OPTIMOS-6

Part: ISC027N10NM6 — Infineon Technologies AG

Type: N-channel Power MOSFET

Description: 100 V, 2.7 mΩ N-channel power transistor with 192 A continuous drain current, optimized for high-frequency switching and synchronous rectification.

Operating Conditions:

• Supply voltage (VDS): up to 100 V
• Gate-source voltage (VGS): -20 to 20 V
• Operating temperature: -55 to 175 °C
• Continuous drain current: 192 A (VGS=10 V, TC=25 °C)

Absolute Maximum Ratings:

• Max drain-source voltage (VDS): 100 V
• Max gate-source voltage (VGS): ±20 V
• Max continuous drain current (ID): 192 A (TC=25 °C)
• Max junction/storage temperature: 175 °C

Key Specs:

• Drain-source breakdown voltage (V(BR)DSS): 100 V (VGS=0 V, ID=1 mA)
• Drain-source on-state resistance (RDS(on)): 2.7 mΩ (max, VGS=10 V, ID=50 A)
• Gate threshold voltage (VGS(th)): 2.3 V (min) to 3.3 V (max) (VDS=VGS, ID=116 μA)
• Input capacitance (Ciss): 4300 pF (typ) (VGS=0 V, VDS=50 V, f=1 MHz)
• Total gate charge (Qg): 58 nC (typ) (VDD=50 V, ID=25 A, VGS=0 to 10 V)
• Reverse recovery charge (Qrr): 62 nC (typ)
• Transconductance (gfs): 85 S (typ) (ID=50 A)
• Diode continuous forward current (IS): 192 A

Features:

• N-channel, normal-level
• Very low on-resistance RDS(on)
• Excellent gate-charge x RDS(on) product (FOM)
• Very low reverse recovery charge (Qrr)
• High avalanche energy rating
• 175°C operating temperature
• Optimized for high-frequency switching and synchronous rectification
• Pb-free lead-plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• MSL 1 classified according to J-STD-020

Package:

• PG-TDSON-8 FL

• ·-N-channel,-normal-level
• ·-Very-low-on-resistance-RDS(on)
• ·-Excellent-gate-charge-x-RDS(on)-product-(FOM)
• ·-Very-low-reverse-recovery-charge-(Qrr)
• ·-High-avalanche-energy-rating
• ·-175°C-operating-temperature
• ·-Optimized-for-high-frequency-switching-and-synchronous-rectification
• ·-Pb-free-lead-plating;-RoHS-compliant
• ·-Halogen-free-according-to-IEC61249-2-21
• ·-MSL-1-classified-according-to-J-STD-020