IRLML6402TRPBF

P-Channel Power MOSFET

The IRLML6402TRPBF is a p-channel power mosfet from Infineon Technologies. View the full IRLML6402TRPBF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official IRLML6402TRPBF datasheet (PDF) — the source this page was extracted from.

Manufacturer

Infineon Technologies

IRLML6402TRPBF Key Specifications

Parameter	Value
Continuous Drain Current	3.7A (Ta)
Drain-Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
FET Type	P-Channel
Gate Charge (Qg)	12 nC @ 5 V
Input Capacitance (Ciss)	633 pF @ 10 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	MouseReel
Power Dissipation (Max)	1.3W (Ta)
Rds(on)	65mOhm @ 3.7A, 4.5V Ω
Standard Pack Qty	3000
Supplier Device Package	Micro3™/SOT-23
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Gate Threshold Voltage	1.2V @ 250µA

IRLML6402TRPBF Overview

Part: IRLML6402TRPbF — International Rectifier Type: P-Channel HEXFET Power MOSFET Description: A -20 V, 0.065 Ω P-Channel HEXFET Power MOSFET in a SOT-23 package, designed for extremely low on-resistance and fast switching, suitable for battery and load management applications.

Operating Conditions:

Drain-to-Source Voltage: -20 V
Operating temperature: -55 to +150 °C
Gate-to-Source Voltage: ±12 V

Absolute Maximum Ratings:

Max supply voltage: -20 V (Drain-to-Source)
Max continuous current: -3.7 A (at T A = 25°C, V GS @-4.5V)
Max junction/storage temperature: +150 °C

Key Specs:

Drain-to-Source Breakdown Voltage: -20 V (V GS = 0V, I D = -250 μ A)
Static Drain-to-Source On-Resistance: 0.065 Ω (V GS = -4.5V, I D = -3.7A)
Gate Threshold Voltage: -0.40 V (Min) (V DS = V GS , I D = -250 μ A)
Forward Transconductance: 6.0 S (Min) (V DS = -10V, I D = -3.7A)
Total Gate Charge: 12 nC (Max) (I D = -3.7A)
Input Capacitance: 633 pF (Typ) (V GS = 0V, V DS = -10V, ƒ = 1.0MHz)
Turn-On Delay Time: 350 ns (Typ) (V DD = -10V, I D = -3.7A, R G = 89 Ω, R D = 2.7 Ω)
Reverse Recovery Time: 43 ns (Max) (T J = 25°C, I F = -1.0A)

Features:

Ultra Low On-Resistance
SOT-23 Footprint
Low Profile (<1.1mm)
Fast Switching
Lead-Free
RoHS Compliant, Halogen-Free

Applications:

Battery management
Load management
Portable electronics
PCMCIA cards

Package:

Micro3 (SOT-23)

IRLML6402TRPBF Electrical Characteristics

	Parameter	Min.	Typ.	Max.	Units	Conditions
V (BR)DSS	Drain-to-Source Breakdown Voltage	-20	---	---	V	V GS = 0V, I D = -250 μ A
∆ V (BR)DSS / ∆ T J	Breakdown Voltage Temp. Coefficient	---	-0.009	---	V/°C	Reference to 25°C, I D = -1mA
R DS(on)	Static Drain-to-Source On-Resistance	---	0.050 0.065	0.050 0.065	Ω	V GS = -4.5V, I D = -3.7A
R DS(on)	Static Drain-to-Source On-Resistance	---	0.080 0.135	0.080 0.135	Ω	V GS = -2.5V, I D = -3.1A
V GS(th)	Gate Threshold Voltage	-0.40	-0.55	-1.2	V	V DS = V GS , I D = -250 μ A
g fs	Forward Transconductance	6.0	---	---	S	V DS = -10V, I D = -3.7A
I DSS	Drain-to-Source Leakage Current	---	---	-1.0	A	V DS = -20V, V GS = 0V
I DSS	Drain-to-Source Leakage Current	---	---	-25	A	V DS = -20V, V GS = 0V, T J = 70°C
I GSS	Gate-to-Source Forward Leakage	---	---	-100	nA	V GS = -12V
I GSS	Gate-to-Source Reverse Leakage	---	---	100		V GS = 12V
Q g	Total Gate Charge	---	8.0	12	nC	I D = -3.7A
Q gs	Gate-to-Source Charge	---	1.2	1.8	nC	V DS = -10V
Q gd	Gate-to-Drain ("Miller") Charge	---	2.8	4.2	nC	V GS = -5.0V
t d(on)	Turn-On Delay Time	---	350	---	ns	V DD = -10V
t r	Rise Time	---	48	---	ns	I D = -3.7A
t d(off)	Turn-Off Delay Time	---	588	---	ns	R G = 89 Ω
t f	Fall Time	---	381	---	ns	R D = 2.7 Ω
C iss	Input Capacitance	---	633	---	pF	V GS = 0V
C oss	Output Capacitance	---	145	---	pF	V DS = -10V
C rss	Reverse Transfer Capacitance	---	110	---	pF	ƒ = 1.0MHz

IRLML6402TRPBF Absolute Maximum Ratings

	Parameter	Max.	Units
V DS	Drain- Source Voltage	-20	V
I D @T A = 25°C	Continuous Drain Current, V GS @-4.5V	-3.7	A
I D @T A = 70°C	Continuous Drain Current, V GS @-4.5V	-2.2	A
I DM	Pulsed Drain Current	-22	A
P D @T A = 25°C	Power Dissipation	1.3	W
P D @T A = 70°C	Power Dissipation	0.8	W
	Linear Derating Factor	0.01	W/°C
E AS	Single Pulse Avalanche Energy	11	mJ
V GS	Gate-to-Source Voltage	± 12	V
T J, T STG	Junction and Storage Temperature Range	-55 to + 150	°C

IRLML6402TRPBF Thermal Information

	Parameter	Typ.	Max.	Units
R θ JA	Maximum Junction-to-Ambient	75	100	C/W

IRLML6402TRPBF Package Information

Dimensions are shown in millimeters (inches)

[.075]

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