0.5 A, di/dt = 300 A/μs | 6 | ns |
CSD13381F4 Absolute Maximum Ratings
| T A = 25°C unless otherwise stated | T A = 25°C unless otherwise stated | VALUE | UNIT |
|---|---|---|---|
| V DS | Drain-to-source voltage | 12 | V |
| V GS | Gate-to-source voltage | 8 | V |
| I D | Continuous drain current, T A = 25°C (1) | 2.1 | A |
| I DM | Pulsed drain current, T A = 25°C (2) | 7 | A |
| I G | Continuous gate clamp current | 35 | mA |
| I G | Pulsed gate clamp current (2) | 350 | mA |
| P D | Power dissipation (1) | 500 | mW |
| ESD | Human body model (HBM) | 4 | kV |
| Rating | Charged device model (CDM) | 2 | kV |
| T J , T stg | Operating junction and storage temperature range | -55 to 150 | °C |
| E AS | Avalanche energy, single pulse I D = 7.4 A, L = 0.1 mH, R G = 25 Ω | 2.7 | mJ |
- (1) Typical RθJA = 90°C/W on 1 inch 2 (6.45 cm 2 ), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
- (2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%
CSD13381F4 Thermal Information
(TA = 25°C unless otherwise stated)
| THERMAL METRIC | THERMAL METRIC | TYPICAL VALUES | UNIT |
|---|---|---|---|
| Junction-to-Ambient Thermal Resistance (1) | 90 | °C/W | |
| Junction-to-Ambient Thermal Resistance (2) | 250 | °C/W |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| CSD13381F4T | Texas Instruments | PICOSTAR-3 1.0x0.6mm |
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All Discrete Semiconductors datasheetsAll Texas Instruments datasheets (2,418)
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