FERD40H100S

Field-Effect Rectifier Diode

The FERD40H100S is a field-effect rectifier diode from STMicroelectronics. View the full FERD40H100S datasheet below including key specifications.

Official FERD40H100S datasheet (PDF) — the source this page was extracted from.

Manufacturer

STMicroelectronics

FERD40H100S Key Specifications

Parameter	Value
Available Packages	TO-220AB, TO-220FPAB, D2PAK
Storage Temperature Range	-65 °C to +175 °C
Forward RMS Current (IF(RMS))	60 A
Forward Voltage Drop (VF Typ.)	0.645 V at IF=40 A, Tj=125 °C
Average Forward Current (IF(AV))	40 A
Reverse Leakage Current (IR Max)	190 µA at Tj=25 °C, VR=VRRM
Reverse Leakage Current (IR Typ.)	12 mA at Tj=125 °C, VR=VRRM
Maximum Junction Temperature (Tj Max)	175 °C
Repetitive Peak Reverse Voltage (VRRM)	100 V
Surge Non-Repetitive Forward Current (IFSM)	440 A

FERD40H100S Overview

Part: FERD40H100S — STMicroelectronics

Type: Field-Effect Rectifier Diode

Description: 100 V, 40 A field-effect rectifier diode featuring ultra-low typical forward voltage drop of 0.325 V and high-temperature capability up to 175 °C.

Operating Conditions:

Operating junction temperature: Up to +175 °C

Absolute Maximum Ratings:

Repetitive peak reverse voltage (VRRM): 100 V
Forward rms current (IF(RMS)): 60 A
Average forward current (IF(AV), δ = 0.5 square wave): 40 A
Surge non repetitive forward current (IFSM): 440 A
Storage temperature range (Tstg): -65 to +175 °C
Maximum operating junction temperature (Tj): +175 °C

Key Specs:

Forward voltage drop (VF): 0.38 V typ, 0.43 V max (Tj = 25 °C, IF = 4 A)
Forward voltage drop (VF): 0.325 V typ, 0.375 V max (Tj = 125 °C, IF = 4 A)
Forward voltage drop (VF): 0.465 V typ, 0.525 V max (Tj = 25 °C, IF = 10 A)
Forward voltage drop (VF): 0.455 V typ, 0.51 V max (Tj = 125 °C, IF = 10 A)
Forward voltage drop (VF): 0.6 V typ, 0.675 V max (Tj = 25 °C, IF = 20 A)
Forward voltage drop (VF): 0.55 V typ, 0.6 V max (Tj = 125 °C, IF = 20 A)
Forward voltage drop (VF): 0.645 V typ, 0.705 V max (Tj = 125 °C, IF = 40 A)
Reverse leakage current (IR): 190 μA max (Tj = 25 °C, VR = 100 V)
Reverse leakage current (IR): 12 mA typ, 24 mA max (Tj = 125 °C, VR = 100 V)
Reverse leakage current (IR): 6 mA typ, 12 mA max (Tj = 125 °C, VR = 70 V)

Features:

ST patented rectifier process
Stable leakage current over reverse voltage
Low forward voltage drop
High frequency operation
ECOPACK 2 compliant

Applications:

Adapter
Gaming console power supply
Battery charger
DC / DC converter

Package:

TO-220AB
TO-220FPAB
D²PAK

FERD40H100S Features

ST patented rectifier process
Stable leakage current over reverse voltage
Low forward voltage drop
High frequency operation
ECOPACK ® 2 compliant

FERD40H100S Applications

Adapter
Gaming console power supply
Battery charger
DC / DC converter

FERD40H100S Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK ® is an ST trademark.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
FERD40H100SFP	STMicroelectronics	TO-220AB
FERD40H100SG-TR	STMicroelectronics	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FERD40H100STS	STMicroelectronics	TO-220AB

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1N4148WS-7-F – Diodes Incorporated, Fast Switching Diode
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All Discrete Semiconductors datasheets All STMicroelectronics datasheets (808)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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