Semiconductors Datasheets
5,099 Semiconductors datasheets read into specs, pinouts and ratings. Parts from Texas Instruments, STMicroelectronics and Microchip Technology.
Semiconductors datasheets, page 55
5,099 parts · page 55 of 170. Most used first, then by part number.
IRLML2060
Infineon Technologies
30V N-channel HEXFET power MOSFET with low RDS(on) (<29 mΩ at VGS=4.5V) in an industry-standard SOT-23 package, intended for load/system switch applications
IRLML2244
Infineon Technologies
30V N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on) (<29 mOhm at 4.5V VGS) for load/system switch applications
IRLML2246
Infineon Technologies
30V N-channel HEXFET power MOSFET in SOT-23 with low RDS(on) for load/system switch applications
IRLML2402
Infineon Technologies
30V N-channel HEXFET power MOSFET in Micro3 (SOT-23) with low RDS(on) (<29 mOhm at 4.5V), intended for load/system switch applications
IRLML2502
Infineon Technologies
30V N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on) (<29 mΩ), intended for load/system switching.
IRLML2803
International Rectifier
30V N-channel HEXFET power MOSFET in SOT-23 package with low RDS(on) (<29 mOhm at 4.5V VGS) for load/system switch applications
IRLML2803PBF
International Rectifier
IRLML2803TRPBF
Infineon Technologies
MOSFET N-CH 30V 1.2A SOT23
IRLML5103
Infineon Technologies
30V HEXFET N-channel power MOSFET in Micro3 (SOT-23) package with RDS(on) below 29 mΩ at 4.5V gate drive, intended for load/system switching
IRLML5203
Infineon Technologies
30V N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on) of 29 mΩ max at 4.5V gate drive, intended for load/system switching
IRLML6244
Infineon Technologies
30V N-channel HEXFET power MOSFET in SOT-23 (Micro3) with low RDS(on) (<29 mΩ at 4.5V gate drive), intended for load/system switch applications
IRLML6246
Infineon Technologies
30V N-channel HEXFET power MOSFET with low on-resistance (<29 mΩ at 4.5V gate drive) in a SOT-23 package, intended for load/system switch applications.
IRLML6302
Infineon Technologies
30V logic-level N-channel HEXFET power MOSFET in SOT-23 with 29 mOhm max RDS(on) at 4.5V, for load/system switching
IRLML6344
Infineon Technologies
30V N-Channel HEXFET Power MOSFET for load/system switch applications, featuring low on-resistance.
IRLML6344TRPBF
Infineon Technologies
MOSFET N-CH 30V 5A MICRO3/SOT23
IRLML6346
Infineon Technologies
30V N-channel HEXFET power MOSFET with low on-resistance (<29 mΩ at 4.5V VGS) in a Micro3 (SOT-23) package for load/system switch applications
IRLML6401
Infineon Technologies
30V N-channel HEXFET power MOSFET in SOT-23 with 29 mΩ max RDS(on) at 4.5V VGS, intended for load/system switching.
IRLML6402
Infineon Technologies
30V N-channel HEXFET power MOSFET with low RDS(on) (<29 mΩ at 4.5V) in a SOT-23 package, intended for load/system switch applications
IRLML6402TRPBF
Infineon Technologies
MOSFET P-CH 20V 3.7A SOT23
IRLML9301
Infineon Technologies
30V N-channel HEXFET power MOSFET with low RDS(on) (<29 mΩ at 4.5V) in a Micro3 (SOT-23) package, intended for load/system switch applications.
IRLML9303
Infineon Technologies
30V N-channel logic-level HEXFET power MOSFET in SOT-23 with low RDS(on) (<29 mΩ) for load/system switch applications
IRLR3110Z
International Rectifier / Infineon Technologies
100V, 14mΩ N-channel logic-level HEXFET power MOSFET with 175°C junction rating, fast switching and repetitive avalanche capability for industrial applications
IRLR3110ZPBF
International Rectifier / Infineon Technologies
100V, 14mOhm N-channel logic-level HEXFET power MOSFET with 175C junction temperature, fast switching and repetitive avalanche capability for industrial applications
IRLR3110ZTRPBF
International Rectifier / Infineon Technologies
N-Channel HEXFET Power MOSFET designed for industrial applications, featuring ultra-low on-resistance, 175°C operating temperature, fast switching, and improved repetitive avalanche rating.
IRLU3110ZPBF
International Rectifier / Infineon Technologies
100V, 14mOhm N-channel HEXFET power MOSFET with 63A continuous drain current and 175°C junction operating temperature, designed for industrial applications
IRLZ44N
Infineon Technologies
Logic-Level Gate Drive HEXFET Power MOSFET with advanced process technology, dynamic dv/dt rating, 175°C operating temperature, fast switching, and fully avalanche rated.
IRLZ44NPBF
Infineon Technologies
Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.022 Ohm; Id 47A; TO-220AB; Pd 110W; Vgs +/-16V
IRS2104S
Not explicitly stated in the provided text, but typically International Rectifier (IR) / Infineon for IRS parts.
600 V high-side/low-side power MOSFET and IGBT gate driver with internal deadtime, shutdown input, and undervoltage lockout
IS25LP064
ISSI
IS25LP064-JBLE
ISSI