ISC027N10NM6

N-channel Power MOSFET

The ISC027N10NM6 is a n-channel power mosfet from Infineon Technologies. View the full ISC027N10NM6 datasheet below including key specifications.

Manufacturer

Infineon Technologies

Key Specifications

Parameter	Value
Continuous Drain Current	23A (Ta), 192A (Tc)
Current - Continuous Drain(Id)	192A
Current - Continuous Drain(Id)	192A
Current - Continuous Drain(Id)	192A
Current - Continuous Drain(Id)	192A
Current - Continuous Drain(Id)	192A
Drain to Source Voltage	100V
Drain to Source Voltage	100V
Drain to Source Voltage	100V
Drain to Source Voltage	100V
Drain to Source Voltage	100V
Drain-Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
FET Type	N-Channel
Gate Charge (Qg)	72.5 nC @ 10 V
Gate Charge(Qg)	58nC@10V
Gate Charge(Qg)	58nC@10V
Gate Charge(Qg)	58nC@10V
Gate Charge(Qg)	58nC@10V
Gate Charge(Qg)	58nC@10V
Gate Threshold Voltage (Vgs(th))	3.3V
Gate Threshold Voltage (Vgs(th))	3.3V
Gate Threshold Voltage (Vgs(th))	3.3V
Gate Threshold Voltage (Vgs(th))	3.3V
Gate Threshold Voltage (Vgs(th))	3.3V
Input Capacitance (Ciss)	5500 pF @ 50 V
Input Capacitance(Ciss)	5.5nF
Input Capacitance(Ciss)	5.5nF
Input Capacitance(Ciss)	5.5nF
Input Capacitance(Ciss)	5.5nF
Input Capacitance(Ciss)	5.5nF
Mounting Type	Surface Mount
Number	1 N-channel
Number	1 N-channel
Number	1 N-channel
Number	1 N-channel
Number	1 N-channel
Operating Temperature	-55℃~+175℃ °C
Operating Temperature	-55°C ~ 175°C (TJ)
Output Capacitance(Coss)	1.2nF
Output Capacitance(Coss)	1.2nF
Output Capacitance(Coss)	1.2nF
Output Capacitance(Coss)	1.2nF
Output Capacitance(Coss)	1.2nF
Package / Case	8-PowerTDFN
Packaging	MouseReel
Pd - Power Dissipation	217W
Pd - Power Dissipation	217W
Pd - Power Dissipation	217W
Pd - Power Dissipation	217W
Pd - Power Dissipation	217W
Power Dissipation (Max)	3W (Ta), 217W (Tc)
Rds(on)	2.7mOhm @ 50A, 10V Ω
RDS(on)	2.7mΩ@10V
RDS(on)	2.7mΩ@10V
RDS(on)	2.7mΩ@10V
RDS(on)	2.7mΩ@10V
RDS(on)	2.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	24pF
Reverse Transfer Capacitance (Crss@Vds)	24pF
Reverse Transfer Capacitance (Crss@Vds)	24pF
Reverse Transfer Capacitance (Crss@Vds)	24pF
Reverse Transfer Capacitance (Crss@Vds)	24pF
Standard Pack Qty	5000
Supplier Device Package	PG-TDSON-8 FL
Supplier Device Package	PG-TDSON-8 FL
Supplier Device Package	PG-TDSON-8 FL
Supplier Device Package	PG-TDSON-8 FL
Supplier Device Package	PG-TDSON-8 FL
Diode Technology	MOSFET (Metal Oxide)
Type	N-Channel
Type	N-Channel
Type	N-Channel
Type	N-Channel
Type	N-Channel
Vgs (Max)	±20V
Gate Threshold Voltage	3.3V @ 116µA

Overview

Part: ISC027N10NM6 — Infineon Technologies AG

Type: N-channel Power MOSFET

Description: 100 V, 2.7 mΩ N-channel power transistor with 192 A continuous drain current, optimized for high-frequency switching and synchronous rectification.

Operating Conditions:

Supply voltage (VDS): up to 100 V
Gate-source voltage (VGS): -20 to 20 V
Operating temperature: -55 to 175 °C
Continuous drain current: 192 A (VGS=10 V, TC=25 °C)

Absolute Maximum Ratings:

Max drain-source voltage (VDS): 100 V
Max gate-source voltage (VGS): ±20 V
Max continuous drain current (ID): 192 A (TC=25 °C)
Max junction/storage temperature: 175 °C

Key Specs:

Drain-source breakdown voltage (V(BR)DSS): 100 V (VGS=0 V, ID=1 mA)
Drain-source on-state resistance (RDS(on)): 2.7 mΩ (max, VGS=10 V, ID=50 A)
Gate threshold voltage (VGS(th)): 2.3 V (min) to 3.3 V (max) (VDS=VGS, ID=116 μA)
Input capacitance (Ciss): 4300 pF (typ) (VGS=0 V, VDS=50 V, f=1 MHz)
Total gate charge (Qg): 58 nC (typ) (VDD=50 V, ID=25 A, VGS=0 to 10 V)
Reverse recovery charge (Qrr): 62 nC (typ)
Transconductance (gfs): 85 S (typ) (ID=50 A)
Diode continuous forward current (IS): 192 A

Features:

N-channel, normal-level
Very low on-resistance RDS(on)
Excellent gate-charge x RDS(on) product (FOM)
Very low reverse recovery charge (Qrr)
High avalanche energy rating
175°C operating temperature
Optimized for high-frequency switching and synchronous rectification
Pb-free lead-plating; RoHS compliant
Halogen-free according to IEC61249-2-21
MSL 1 classified according to J-STD-020

Package:

PG-TDSON-8 FL

Features

·-N-channel,-normal-level
·-Very-low-on-resistance-RDS(on)
·-Excellent-gate-charge-x-RDS(on)-product-(FOM)
·-Very-low-reverse-recovery-charge-(Qrr)
·-High-avalanche-energy-rating
·-175°C-operating-temperature
·-Optimized-for-high-frequency-switching-and-synchronous-rectification
·-Pb-free-lead-plating;-RoHS-compliant
·-Halogen-free-according-to-IEC61249-2-21
·-MSL-1-classified-according-to-J-STD-020

Thermal Information

		Values	Values	Values	Unit
Parameter	Symbol	Min.	Typ.	Max.
Thermal resistance, junction - case, bottom	R thJC	-	0.34	0.69	°C/W
Thermal resistance, junction - case, top	R thJC	-	-	20	°C/W
Thermal resistance, junction - ambient, 6 cm² cooling area	R thJA	-	-	50	°C/W

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
ISC027N10NM6ATMA1	Infineon Technologies	8-PowerTDFN
OPTIMOS-6	Infineon Technologies	—
OPTIMOSTM-6	Infineon Technologies	PG-TDSON-8 FL

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free