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GSBAT46M

Schottky Diode

The GSBAT46M is a schottky diode from Good-Ark. View the full GSBAT46M datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official GSBAT46M datasheet (PDF) — the source this page was extracted from.

Manufacturer

Good-Ark

Category

Diodes

Package

SC-79, SOD-523

Lifecycle

Active

GSBAT46M Key Specifications

ParameterValue
Capacitance @ Vr, F20pF @ 0V, 1MHz
Current - Average Rectified (Io)150mA
Reverse Leakage Current2 µA @ 75 V
Mounting TypeSurface Mount
Operating Temperature - Junction-55°C ~ 125°C
Package / CaseSC-79, SOD-523
Clock SpeedSmall Signal =< 200mA (Io), Any Speed Hz
Supplier Device PackageSOD-523
Diode TechnologySchottky
Reverse Voltage (Max)100 V
Forward Voltage (Max)450 mV @ 10 mA

GSBAT46M Overview

Part: GSBAT46M

Type: Schottky Diode

Description: 100 V, 150 mA surface-mount Schottky barrier diode with low forward voltage drop in a SOD-523 package.

Operating Conditions:

  • Operating temperature: -55 to +125 °C

Absolute Maximum Ratings:

  • Max continuous current: 150 mA
  • Max junction/storage temperature: -55 to +150 °C

Key Specs:

  • Reverse breakdown voltage (V_BR): Min 100 V (at I_R = 100 μA)
  • Forward voltage (V_F): Max 0.25 V (at I_F = 0.1 mA)
  • Forward voltage (V_F): Max 0.45 V (at I_F = 10 mA)
  • Forward voltage (V_F): Max 1 V (at I_F = 250 mA)
  • Reverse current (I_R): Max 0.3 μA (at V_R = 1.5 V)
  • Reverse current (I_R): Max 0.5 μA (at V_R = 10 V)
  • Reverse current (I_R): Max 1 μA (at V_R = 50 V)
  • Reverse current (I_R): Max 2 μA (at V_R = 75 V)
  • Capacitance (C_T): Typ 20 pF (at V_R = 0 V, f = 1 MHz)
  • Capacitance (C_T): Typ 12 pF (at V_R = 1 V, f = 1 MHz)

Features:

  • Low forward voltage drop
  • SOD-523 Micro SMD package
  • RoHS compliant / Green EMC
  • Matte Tin (Sn) lead finish
  • Cathode band / device marking
  • Surface mount package ideally suited for automatic insertion

Package:

  • SOD-523

GSBAT46M Features

  • Low forward voltage drop
  • SOD-523 Micro SMD package
  • RoHS compliant / Green EMC
  • Matte Tin (Sn) lead finish
  • Cathode band / device marking
  • Surface mount package ideally suited for automatic insertion

GSBAT46M Electrical Characteristics

ParameterSymbolConditionsMinTypMaxUnits
Reverse VoltageV BRI R =100μA100--V
Forward VoltageV FI F =0.1mA--0.25V
Forward VoltageV FI F =10mA--0.45V
Forward VoltageV FI F =250mA--1V
Reverse CurrentI RV R =1.5V--0.3μA
Reverse CurrentI RV R =10V--0.5μA
Reverse CurrentI RV R =50V--1μA
Reverse CurrentI RV R =75V--2μA
CapacitanceC TV R =0V, F=1MHz-20-pF
CapacitanceC TV R =1V, F=1MHz-12-pF

GSBAT46M Absolute Maximum Ratings

ParameterSymbolValueUnit
Peak Repetitive Reverse VoltageV RRM100V
Working Peak Reverse VoltageV RWM100V
Forward Continuous CurrentI FM150mA
Peak Forward Current (t=8.3ms)I FSM750mA
Repetitive Peak Forward CurrentI FRM350mA
Power DissipationP D200mW
Thermal Resistance From Junction to AmbientR θJA500°C/W
Junction TemperatureT J-55 to +125°C
Storage TemperatureT STG-55 to +150°C

GSBAT46M Package Information

SymbolDimensions in MillimetersDimensions in MillimetersDimensions in InchesDimensions in Inches
SymbolMinMaxMinMax
A0.5100.7700.0200.030
A10.5000.7000.0200.028
b0.2500.3500.0100.014
c0.0800.1500.0030.006
D0.7500.8500.0300.033
E1.1001.3000.0430.051
E11.5001.7000.0590.067
E20.200 REF0.200 REF0.008 REF0.008 REF
L0.0100.0700.0000.003
θ7° REF7° REF7° REF7° REF

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  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheets

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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