FERD40H100STS
Field-Effect Rectifier DiodeThe FERD40H100STS is a field-effect rectifier diode from STMicroelectronics. View the full FERD40H100STS datasheet below including key specifications.
FERD40H100STS shares its datasheet with FERD40H100S, whose page lists every part number it covers.
Official FERD40H100STS datasheet (PDF) — the source this page was extracted from.
FERD40H100STS Key Specifications
| Parameter | Value |
|---|---|
| Weight | 1.38 g |
| Storage Temperature Range | -65 °C to +175 °C |
| Forward RMS Current (IF(RMS)) | 60 A |
| Forward Voltage Drop (VF) Typ | 0.325 V at 4 A, Tj = 125 °C |
| Average Forward Current (IF(AV)) | 40 A |
| Maximum Junction Temperature (Tj) | 175 °C |
| Forward Voltage Drop (VF) Max At 40 A | 0.705 V at Tj = 125 °C |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V |
| Reverse Leakage Current (IR) Max At VRRM | 190 µA at 25 °C; 24 mA at 125 °C |
| Surge Non-Repetitive Forward Current (IFSM) | 440 A |
FERD40H100STS Overview
Part: FERD40H100S — STMicroelectronics
Type: Field-Effect Rectifier Diode
Description: 100 V, 40 A field-effect rectifier diode featuring ultra-low typical forward voltage drop of 0.325 V and high-temperature capability up to 175 °C.
Operating Conditions:
- Operating junction temperature: Up to +175 °C
Absolute Maximum Ratings:
- Repetitive peak reverse voltage (VRRM): 100 V
- Forward rms current (IF(RMS)): 60 A
- Average forward current (IF(AV), δ = 0.5 square wave): 40 A
- Surge non repetitive forward current (IFSM): 440 A
- Storage temperature range (Tstg): -65 to +175 °C
- Maximum operating junction temperature (Tj): +175 °C
Key Specs:
- Forward voltage drop (VF): 0.38 V typ, 0.43 V max (Tj = 25 °C, IF = 4 A)
- Forward voltage drop (VF): 0.325 V typ, 0.375 V max (Tj = 125 °C, IF = 4 A)
- Forward voltage drop (VF): 0.465 V typ, 0.525 V max (Tj = 25 °C, IF = 10 A)
- Forward voltage drop (VF): 0.455 V typ, 0.51 V max (Tj = 125 °C, IF = 10 A)
- Forward voltage drop (VF): 0.6 V typ, 0.675 V max (Tj = 25 °C, IF = 20 A)
- Forward voltage drop (VF): 0.55 V typ, 0.6 V max (Tj = 125 °C, IF = 20 A)
- Forward voltage drop (VF): 0.645 V typ, 0.705 V max (Tj = 125 °C, IF = 40 A)
- Reverse leakage current (IR): 190 μA max (Tj = 25 °C, VR = 100 V)
- Reverse leakage current (IR): 12 mA typ, 24 mA max (Tj = 125 °C, VR = 100 V)
- Reverse leakage current (IR): 6 mA typ, 12 mA max (Tj = 125 °C, VR = 70 V)
Features:
- ST patented rectifier process
- Stable leakage current over reverse voltage
- Low forward voltage drop
- High frequency operation
- ECOPACK 2 compliant
Applications:
- Adapter
- Gaming console power supply
- Battery charger
- DC / DC converter
Package:
- TO-220AB
- TO-220FPAB
- D²PAK
FERD40H100STS Features
- ST patented rectifier process
- Stable leakage current over reverse voltage
- Low forward voltage drop
- High frequency operation
- ECOPACK ® 2 compliant
FERD40H100STS Applications
- Adapter
- Gaming console power supply
- Battery charger
- DC / DC converter
FERD40H100STS Package Information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK ® is an ST trademark.
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| FERD40H100S | STMicroelectronics | — |
| FERD40H100SFP | STMicroelectronics | TO-220AB |
| FERD40H100SG-TR | STMicroelectronics | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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- 1N4148WS – onsemi, Fast Switching Diode
- 1N4148WS-13-F – Diodes Incorporated, Fast Switching Diode
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- 1N4148WSQ – Diodes Incorporated, Fast Switching Diode
All Discrete Semiconductors datasheetsAll STMicroelectronics datasheets (808)
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