OPTIMOS-6

MOSFET

N-channel Power MOSFET

The OPTIMOS-6 is a n-channel power mosfet from Infineon Technologies. MOSFET. View the full OPTIMOS-6 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Manufacturer

Infineon Technologies

Key Specifications

Parameter	Value
Continuous Drain Current	23A (Ta), 192A (Tc)
Drain-Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
FET Type	N-Channel
Gate Charge (Qg)	72.5 nC @ 10 V
Input Capacitance (Ciss)	5500 pF @ 50 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	8-PowerTDFN
Packaging	MouseReel
Power Dissipation (Max)	3W (Ta), 217W (Tc)
Rds(on)	2.7mOhm @ 50A, 10V Ω
Standard Pack Qty	5000
Supplier Device Package	PG-TDSON-8 FL
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Threshold Voltage	3.3V @ 116µA

Overview

Part: ISC027N10NM6 from Infineon Technologies AG

Type: N-channel Power MOSFET

Description: 100 V, 192 A N-channel power MOSFET with 2.7 mΩ on-resistance, optimized for high frequency switching and synchronous rectification.

Operating Conditions:

Operating temperature: -55 to 175 °C

Absolute Maximum Ratings:

Max Drain-Source Voltage: 100 V
Max Gate-Source Voltage: ±20 V
Max Continuous Drain Current: 192 A (at T_A=25 °C)
Max Junction/Storage Temperature: 175 °C

Key Specs:

Drain-Source Voltage (V_DS): 100 V
On-Resistance (R_DS(on),max): 2.7 mΩ
Continuous Drain Current (I_D): 192 A
Input Capacitance (C_iss): 4300 pF (typ) at V_GS=0 V, V_DS=50 V, f=1 MHz
Total Gate Charge (Q_g): 58 nC (typ) at V_DD=50 V, I_D=25 A, V_GS=0 to 10 V
Reverse Recovery Charge (Q_rr): 62 nC (typ) at V_R=50 V, I_F=25 A, di_F/dt=100 A/µs
Diode Forward Voltage (V_SD): 0.81 V (typ) at V_GS=0 V, I_F=50 A, T_j=25 °C

Features:

N-channel, normal level
Very low on-resistance R_DS(on)
Excellent gate charge x R_DS(on) product (FOM)
Very low reverse recovery charge (Q_rr)
High avalanche energy rating
175°C operating temperature
Optimized for high frequency switching and synchronous rectification
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
MSL-1 classified according to J-STD-020

Applications:

Optimized for high frequency switching and synchronous rectification

Package:

PG-TDSON-8 FL

Features

•-N-channel,normallevel
•-Verylowon-resistance-RDS(on)
•-Excellentgatechargex-RDS(on)product-(FOM)
•-Verylowreverserecoverycharge-(Qrr)
•-Highavalancheenergyrating
•-175°Coperatingtemperature
•-Optimizedforhighfrequencyswitchingandsynchronousrectification
•-Pb-freeleadplating;-RoHScompliant
•-Halogen-freeaccordingto-IEC61249-2-21
•-MSL-1classifiedaccordingto-J-STD-020

Fullyqualifiedaccordingto-JEDECfor-Industrial-Applications

Table-1-----Key-Performance-Parameters

Parameter	Value	Unit
VDS	100	V
RDS(on),max	2.7	mΩ
ID	192	A
Qoss	107	nC
QG (0V...10V)	58	nC
Qrr (100A/µs)	62	nC

Type / Ordering Code	Package	Marking	Related Links
ISC027N10NM6	PG-TDSON-8 FL	027N10N6	-

Electrical Characteristics

at T_j=25 °C, unless otherwise specified

Table 4 Static characteristics

Parameter	Value	Unit
V_DS	100	V
R_DS(on),max	2.7	mΩ
I_D	192	A
Q_oss	107	nC
Q_G (0V...10V)	58	nC
Q_rr (100A/µs)	62	nC

Davamatav	Cy made al	Values			11	Nets (Test Osmalities
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Input capacitance	C _iss	-	4300	5500	pF	V _GS =0 V, V _DS =50 V, f=1 MHz
Output capacitance ¹⁾	Coss	-	960	1200	pF	V _GS =0 V, V _DS =50 V, f=1 MHz
Reverse transfer capacitance ¹⁾	C _rss	-	16	24	pF	V _GS =0 V, V _DS =50 V, f=1 MHz
Turn-on delay time	t_{rm d(on)}	-	11	-	ns	V_{rm DD} =50 V, V_{rm GS} =10 V, I_{rm D} =25 A, R_{rm G,ext} =1.6 Ω
Rise time	t _r	-	4.5	-	ns	V_{rm DD} =50 V, V_{rm GS} =10 V, I_{rm D} =25 A, R_{rm G,ext} =1.6 Ω
Turn-off delay time	t_{rm d(off)}	-	24	-	ns	V_{rm DD} =50 V, V_{rm GS} =10 V, I_{rm D} =25 A, R_{rm G,ext} =1.6 Ω
Fall time	t _f	-	5.5	-	ns	V_{rm DD} =50 V, V_{rm GS} =10 V, I_{rm D} =25 A, R_{rm G,ext} =1.6 Ω

