Discrete Semiconductors Datasheets
Explore 130 discrete semiconductors with extracted datasheets, electrical characteristics, pinout diagrams, and specifications.
130 parts — page 3 of 5
HD04
Diodes Incorporated
0.8A Surface-Mount Glass Passivated Bridge Rectifier
HD06
Diodes Incorporated
HSBB6115
Huashuo
IPT015N10N5
Infineon Technologies
MOSFETs IFX FET >80 - 100V
IRFR024NPBF
Infineon Technologies
Lead-Free Power MOSFET available in D-Pak (TO-252AA) and I-Pak (TO-251AA) packages.
IRFR024NTRPBF
Infineon Technologies
MOSFET N-CH 55V 17A DPAK
IRFZ44N
Infineon Technologies
Advanced HEXFET® Power MOSFET with ultra-low on-resistance, fast switching, and rugged design, suitable for a wide variety of applications.
IRLML2803TRPBF
Infineon Technologies
MOSFET N-CH 30V 1.2A SOT23
IRLML6344
Infineon Technologies
30V N-Channel HEXFET Power MOSFET for load/system switch applications, featuring low on-resistance.
IRLZ44NPBF
Infineon
Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.022 Ohm; Id 47A; TO-220AB; Pd 110W; Vgs +/-16V
ISC027N10NM6ATMA1
Infineon Technologies
TRENCH >=100V PG-TDSON-8
KT-0603
SHENZHEN KENTO ELECTRONICCO.,LTD
KT-0603-R
SHENZHEN KENTO ELECTRONICCO.,LTD
A red, high-brightness 0603 SMD light-emitting diode with transparent colloid, suitable for automatic placement and infrared reflow soldering.
KT-0603R
Hubei KENTO Elec
Red 645nm LED Indication - Discrete 2.4V 0603
L293D
STMicroelectronics
LBZX84C3V6LT1G
onsemi
Zener Diodes
MBRS540T3
onsemi
MBRS540T3G
onsemi
Schottky Diodes & Rectifiers 5A 40V
MM1Z15W
Jingdao
Zener Diodes Vz=15V Izt=5mA IR=100nA VF=0.9V SOD123W
MMBT3904
Diotec Semiconductor
Bipolar Transistors - BJT BJT, SOT-23, 40V, 200mA, NPN
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
MRA4007T3G
onsemi
Diode, Rectifier, Standard, Vr 1000V, If 1A, Pkg Sma, Vf 1.04V, Tj +175DEGC, Cs 30A
MURA115T3G
ON Semiconductor
MURA120T3
ON Semiconductor
MURA120T3G
onsemi
DIODE STANDARD 200V 1A SMA
MURA1XX,
ON Semiconductor
NTA4151PT1G
onsemi
MOSFET P-CH 20V 760MA SC75
OPTIMOSTM-6
Infineon Technologies
N-channel power MOSFET with 100V breakdown voltage, very low on-resistance, optimized for high-frequency switching and synchronous rectification.
PDTC114EU
Nexperia
NPN Resistor-Equipped Transistor (RET) with built-in bias resistors (R1=10kΩ, R2=10kΩ) in a SOT323 (SC-70) package, capable of 100 mA output current.
PMEG4010CEJ
Nexperia
Schottky Diodes & Rectifiers