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OPTIMOSTM-6

N-channel Power MOSFET

The OPTIMOSTM-6 is a n-channel power mosfet from Infineon Technologies. View the full OPTIMOSTM-6 datasheet below including key specifications.

OPTIMOSTM-6 shares its datasheet with ISC027N10NM6ATMA1, whose page lists every part number it covers.

Official OPTIMOSTM-6 datasheet (PDF) — the source this page was extracted from.

Package

PG-TDSON-8 FL

OPTIMOSTM-6 Key Specifications

ParameterValue
Package Width (E)5.70 mm to 6.10 mm
Package Height (A)0.90 mm to 1.20 mm
Package Length (D)4.80 mm to 5.35 mm
Total Gate Charge (Typ)58 nC
Gate Source Voltage Range-20 V to 20 V
Operating Temperature Range-55 °C to 175 °C
Drain-Source Breakdown Voltage100 V
Power Dissipation (At Tc=25°C)217 W
Continuous Drain Current (At Tc=25°C)192 A
Drain-Source On-State Resistance (Max)2.7 mΩ

OPTIMOSTM-6 Overview

Part: ISC027N10NM6 — Infineon Technologies AG

Type: N-channel Power MOSFET

Description: 100 V, 2.7 mΩ N-channel power transistor with 192 A continuous drain current, optimized for high-frequency switching and synchronous rectification.

Operating Conditions:

  • Supply voltage (VDS): up to 100 V
  • Gate-source voltage (VGS): -20 to 20 V
  • Operating temperature: -55 to 175 °C
  • Continuous drain current: 192 A (VGS=10 V, TC=25 °C)

Absolute Maximum Ratings:

  • Max drain-source voltage (VDS): 100 V
  • Max gate-source voltage (VGS): ±20 V
  • Max continuous drain current (ID): 192 A (TC=25 °C)
  • Max junction/storage temperature: 175 °C

Key Specs:

  • Drain-source breakdown voltage (V(BR)DSS): 100 V (VGS=0 V, ID=1 mA)
  • Drain-source on-state resistance (RDS(on)): 2.7 mΩ (max, VGS=10 V, ID=50 A)
  • Gate threshold voltage (VGS(th)): 2.3 V (min) to 3.3 V (max) (VDS=VGS, ID=116 μA)
  • Input capacitance (Ciss): 4300 pF (typ) (VGS=0 V, VDS=50 V, f=1 MHz)
  • Total gate charge (Qg): 58 nC (typ) (VDD=50 V, ID=25 A, VGS=0 to 10 V)
  • Reverse recovery charge (Qrr): 62 nC (typ)
  • Transconductance (gfs): 85 S (typ) (ID=50 A)
  • Diode continuous forward current (IS): 192 A

Features:

  • N-channel, normal-level
  • Very low on-resistance RDS(on)
  • Excellent gate-charge x RDS(on) product (FOM)
  • Very low reverse recovery charge (Qrr)
  • High avalanche energy rating
  • 175°C operating temperature
  • Optimized for high-frequency switching and synchronous rectification
  • Pb-free lead-plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21
  • MSL 1 classified according to J-STD-020

Package:

  • PG-TDSON-8 FL

OPTIMOSTM-6 Features

  • ·-N-channel,-normal-level
  • ·-Very-low-on-resistance-RDS(on)
  • ·-Excellent-gate-charge-x-RDS(on)-product-(FOM)
  • ·-Very-low-reverse-recovery-charge-(Qrr)
  • ·-High-avalanche-energy-rating
  • ·-175°C-operating-temperature
  • ·-Optimized-for-high-frequency-switching-and-synchronous-rectification
  • ·-Pb-free-lead-plating;-RoHS-compliant
  • ·-Halogen-free-according-to-IEC61249-2-21
  • ·-MSL-1-classified-according-to-J-STD-020

OPTIMOSTM-6 Thermal Information

ValuesValuesValuesUnit
ParameterSymbolMin.Typ.Max.
Thermal resistance, junction - case, bottomR thJC-0.340.69°C/W
Thermal resistance, junction - case, topR thJC--20°C/W
Thermal resistance, junction - ambient, 6 cm² cooling areaR thJA--50°C/W

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
ISC027N10NM6Infineon Technologies—
ISC027N10NM6ATMA1Infineon Technologies8-PowerTDFN
OPTIMOS-6Infineon Technologies—

Other Discrete Semiconductors

  • 1N4148W-13-F – Diodes Incorporated, Surface-Mount Fast Switching Diode
  • 1N4148W-7-F – Diodes Incorporated, Surface-Mount Fast Switching Diode
  • 1N4148WS – onsemi, Fast Switching Diode
  • 1N4148WS-13-F – Diodes Incorporated, Fast Switching Diode
  • 1N4148WS-7-F – Diodes Incorporated, Fast Switching Diode
  • 1N4148WSQ – Diodes Incorporated, Fast Switching Diode
  • 1N4148WSQ-13-F – Diodes Incorporated, Fast Switching Diode
  • 1N4148WSQ-7-F – Diodes Incorporated, Fast Switching Diode

All Discrete Semiconductors datasheetsAll Infineon Technologies datasheets (140)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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