ISC027N10NM6
N-channel Power MOSFETThe ISC027N10NM6 is a n-channel power mosfet from Infineon Technologies. View the full ISC027N10NM6 datasheet below including key specifications.
Official ISC027N10NM6 datasheet (PDF) — the source this page was extracted from.
Manufacturer
Infineon TechnologiesCategory
Discrete SemiconductorsISC027N10NM6 Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 23A (Ta), 192A (Tc) |
| Current - Continuous Drain(Id) | 192A |
| Drain to Source Voltage | 100V |
| Drain-Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 72.5 nC @ 10 V |
| Gate Charge(Qg) | 58nC@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Input Capacitance (Ciss) | 5500 pF @ 50 V |
| Input Capacitance(Ciss) | 5.5nF |
| Mounting Type | Surface Mount |
| Number | 1 N-channel |
| Operating Temperature | -55℃~+175℃ °C |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Output Capacitance(Coss) | 1.2nF |
| Package / Case | 8-PowerTDFN |
| Packaging | MouseReel |
| Packaging | MouseReel |
| Pd - Power Dissipation | 217W |
| Power Dissipation (Max) | 3W (Ta), 217W (Tc) |
| Rds(on) | 2.7mOhm @ 50A, 10V Ω |
| RDS(on) | 2.7mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| Standard Pack Qty | 5000 |
| Standard Pack Qty | 5000 |
| Supplier Device Package | PG-TDSON-8 FL |
| Diode Technology | MOSFET (Metal Oxide) |
| Type | N-Channel |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 3.3V @ 116µA |
ISC027N10NM6 Overview
Part: ISC027N10NM6 — Infineon Technologies AG
Type: N-channel Power MOSFET
Description: 100 V, 2.7 mΩ N-channel power MOSFET with 192 A continuous drain current, optimized for high-frequency switching and synchronous rectification, featuring very low on-resistance and 175°C operating temperature.
Operating Conditions:
- Supply voltage: 100 V (Drain-Source)
- Operating temperature: -55 to 175 °C
- Gate-source voltage: -20 to 20 V
Absolute Maximum Ratings:
- Max drain-source voltage: 100 V
- Max continuous drain current: 192 A (VGS=10 V, TC=25 °C)
- Max junction/storage temperature: 175 °C
Key Specs:
- Drain-source breakdown voltage V(BR)DSS: 100 V (VGS=0 V, ID=1 mA)
- Drain-source on-state resistance R DS(on): 2.7 mΩ (Max, VGS=10 V, ID=50 A)
- Gate threshold voltage V GS(th): 2.3 V (Min) to 3.3 V (Max) (VDS=VGS, ID=116 μA)
- Zero gate voltage drain current I DSS: 1.0 μA (Max, VDS=80 V, VGS=0 V, Tj=25 °C)
- Total gate charge Q g: 58 nC (Typ, VDD=50 V, ID=25 A, VGS=0 to 10 V)
- Output capacitance C oss: 960 pF (Typ, VGS=0 V, VDS=50 V, f=1 MHz)
- Reverse recovery charge Q rr: 62 nC (Typ)
- Transconductance g fs: 85 S (Typ)
Features:
- N-channel, normal-level
- Very low on-resistance RDS(on)
- Excellent gate-charge x RDS(on) product (FOM)
- Very low reverse recovery charge (Qrr)
- High avalanche energy rating
- 175°C operating temperature
- Optimized for high-frequency switching and synchronous rectification
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- MSL-1 classified according to J-STD-020
Package:
- PG-TDSON-8 FL
ISC027N10NM6 Features
- ·-N-channel,-normal-level
- ·-Very-low-on-resistance-RDS(on)
- ·-Excellent-gate-charge-x-RDS(on)-product-(FOM)
- ·-Very-low-reverse-recovery-charge-(Qrr)
- ·-High-avalanche-energy-rating
- ·-175°C-operating-temperature
- ·-Optimized-for-high-frequency-switching-and-synchronous-rectification
- ·-Pb-free-lead-plating;-RoHS-compliant
- ·-Halogen-free-according-to-IEC61249-2-21
- ·-MSL-1-classified-according-to-J-STD-020
ISC027N10NM6 Thermal Information
| Values | Values | Values | Unit | ||
|---|---|---|---|---|---|
| Parameter | Symbol | Min. | Typ. | Max. | |
| Thermal resistance, junction - case, bottom | R thJC | - | 0.34 | 0.69 | °C/W |
| Thermal resistance, junction - case, top | R thJC | - | - | 20 | °C/W |
| Thermal resistance, junction - ambient, 6 cm² cooling area | R thJA | - | - | 50 | °C/W |
Other Discrete Semiconductors
- 2N3904 – onsemi, NPN General - Purpose Amplifier
- 1N4148W-13-F – Diodes Incorporated, Surface-Mount Fast Switching Diode
- 1N4148W-7-F – Diodes Incorporated, Surface-Mount Fast Switching Diode
- 1N4148WS – onsemi, Fast Switching Diode
- 1N4148WS-13-F – Diodes Incorporated, Fast Switching Diode
- 1N4148WS-7-F – Diodes Incorporated, Fast Switching Diode
- 1N4148WSQ – Diodes Incorporated, Fast Switching Diode
- 1N4148WSQ-13-F – Diodes Incorporated, Fast Switching Diode
All Discrete Semiconductors datasheetsAll Infineon Technologies datasheets (140)
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