OPTIMOSTM-6
N-channel Power MOSFETThe OPTIMOSTM-6 is a n-channel power mosfet from Infineon Technologies. View the full OPTIMOSTM-6 datasheet below including key specifications.
Key Specifications
| Parameter | Value |
|---|---|
| Package Width (E) | 5.70 mm to 6.10 mm |
| Package Height (A) | 0.90 mm to 1.20 mm |
| Package Length (D) | 4.80 mm to 5.35 mm |
| Total Gate Charge (Typ) | 58 nC |
| Gate Source Voltage Range | -20 V to 20 V |
| Operating Temperature Range | -55 °C to 175 °C |
| Drain-Source Breakdown Voltage | 100 V |
| Power Dissipation (At Tc=25°C) | 217 W |
| Continuous Drain Current (At Tc=25°C) | 192 A |
| Drain-Source On-State Resistance (Max) | 2.7 mΩ |
Overview
Part: ISC027N10NM6 — Infineon Technologies AG
Type: N-channel Power MOSFET
Description: 100 V, 2.7 mΩ N-channel power transistor with 192 A continuous drain current, optimized for high-frequency switching and synchronous rectification.
Operating Conditions:
- Supply voltage (VDS): up to 100 V
- Gate-source voltage (VGS): -20 to 20 V
- Operating temperature: -55 to 175 °C
- Continuous drain current: 192 A (VGS=10 V, TC=25 °C)
Absolute Maximum Ratings:
- Max drain-source voltage (VDS): 100 V
- Max gate-source voltage (VGS): ±20 V
- Max continuous drain current (ID): 192 A (TC=25 °C)
- Max junction/storage temperature: 175 °C
Key Specs:
- Drain-source breakdown voltage (V(BR)DSS): 100 V (VGS=0 V, ID=1 mA)
- Drain-source on-state resistance (RDS(on)): 2.7 mΩ (max, VGS=10 V, ID=50 A)
- Gate threshold voltage (VGS(th)): 2.3 V (min) to 3.3 V (max) (VDS=VGS, ID=116 μA)
- Input capacitance (Ciss): 4300 pF (typ) (VGS=0 V, VDS=50 V, f=1 MHz)
- Total gate charge (Qg): 58 nC (typ) (VDD=50 V, ID=25 A, VGS=0 to 10 V)
- Reverse recovery charge (Qrr): 62 nC (typ)
- Transconductance (gfs): 85 S (typ) (ID=50 A)
- Diode continuous forward current (IS): 192 A
Features:
- N-channel, normal-level
- Very low on-resistance RDS(on)
- Excellent gate-charge x RDS(on) product (FOM)
- Very low reverse recovery charge (Qrr)
- High avalanche energy rating
- 175°C operating temperature
- Optimized for high-frequency switching and synchronous rectification
- Pb-free lead-plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- MSL 1 classified according to J-STD-020
Package:
- PG-TDSON-8 FL
Features
- ·-N-channel,-normal-level
- ·-Very-low-on-resistance-RDS(on)
- ·-Excellent-gate-charge-x-RDS(on)-product-(FOM)
- ·-Very-low-reverse-recovery-charge-(Qrr)
- ·-High-avalanche-energy-rating
- ·-175°C-operating-temperature
- ·-Optimized-for-high-frequency-switching-and-synchronous-rectification
- ·-Pb-free-lead-plating;-RoHS-compliant
- ·-Halogen-free-according-to-IEC61249-2-21
- ·-MSL-1-classified-according-to-J-STD-020
Thermal Information
| Values | Values | Values | Unit | ||
|---|---|---|---|---|---|
| Parameter | Symbol | Min. | Typ. | Max. | |
| Thermal resistance, junction - case, bottom | R thJC | - | 0.34 | 0.69 | °C/W |
| Thermal resistance, junction - case, top | R thJC | - | - | 20 | °C/W |
| Thermal resistance, junction - ambient, 6 cm² cooling area | R thJA | - | - | 50 | °C/W |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| ISC027N10NM6 | Infineon Technologies | — |
| ISC027N10NM6ATMA1 | Infineon Technologies | 8-PowerTDFN |
| OPTIMOS-6 | Infineon Technologies | — |
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