IRLML6402TRPBF
The IRLML6402TRPBF is an electronic component from Infineon Technologies. View the full IRLML6402TRPBF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle
Last Time Buy
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 3.7A (Ta) |
| Drain-Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| FET Type | P-Channel |
| Gate Charge (Qg) | 12 nC @ 5 V |
| Input Capacitance (Ciss) | 633 pF @ 10 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | MouseReel |
| Power Dissipation (Max) | 1.3W (Ta) |
| Rds(on) | 65mOhm @ 3.7A, 4.5V Ω |
| Standard Pack Qty | 3000 |
| Supplier Device Package | Micro3™/SOT-23 |
| Supplier Device Package | Micro3™/SOT-23 |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Gate Threshold Voltage | 1.2V @ 250µA |
Overview
Part: IRLML6402TRPbF — International Rectifier Type: P-Channel HEXFET Power MOSFET Description: A -20 V, 0.065 Ω P-Channel HEXFET Power MOSFET in a SOT-23 package, designed for extremely low on-resistance and fast switching, suitable for battery and load management applications.
Operating Conditions:
- Drain-to-Source Voltage: -20 V
- Operating temperature: -55 to +150 °C
- Gate-to-Source Voltage: ±12 V
Absolute Maximum Ratings:
- Max supply voltage: -20 V (Drain-to-Source)
- Max continuous current: -3.7 A (at T A = 25°C, V GS @-4.5V)
- Max junction/storage temperature: +150 °C
Key Specs:
- Drain-to-Source Breakdown Voltage: -20 V (V GS = 0V, I D = -250 μ A)
- Static Drain-to-Source On-Resistance: 0.065 Ω (V GS = -4.5V, I D = -3.7A)
- Gate Threshold Voltage: -0.40 V (Min) (V DS = V GS , I D = -250 μ A)
- Forward Transconductance: 6.0 S (Min) (V DS = -10V, I D = -3.7A)
- Total Gate Charge: 12 nC (Max) (I D = -3.7A)
- Input Capacitance: 633 pF (Typ) (V GS = 0V, V DS = -10V, ƒ = 1.0MHz)
- Turn-On Delay Time: 350 ns (Typ) (V DD = -10V, I D = -3.7A, R G = 89 Ω, R D = 2.7 Ω)
- Reverse Recovery Time: 43 ns (Max) (T J = 25°C, I F = -1.0A)
Features:
- Ultra Low On-Resistance
- SOT-23 Footprint
- Low Profile (<1.1mm)
- Fast Switching
- Lead-Free
- RoHS Compliant, Halogen-Free
Applications:
- Battery management
- Load management
- Portable electronics
- PCMCIA cards
Package:
- Micro3 (SOT-23)
Electrical Characteristics
| Parameter | Min. | Typ. | Max. | Units | Conditions | |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-to-Source Breakdown Voltage | -20 | --- | --- | V | V GS = 0V, I D = -250 μ A |
| ∆ V (BR)DSS / ∆ T J | Breakdown Voltage Temp. Coefficient | --- | -0.009 | --- | V/°C | Reference to 25°C, I D = -1mA |
| R DS(on) | Static Drain-to-Source On-Resistance | --- | 0.050 0.065 | 0.050 0.065 | Ω | V GS = -4.5V, I D = -3.7A |
| R DS(on) | Static Drain-to-Source On-Resistance | --- | 0.080 0.135 | 0.080 0.135 | Ω | V GS = -2.5V, I D = -3.1A |
| V GS(th) | Gate Threshold Voltage | -0.40 | -0.55 | -1.2 | V | V DS = V GS , I D = -250 μ A |
| g fs | Forward Transconductance | 6.0 | --- | --- | S | V DS = -10V, I D = -3.7A |
| I DSS | Drain-to-Source Leakage Current | --- | --- | -1.0 | A | V DS = -20V, V GS = 0V |
| I DSS | Drain-to-Source Leakage Current | --- | --- | -25 | A | V DS = -20V, V GS = 0V, T J = 70°C |
| I GSS | Gate-to-Source Forward Leakage | --- | --- | -100 | nA | V GS = -12V |
| I GSS | Gate-to-Source Reverse Leakage | --- | --- | 100 | V GS = 12V | |
| Q g | Total Gate Charge | --- | 8.0 | 12 | nC | I D = -3.7A |
| Q gs | Gate-to-Source Charge | --- | 1.2 | 1.8 | nC | V DS = -10V |
| Q gd | Gate-to-Drain ("Miller") Charge | --- | 2.8 | 4.2 | nC | V GS = -5.0V |
| t d(on) | Turn-On Delay Time | --- | 350 | --- | ns | V DD = -10V |
| t r | Rise Time | --- | 48 | --- | ns | I D = -3.7A |
| t d(off) | Turn-Off Delay Time | --- | 588 | --- | ns | R G = 89 Ω |
| t f | Fall Time | --- | 381 | --- | ns | R D = 2.7 Ω |
| C iss | Input Capacitance | --- | 633 | --- | pF | V GS = 0V |
| C oss | Output Capacitance | --- | 145 | --- | pF | V DS = -10V |
| C rss | Reverse Transfer Capacitance | --- | 110 | --- | pF | ƒ = 1.0MHz |
Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| V DS | Drain- Source Voltage | -20 | V |
| I D @T A = 25°C | Continuous Drain Current, V GS @-4.5V | -3.7 | A |
| I D @T A = 70°C | Continuous Drain Current, V GS @-4.5V | -2.2 | A |
| I DM | Pulsed Drain Current | -22 | A |
| P D @T A = 25°C | Power Dissipation | 1.3 | W |
| P D @T A = 70°C | Power Dissipation | 0.8 | W |
| Linear Derating Factor | 0.01 | W/°C | |
| E AS | Single Pulse Avalanche Energy | 11 | mJ |
| V GS | Gate-to-Source Voltage | ± 12 | V |
| T J, T STG | Junction and Storage Temperature Range | -55 to + 150 | °C |
Thermal Information
| Parameter | Typ. | Max. | Units | |
|---|---|---|---|---|
| R θ JA | Maximum Junction-to-Ambient | 75 | 100 | C/W |
Package Information
Dimensions are shown in millimeters (inches)
A
[.075]
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