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IR2104S

Half-Bridge Driver

The IR2104S is a half-bridge driver from Infineon Technologies. View the full IR2104S datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Manufacturer

Infineon Technologies

Category

Half-Bridge Driver

Key Specifications

ParameterValue
Channel TypeSynchronous
Current - Peak Output (Source, Sink)210mA, 360mA
DigiKey ProgrammableNot Verified
Driven ConfigurationHalf-Bridge
Gate TypeIGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap)600 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH0.8V, 3V
Mounting TypeThrough Hole
Number of Drivers2
Operating Temperature-40°C ~ 150°C (TJ)
Package / Case8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ)100ns, 50ns
Supplier Device Package8-PDIP
Supply Voltage10V ~ 20V

Overview

Part: IR2104(S) — International Rectifier

Type: Half-Bridge Driver

Description: High voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels, featuring a 10–20V gate drive supply range, fully operational to +600V, and internally set deadtime of 520 ns (typ.).

Operating Conditions:

  • Supply voltage (VCC): 10–20 V
  • High side floating supply offset voltage (VS): -5 to +600 V
  • Ambient temperature: -40 to 125 °C

Absolute Maximum Ratings:

  • Max high side floating absolute voltage (VB): 625 V
  • Max low side and logic fixed supply voltage (VCC): 25 V
  • Max junction temperature (TJ): 150 °C
  • Max storage temperature (TS): -55 to 150 °C

Key Specs:

  • Turn-on propagation delay (ton): 680 ns (typ.) at VS = 0V, CL = 1000 pF
  • Turn-off propagation delay (toff): 150 ns (typ.) at VS = 600V, CL = 1000 pF
  • Deadtime (DT): 520 ns (typ.)
  • Output high short circuit pulsed current (IO+): 130 mA (min) at VO=0V, PW ≤ 10 μs
  • Output low short circuit pulsed current (IO-): 270 mA (min) at VO=15V, PW ≤ 10 μs
  • Quiescent VCC supply current (IQCC): 150 μA (typ.)
  • Logic '1' input voltage (VIH): 3 V (min) at VCC = 10V to 20V
  • Logic '0' input voltage (VIL): 0.8 V (max) at VCC = 10V to 20V

Features:

  • Floating channel designed for bootstrap operation
  • Fully operational to +600V
  • Tolerant to negative transient voltage dV/dt immune
  • Undervoltage lockout
  • Gate drive supply range from 10 to 20V
  • 3.3V, 5V and 15V input logic compatible
  • Internally set deadtime
  • Cross-conduction prevention logic
  • High side output in phase with input
  • Matched propagation delay for both channels
  • Shut down input turns off both channels

Applications:

Package:

  • 8 Lead PDIP
  • 8 Lead SOIC

Features

  • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
  • Undervoltage lockout
  • Gate drive supply range from 10 to 20V
  • 3.3V, 5V and 15V input logic compatible
  • Internally set deadtime
  • Cross-conduction prevention logic
  • High side output in phase with input
  • Matched propagation delay for both channels
  • Shut down input turns off both channels
  • Also available LEAD-FREE

Electrical Characteristics

VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25 ° C unless otherwise specified.

SymbolDefinitionMin.Typ.Max.UnitsTest Conditions
tonTurn-on propagation delay-680820nsV S = 0V
t offTurn-off propagation delay-150220nsV S = 600V
t sdShutdown propagation delay-160220ns
t rTurn-on rise time-100170ns
t fTurn-off fall time-5090ns
DTDeadtime, LS turn-off to HS turn-on & HS turn-on to LS turn-off400520650ns
MTDelay matching, HS & LS turn-on/off--60ns

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

SymbolDefinitionDefinitionMin.Max.Units
V BHigh side floating absolute voltageHigh side floating absolute voltage-0.3625V
V SHigh side floating supply offset voltageHigh side floating supply offset voltageV B - 25V B + 0.3V
V HOHigh side floating output voltageHigh side floating output voltageV S - 0.3V B + 0.3V
V CCLow side and logic fixed supply voltageLow side and logic fixed supply voltage-0.325V
V LOLow side output voltageLow side output voltage-0.3V CC + 0.3V
V INLogic input voltage (IN & SD)Logic input voltage (IN & SD)-0.3V CC + 0.3V
dV s /dtAllowable offset supply voltage transientAllowable offset supply voltage transient-50V/ns
P DPackage power dissipation @TA ≤ +25 ° C(8 lead PDIP)-1.0W
P DPackage power dissipation @TA ≤ +25 ° C(8 lead SOIC)-0.625W
Rth JAThermal resistance, junction to ambient(8 lead PDIP)-125° C/W
Rth JAThermal resistance, junction to ambient(8 lead SOIC)-200° C/W
T JJunction temperatureJunction temperature-150° C
T SStorage temperatureStorage temperature-55150° C
T LLead temperature (soldering, 10 seconds)Lead temperature (soldering, 10 seconds)-300° C

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.

SymbolDefinitionMin.Max.Units
V BHigh side floating supply absolute voltageV S + 10V S + 20V
V SHigh side floating supply offset voltageNote 1600V
V HOHigh side floating output voltageV SV BV
V CCLow side and logic fixed supply voltage1020V
V LOLow side output voltage0V CCV
V INLogic input voltage (IN & SD)0V CCV
T AAmbient temperature-40125° C

Note 1: Logic operational for V S of -5 to +600V. Logic state held for V S of -5V to -V BS . (Please refer to the Design Tip DT97-3 for more details).

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
IR2104Infineon Technologies8-DIP (0.300", 7.62mm)
IR2104PBFInfineon Technologies8-DIP (0.300", 7.62mm)
IR2104SPBFInfineon Technologies
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