ISC027N10NM6ATMA1

Part: ISC027N10NM6 (Manufacturer not specified)

Type: N-channel Power MOSFET

Key Specs:

• Drain-Source Voltage (VDS): 100 V
• On-State Resistance (RDS(on),max): 2.7 mΩ
• Continuous Drain Current (ID): 192 A
• Output Charge (Qoss): 107 nC
• Total Gate Charge (QG (0V...10V)): 58 nC

Features:

• N-channel, normal level
• Very low on-resistance RDS(on)
• Excellent gate charge x RDS(on) product (FOM)
• Very low reverse recovery charge (Qrr)
• High avalanche energy rating
• 175°C operating temperature
• Optimized for high frequency switching and synchronous rectification
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• MSL-1 classified according to J-STD-020

Applications:

• Industrial Applications

Package:

• PG-TDSON-8 FL: A: 0.90 - 1.20, A1: 0.15 - 0.35, b: 0.26 - 0.54, D: 4.80 - 5.35, D1: 3.70 - 4.40, D2: 0.00 - 0.23, E: 5.70 - 6.10, E1: 5.90 - 6.42, E2: 3.88 - 4

• •-N-channel,normallevel
• •-Verylowon-resistance-RDS(on)
• •-Excellentgatechargex-RDS(on)product-(FOM) (Qrr)
• •-Verylowreverserecoverycharge-
• •-Highavalancheenergyrating
• •-175°Coperatingtemperature
• •-Optimizedforhighfrequencyswitchingandsynchronousrectification
• •-Pb-freeleadplating;-RoHScompliant
• •-Halogen-freeaccordingto-IEC61249-2-21
• •-MSL-1classifiedaccordingto-J-STD-020

Productvalidation

Fullyqualifiedaccordingto-JEDECfor-Industrial-Applications

Table-1-----Key-Performance-Parameters

Parameter	Value	Unit
VDS	100	V
RDS(on),max	2.7	mΩ
ID	192	A
Qoss	107	nC
QG (0V...10V)	58	nC
Qrr (100A/μs)	62	nC

Type / Ordering Code	Package	Marking	Related Links
ISC027N10NM6	PG-TDSON-8 FL	027N10N6	-

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Continuous drain current¹⁾	I_D	-	-	192	A	V_GS=10 V, T_C=25 °C
Continuous drain current¹⁾	I_D	-	-	136	A	V_GS=10 V, T_C=100 °C
Continuous drain current¹⁾	I_D	-	-	124	A	V_GS=8 V, T_C=100 °C
Continuous drain current¹⁾	I_D	-	-	23	A	V_GS=10 V, T_A=25°C, R_thJA=50°C/W²⁾
Pulsed drain current³⁾	I_D,pulse	-	-	768	A	T_C=25 °C
Avalanche current, single pulse⁴⁾	I_AS	-	-	50	A	T_C=25 °C
Avalanche energy, single pulse	E_AS	-	-	1057	mJ	I_D=19 A, R_GS=25 Ω
Gate source voltage	V_GS	-20	-	20	V	-
Power dissipation	P_tot	-	-	217	W	T_C=25 °C
Power dissipation	P_tot	-	-	3.0	W	T_A=25 °C, R_thJA=50 °C/W²⁾
Operating and storage temperature	T_j, T_stg	-55	-	175	°C	-

1-----Maximumratings

at-TA=25-°C,unlessotherwisespecified

Table-2-----Maximumratings

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Thermal resistance, junction - case, bottom	RthJC	-	0.34	0.69	°C/W	-
Thermal resistance, junction - case, top	RthJC	-	-	20	°C/W	-
Thermal resistance, junction - ambient, 6 cm² cooling area	RthJA	-	-	50	°C/W	-

2-----Thermalcharacteristics

Table-3-----Thermalcharacteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Drain-source breakdown voltage	V(BR)DSS	100	-	-	V	VGS=0 V, ID=1 mA
Gate threshold voltage	VGS(th)	2.3	2.8	3.3	V	VDS=VGS, ID=116 μA
Zero gate voltage drain current	IDSS	-	0.1	1.0	μA	VDS=80 V, VGS=0 V, TJ=25 °C
Zero gate voltage drain current	IDSS	-	10	100	μA	VDS=80 V, VGS=0 V, TJ=125 °C1)
Gate-source leakage current	IGSS	-	10	100	nA	VGS=20 V, VDS=0 V
Drain-source on-state resistance	RDS(on)	-	2.3	2.7	mΩ	VGS=10 V, ID=50 A
Drain-source on-state resistance	RDS(on)	-	2.8	3.2	mΩ	VGS=8 V, ID=25 A
Gate resistance	RG	0.6	1.2	1.8	Ω	-
Transconductance	gfs	42.5	85	-	S

1. See Diagram 13 for more detailed information

¹⁾ Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions.

²⁾ Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.