Davamatan	O. mak al		Values			Nata (Tast Oan dition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Gate to source charge ¹⁾	Q_{rm gs}	-	19	25	nC	V_{rm DD} =50 V, I_{rm D} =25 A, V_{rm GS} =0 to 10 V
Gate charge at threshold ¹⁾	Q_g(th)	-	12	15	nC	V_{rm DD} =50 V, I_{rm D} =25 A, V_{rm GS} =0 to 10 V
Gate to drain charge ¹⁾	Q _gd	-	9.6	14.4	nC	V_{rm DD} =50 V, I_{rm D} =25 A, V_{rm GS} =0 to 10 V
Switching charge	Q _sw	-	16.9	-	nC	V_{rm DD} =50 V, I_{rm D} =25 A, V_{rm GS} =0 to 10 V
Gate charge total ¹⁾	Qg	-	58	72.5	nC	V_{rm DD} =50 V, I_{rm D} =25 A, V_{rm GS} =0 to 10 V
Gate plateau voltage	V _plateau	-	4.5	-	V	V_{rm DD} =50 V, I_{rm D} =25 A, V_{rm GS} =0 to 10 V
Gate charge total, sync. FET	Q _g(sync)	-	53	-	nC	V _DS =0.1 V, V _GS =0 to 10 V
Output charge ¹⁾	Q _oss	-	107	134	nC	V _DS =50 V, V _GS =0 V

Absolute Maximum Ratings

Table 2 Maximum ratings

Davamatav	Cumbal		Value	S	1114
Parameter	Symbol	Min.	Typ. Max.		Unit
Continuous drain current ¹⁾	I _D	- - -	- - -	192 136 124 23	A
Pulsed drain current ³⁾	I _D,pulse	-	-	768	Α
Avalanche current, single pulse ⁴⁾	I _AS	-	-	50	Α
Avalanche energy, single pulse	E AS	-	-	1057	mJ
Gate source voltage	V _GS	-20	-	20	V
Power dissipation	P _tot	-	-	217 3.0	W
Operating and storage temperature	T _j , T _stg	-55	-	175	°C

2 Thermal characteristics

Table 3 Thermal characteristics

Davamatav	Cumbal	Values			1114
Parameter	Symbol	Min.	Typ.	Max.	Unit
Thermal resistance, junction - case, bottom	R _thJC	-	0.34	0.69	°C/W
Thermal resistance, junction - case, top	R _thJC	-	-	20	°C/W
Thermal resistance, junction - ambient, 6 cm² cooling area	R _thJA	-	-	50	°C/W

¹⁾ Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual

environmental conditions.

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.
See Diagram 3 for more detailed information

^<sup>4) See Diagram 13 for more detailed information

Thermal Information

Table 3 Thermal characteristics

Davamatav	Cumbal	Values			1114
Parameter	Symbol	Min.	Typ.	Max.	Unit
Thermal resistance, junction - case, bottom	R _thJC	-	0.34	0.69	°C/W
Thermal resistance, junction - case, top	R _thJC	-	-	20	°C/W
Thermal resistance, junction - ambient, 6 cm² cooling area	R _thJA	-	-	50	°C/W

environmental conditions.

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.
See Diagram 3 for more detailed information

^<sup>4) See Diagram 13 for more detailed information

Package Information

EXCLUDING MOLD FLASH
REMOVAL ON MOLD GATE INTRUSION 0.1 MM PROTRUSION 0.1 MM LEAD LENGTH UP TO ANTI FLASH LINE ALL METAL SURFACES ARE PLATED, EXCEPT AREA OF CUT

Parameter	Value	Unit
V_DS	100	V
R_DS(on),max	2.7	mΩ
I_D	192	A
Q_oss	107	nC
Q_G (0V...10V)	58	nC
Q_rr (100A/µs)	62	nC

Figure 2 Outline Boardpads (TDSON-8 FL)

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
ISC027N10NM6	Infineon Technologies	—
ISC027N10NM6ATMA1	Infineon Technologies	8-PowerTDFN
OPTIMOSTM-6	Infineon Technologies	—

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