ESD5Z5.0T1G

Part: ESD5Z Series (including ESD5Z5.0T1G) — onsemi

Type: ESD Protection Diode

Description: Unidirectional TVS diode in a micro SOD-523 package providing IEC 61000-4-2 Level 4 ESD protection with peak pulse power dissipation up to 240 W (8/20 µs).

Operating Conditions:

• Stand-off reverse working voltage ($V_{RWM}$): 2.5 V to 12 V (5.0 V for ESD5Z5.0T1G)

Absolute Maximum Ratings:

• IEC 61000-4-2 ESD Contact: ±30 kV
• IEC 61000-4-2 ESD Air: ±30 kV
• IEC 61000-4-4 EFT: 40 A
• ESD Voltage Per Human Body Model: 16 kV
• ESD Voltage Per Machine Model: 400 V
• Total Power Dissipation on FR-4 Board ($T_A = 25\ ^\circ\text{C}$): 500 mW
• Junction and Storage Temperature Range: -55 to +150 °C
• Lead Solder Temperature (10 Second Duration): 260 °C

Key Specs:

• Reverse Stand-off Voltage ($V_{RWM}$): 5.0 V max (ESD5Z5.0T1G)
• Breakdown Voltage ($V_{BR}$): 6.2 V min at $I_T = 1.0\text{ mA}$ (ESD5Z5.0T1G)
• Reverse Leakage Current ($I_R$): 0.05 µA max at $V_{RWM} = 5.0\text{ V}$ (ESD5Z5.0T1G)
• Clamping Voltage ($V_C$): 11.6 V typ at $I_{PP} = 5.0\text{ A}$ (ESD5Z5.0T1G)
• Clamping Voltage ($V_C$): 18.6 V max at $I_{PP} = 9.4\text{ A}$ (ESD5Z5.0T1G)
• Maximum Peak Pulse Current ($I_{PP}$, 8/20 µs): 9.4 A max (ESD5Z5.0T1G)
• Peak Power Dissipation ($P_{pk}$, 8/20 µs): 174 W max (ESD5Z5.0T1G)
• Capacitance ($C$): 80 pF typ at $V_R = 0\text{ V}$, $f = 1\text{ MHz}$ (ESD5Z5.0T1G)
• Forward Voltage ($V_F$): 1.1 V max at $I_F = 10\text{ mA}$ (all types)

Features:

• Low clamping voltage
• Peak power dissipation up to 240 W per 8 x 20 µs pulse
• Response time typically < 1 ns
• Low reverse leakage current
• IEC61000-4-2 Level 4 ESD protection and IEC61000-4-4 Level 4 EFT protection
• AEC-Q101 qualified and PPAP capable (SZ prefix devices)
• Moisture Sensitivity Level (MSL) 1 rating

Applications:

• Cellular phones
• Portable devices
• Digital cameras
• Power supplies

Package:

• SOD-523 (Case 502, 1.20 mm × 0.80 mm body outline)

• Low Clamping Voltage

0.047 x 0.032 (1.20 mm x 0.80 mm)

• Small Body Outline Dimensions: ″ ″
• Stand-off Voltage: 2.5 V - 12 V
• Low Body Height: 0.028 ″ (0.7 mm)
• Peak Power up to 240 Watts @ 8 x 20 m s Pulse
• Response Time is Typically < 1 ns
• Low Leakage
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• IEC61000-4-4 Level 4 EFT Protection
• IEC61000-4-2 Level 4 ESD Protection
• SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free and are RoHS Compliant*

(T A = 25 ° C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted, V F = 1.1 V Max. @ I F = 10 mA for all types)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

• Includes SZ-prefix devices where applicable.

†Surge current waveform per Figure 5.

1. VBR is measured with a pulse test current I T at an ambient temperature of 25 ° C.
2. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
3. ESD5Z5.0T1G shown below. Other voltages available upon request.

Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 61000-4-2

Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 61000-4-2

IEC 61000-4-2 Spec.

Figure 3. IEC61000-4-2 Spec

IEC 61000-4-2 Spec.

Figure 4. Diagram of ESD Test Setup

The following is taken from Application Note AND8308/D - Interpretation of Datasheet Parameters for ESD Devices.

See Application Note AND8308/D for further description of survivability specs.

STYLE 2

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