³⁾ See Diagram 3 for more detailed information

3-----Electricalcharacteristics

at-Tj=25-°C,unlessotherwisespecified

Table-4-----Staticcharacteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Input capacitance	Ciss	-	4300	5500	pF	VGS=0 V, VDS=50 V, f=1 MHz
Output capacitance^1)	Coss	-	960	1200	pF	VGS=0 V, VDS=50 V, f=1 MHz
Reverse transfer capacitance^1)	Crss	-	16	24	pF	VGS=0 V, VDS=50 V, f=1 MHz
Turn-on delay time	td(on)	-	11	-	ns	VDD=50 V, VGS=10 V, ID=25 A, RG,ext=1.6 Ω
Rise time	tr	-	4.5	-	ns	VDD=50 V, VGS=10 V, ID=25 A, RG,ext=1.6 Ω
Turn-off delay time	td(off)	-	24	-	ns	VDD=50 V, VGS=10 V, ID=25 A, RG,ext=1.6 Ω
Fall time	tf	-	5.5	-	ns	VDD=50 V, VGS=10 V, ID=25 A, RG,ext=1.6 Ω

Table-5-----Dynamiccharacteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Gate to source charge¹)	Qgs	-	19	25	nC	VDD=50 V, ID=25 A, VGS=0 to 10 V
Gate charge at threshold¹)	Qg(th)	-	12	15	nC	VDD=50 V, ID=25 A, VGS=0 to 10 V
Gate to drain charge¹)	Qgd	-	9.6	14.4	nC	VDD=50 V, ID=25 A, VGS=0 to 10 V
Switching charge	Qsw	-	16.9	-	nC	VDD=50 V, ID=25 A, VGS=0 to 10 V
Gate charge total¹)	Qg	-	58	72.5	nC	VDD=50 V, ID=25 A, VGS=0 to 10 V
Gate plateau voltage	Vplateau	-	4.5	-	V	VDD=50 V, ID=25 A, VGS=0 to 10 V
Gate charge total, sync. FET	Qg(sync)	-	53	-	nC	VDS=0.1 V, VGS=0 to 10 V
Output charge¹)	Qoss	-	107	134	nC	VDS=50 V, VGS=0 V

Table-6-----Gatechargecharacteristics2)

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Diode continuous forward current	I_S	-	-	192	A	T_C=25 °C
Diode pulse current	I_S,pulse	-	-	768	A	T_C=25 °C
Diode forward voltage	V_SD	-	0.81	1.0	V	V_GS=0 V, I_F=50 A, T_J=25 °C
Reverse recovery time^1)	t_rr	-	46	69	ns	V_R=50 V, I_F=25 A, di_F/dt=100 A/μs
Reverse recovery charge^1)	Q_rr	-	62	93	nC	V_R=50 V, I_F=25 A, di_F/dt=100 A/μs
Reverse recovery time^1)	t_rr	-	25	38	ns	V_R=50 V, I_F=25 A, di_F/dt=1000 A/μs
Reverse recovery charge^1)	Q_rr	-	305	458	nC	V_R=50 V, I_F=25 A, di_F/dt=1000 A/μs

¹⁾ Defined by design. Not subject to production test.

²⁾ See ″Gate charge waveforms″ for parameter definition

Table-7-----Reversediode

DIMENSION	MIN.	MAX.
A	0.90	1.20
A1	0.15	0.35
b	0.26	0.54
D	4.80	5.35
D1	3.70	4.40
D2	0.00	0.23
E	5.70	6.10
E1	5.90	6.42
E2	3.88	4

¹⁾ Defined by design. Not subject to production test.

4-----Electricalcharacteristicsdiagrams

RDS(on)=f(ID),-

Tj=25-°C;-

parameter:-

VGS

ID=f(VDS),-

Tj=25-°C;-

parameter:-

VGS

5-----Package-Outlines

Revision	Date	Subjects (major changes since last revision)
2.0	2021-07-05	Release of final version
2.1	2023-01-05	Updated ID Pulse at Tc
2.2	2023-02-14	Update SOA Diagram

Figure-1-----Outline-PG-TDSON-8-FL,dimensionsinmm

Figure 2 Outline Boardpads (TDSON-8 FL)

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Drain-source breakdown voltage	V(BR)DSS	100	-	-	V	VGS=0 V, ID=1 mA
Gate threshold voltage	VGS(th)	2.3	2.8	3.3	V	VDS=VGS, ID=116 μA
Zero gate voltage drain current	IDSS	-	0.1	1.0	μA	VDS=80 V, VGS=0 V, TJ=25 °C
Zero gate voltage drain current	IDSS	-	10	100	μA	VDS=80 V, VGS=0 V, TJ=125 °C1)
Gate-source leakage current	IGSS	-	10	100	nA	VGS=20 V, VDS=0 V
Drain-source on-state resistance	RDS(on)	-	2.3	2.7	mΩ	VGS=10 V, ID=50 A
Drain-source on-state resistance	RDS(on)	-	2.8	3.2	mΩ	VGS=8 V, ID=25 A
Gate resistance	RG	0.6	1.2	1.8	Ω	-
Transconductance	gfs	42.5	85	-	S

1. See Diagram 13 for more detailed information

¹⁾ Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions.

²⁾ Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.

³⁾ See Diagram 3 for more detailed information