Semiconductors Datasheets

5,099 Semiconductors datasheets read into specs, pinouts and ratings. Parts from Texas Instruments, STMicroelectronics and Microchip Technology.

Semiconductors datasheets, page 54

5,099 parts · page 54 of 170. Most used first, then by part number.

IPP110N20N3GXKSA1

Infineon Technologies

N-channel OptiMOS 3 Power MOSFET with very low on-resistance, high operating temperature, ideal for high-frequency switching and synchronous rectification.

N-channel MOSFETPG-TO220-3

IPT015N10N5

Infineon Technologies

MOSFETs IFX FET >80 - 100V

N-channel Power MOSFETPG-HSOF-8-1

IR2104S

Infineon Technologies

High voltage, high speed 600V half-bridge driver for N-channel power MOSFETs and IGBTs with internally set deadtime, cross-conduction prevention and shutdown input

Half-Bridge DriverSOIC-8

IR2104SPBF

Infineon Technologies

600V high-voltage, high-speed half-bridge driver for power MOSFETs and IGBTs with bootstrap floating high-side channel, internal deadtime and shutdown input

Half-Bridge DriverSOIC-8

IR2110-2PBF

Infineon Technologies

High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels, bootstrap operation up to 500V.

High and Low Side Gate DriverPDIP-14

IRF3205

International Rectifier

55V, 110A N-channel HEXFET power MOSFET with 8.0mΩ max on-resistance, fast switching, 175°C rating and full avalanche rating

N-Channel HEXFET Power MOSFET

IRF3205L

International Rectifier

55V, 110A N-channel HEXFET power MOSFET with 8.0 mOhm max on-resistance, fast switching and fully avalanche rated; IRF3205L is the through-hole TO-262 version.

N-Channel Power MOSFETTO-262

IRF3205LPBF

International Rectifier

55V, 110A HEXFET N-channel power MOSFET with 8.0 mOhm max on-resistance, 175 C operating temperature, fast switching and full avalanche rating (through-hole TO-262 version)

N-Channel Power MOSFETTO-262

IRF3205SPBF

International Rectifier

Advanced HEXFET Power MOSFET with ultra-low on-resistance, dynamic dv/dt rating, and 175°C operating temperature, suitable for a wide variety of efficient and reliable power applications.

Power MOSFETD2Pak

IRF540N

Infineon Technologies

Power MOSFETTO-220

IRF540NPBF

Infineon Technologies

MOSFET N-CH 100V 33A TO220AB

Power MOSFETTO-220-3

IRF540NT

Infineon Technologies

Power MOSFET

IRFML8244

Infineon Technologies

N-Channel HEXFET Power MOSFET designed for load/system switching applications, featuring low on-resistance.

HEXFET-Power MOSFETSOT-23 (Micro3™)

IRFML9244

Infineon Technologies

30V HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on), intended for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRFP260N

International Rectifier

200V, 50A HEXFET N-channel power MOSFET with 0.04 ohm RDS(on), fast switching and fully avalanche rated in a TO-247AC package

N-Channel Power MOSFET

IRFP260NPBF

International Rectifier

Fifth Generation HEXFET Power MOSFET from International Rectifier with extremely low on-resistance, fast switching speed, and ruggedized design for a wide variety of applications.

Power MOSFETTO-247

IRFP4368

Infineon Technologies

75V, 350A (silicon limited) HEXFET N-channel power MOSFET with 1.46 mΩ typical RDS(on), designed for synchronous rectification, UPS and high-frequency hard-switched circuits

Power MOSFETTO-247AC

IRFP4368PBF

Infineon Technologies

High-efficiency N-channel HEXFET Power MOSFET designed for synchronous rectification, UPS, and high-speed power switching applications.

Power MOSFETTO-247AC

IRFR/FU024N

Infineon Technologies

HEXFET Power MOSFET

IRFR024N

Infineon Technologies

HEXFET Power MOSFETTO-252

IRFR024NPBF

Infineon Technologies

Lead-Free Power MOSFET available in D-Pak (TO-252AA) and I-Pak (TO-251AA) packages.

HEXFET Power MOSFETD-Pak (TO-252AA)

IRFR024NTRPBF

Infineon Technologies

MOSFET N-CH 55V 17A DPAK

HEXFET Power MOSFETTO-252-3, DPAK (2 Leads + Tab), SC-63

IRFU024N

Infineon Technologies

HEXFET Power MOSFET

IRFZ44N

Infineon Technologies

Advanced HEXFET® Power MOSFET with ultra-low on-resistance, fast switching, and rugged design, suitable for a wide variety of applications.

Power MOSFETTO-220AB

IRFZ44NPBF

Infineon Technologies

MOSFET N-CH 55V 49A TO220AB

Power MOSFETTO-220-3

IRLML0030

Infineon Technologies

30V HEXFET N-channel power MOSFET in Micro3 (SOT-23) package with low RDS(on) (<29 mΩ at 4.5V VGS), intended for load/system switch applications

HEXFET-Power MOSFETSOT-23

IRLML0040

Infineon Technologies

30V N-channel logic-level HEXFET power MOSFET in a Micro3 (SOT-23) package for load/system switch applications, with RDS(on) below 29 mOhm at VGS = 4.5V.

HEXFET-Power MOSFETSOT-23

IRLML0060

Infineon Technologies

30V logic-level N-channel HEXFET power MOSFET in SOT-23 with low RDS(on) (max 29 mΩ at 4.5V), intended for load/system switching

HEXFET-Power MOSFET

IRLML0100

Infineon Technologies

30V HEXFET N-channel power MOSFET in Micro3 (SOT-23) package with low RDS(on) (<29 mΩ at 4.5V) for load/system switch applications

HEXFET-Power MOSFET

IRLML2030

Infineon Technologies

30V N-channel HEXFET power MOSFET in Micro3 (SOT-23) package with low RDS(on) (<29 mOhm at 4.5V VGS), intended for load/system switch applications.

HEXFET-Power MOSFETSOT-23