IR2104

Part: IR2104 / IR2104S — International Rectifier

Type: Half-Bridge Gate Driver (High-Voltage MOSFET/IGBT Driver)

Description: 600 V max offset, 10–20 V gate drive half-bridge driver with 130 mA / 270 mA source/sink output current, 520 ns typical internal deadtime, and shutdown input.

Operating Conditions:

• Supply voltage (VCC): 10–20 V
• High side floating supply (VB): VS + 10 to VS + 20 V
• High side offset voltage (VS): up to 600 V (logic operational for VS of -5 to +600 V)
• Operating temperature: -40 to 125 °C (ambient)

Absolute Maximum Ratings:

• High side floating absolute voltage (VB): -0.3 to 625 V
• Low side and logic supply voltage (VCC): -0.3 to 25 V
• Logic input voltage (IN, SD): -0.3 to VCC + 0.3 V
• Allowable offset supply voltage transient (dVs/dt): 50 V/ns
• Max junction temperature: 150 °C
• Storage temperature: -55 to 150 °C
• Lead temperature (soldering, 10 s): 300 °C
• Package power dissipation @ TA ≤ 25 °C: 1.0 W (PDIP), 0.625 W (SOIC)

Key Specs:

• Output short circuit pulsed current: IO+ 130 mA min (210 mA typ), IO- 270 mA min (360 mA typ), PW ≤ 10 μs
• Turn-on propagation delay: 680 ns typ, 820 ns max (VS = 0 V, CL = 1000 pF, VBIAS = 15 V, TA = 25 °C)
• Turn-off propagation delay: 150 ns typ, 220 ns max (VS = 600 V)
• Rise/fall time: 100 ns / 50 ns typ (CL = 1000 pF)
• Deadtime: 400 ns min, 520 ns typ, 650 ns max
• Delay matching: 60 ns max
• Quiescent current: IQBS 30 μA typ (55 μA max); IQCC 150 μA typ (270 μA max)
• VCC undervoltage thresholds: 8.9 V typ positive-going, 8.2 V typ negative-going
• Logic thresholds: VIH 3 V min, VIL 0.8 V max (VCC = 10–20 V)
• Offset supply leakage: 50 μA max (VB = VS = 600 V)

Features:

• Floating channel designed for bootstrap operation, fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Undervoltage lockout
• Gate drive supply range 10 to 20 V
• 3.3 V, 5 V and 15 V input logic compatible
• Internally set deadtime
• Cross-conduction prevention logic
• High side output in phase with input
• Matched propagation delay for both channels
• Shutdown input turns off both channels
• Lead-free versions available

Applications:

• Half-bridge driving of N-channel power MOSFETs or IGBTs

Package:

• 8-lead PDIP (IR2104)
• 8-lead SOIC (IR2104S)

• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
• Undervoltage lockout
• Gate drive supply range from 10 to 20V
• 3.3V, 5V and 15V input logic compatible
• Internally set deadtime
• Cross-conduction prevention logic
• High side output in phase with input
• Matched propagation delay for both channels
• Shut down input turns off both channels
• Also available LEAD-FREE

VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25 ° C unless otherwise specified.

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.

Note 1: Logic operational for V S of -5 to +600V. Logic state held for V S of -5V to -V BS . (Please refer to the Design Tip DT97-3 for more details).