MURA115T3G
Ultrafast Power RectifierThe MURA115T3G is a ultrafast power rectifier from onsemi. View the full MURA115T3G datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
MURA115T3G shares its datasheet with MURA120T3, whose page lists every part number it covers.
Official MURA115T3G datasheet (PDF) — the source this page was extracted from.
MURA115T3G Key Specifications
| Parameter | Value |
|---|---|
| Weight | 70 mg (approx.) |
| Package Dimensions | 4.32 mm x 2.60 mm body (SMA, Case 403D) |
| ESD Protection (HBM) | > 4000 V (Class 3) |
| Forward Voltage (VF) Max | 0.875 V at 1.0 A, TJ = 25 C; 0.71 V at 1.0 A, TJ = 150 C |
| Reverse Current (IR) Max | 2.0 uA at 25 C; 50 uA at 150 C |
| Operating Junction Temperature | -65 C to +175 C |
| Reverse Recovery Time (Trr) Max | 35 ns |
| Thermal Resistance Junction-To-Lead | 24 C/W |
| Peak Repetitive Reverse Voltage (VRRM) | 150 V |
| Thermal Resistance Junction-To-Ambient | 216 C/W |
| Non-Repetitive Peak Surge Current (IFSM) | 40 A |
| Average Rectified Forward Current (IF(AV)) | 1.0 A at TL = 155 C; 2.0 A at TL = 135 C |
MURA115T3G Overview
Part: MURA115T3G, MURA120T3G, SURA8120T3G — ON Semiconductor
Type: Ultrafast Power Rectifier
Description: 1 A, 100–200 V ultrafast power rectifiers with low forward voltage drop and fast reverse recovery time, ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes.
Operating Conditions:
- Reverse voltage: 100–200 V
- Operating junction temperature: -65 to +175 °C
- Average rectified forward current: 2.0 A (@TL = 135 °C)
Absolute Maximum Ratings:
- Max reverse voltage: 200 V (for MURA120T3G/SURA8120T3G)
- Max continuous forward current: 2.0 A (@TL = 135 °C)
- Max junction temperature: +175 °C
Key Specs:
- Peak Repetitive Reverse Voltage (MURA115T3G): 150 V
- Peak Repetitive Reverse Voltage (MURA120T3G/SURA8120T3G): 200 V
- Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 60 Hz): 40 A
- Max Instantaneous Forward Voltage (iF = 1.0 A, TJ = 150 °C): 0.71 V
- Max Instantaneous Reverse Current (Rated DC Voltage, TJ = 25 °C): 2.0 mA
- Max Instantaneous Reverse Current (Rated DC Voltage, TJ = 150 °C): 50 mA
- Max Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/μs): 35 ns
- Thermal Resistance, Junction-to-Lead (TL = 25 °C): 24 °C/W
Features:
- Small Compact Surface Mountable Package with J-Bend Leads
- Rectangular Package for Automated Handling
- High Temperature Glass Passivated Junction
- Low Forward Voltage Drop (0.71 V Max @ 1.0 A, TJ = 150 °C)
- AEC-Q101 Qualified and PPAP Capable
- SURA8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
- All Packages are Pb-Free
Applications:
- High voltage, high frequency rectification
- Free wheeling diodes
- Protection diodes in surface mount applications
Package:
- SMA (CASE 403D-02)
MURA115T3G Features
- Small Compact Surface Mountable Package with J -Bend Leads
- Rectangular Package for Automated Handling
- High Temperature Glass Passivated Junction
- Low Forward Voltage Drop (0.71 V Max @ 1.0 A, TJ = 150 C)
- AEC -Q101 Qualified and PPAP Capable
- SURA8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
- All Packages are Pb-Free*
MURA115T3G Electrical Characteristics
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Maximum Instantaneous Forward Voltage (Note 3) (i F = 1.0 A, T J = 25 C) (i F = 1.0 A, T J = 150 C) | v F | 0.875 0.71 | V |
| Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage, T J = 25 C) (Rated DC Voltage, T J = 150 C) | i R | 2.0 50 | m A |
| Maximum Reverse Recovery Time (i F = 1.0 A, di/dt = 50 A/ m s) | t rr | 35 | ns |
- Pulse Test: Pulse Width = 300 m s, Duty Cycle 2.0%.
Figure 1. Typical Reverse Current
Figure 2. Maximum Reverse Current
IF , INSTANTANEOUS FORWARD CURRENT (A)
Figure 3. Typical Forward Voltage
Figure 4. Maximum Forward Voltage
Figure 5. Typical Capacitance
Figure 7. Current Derating, Lead
Figure 6. Maximum Capacitance
Figure 8. Current Derating, Ambient (FR -4 Board with Minimum Pad)
Figure 9. Power Dissipation
MURA115T3G Absolute Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MURA115T3G MURA120T3G/SURA8120T3G | V RRM V RWM V R | 150 | V |
| Average Rectified Forward Current @T L = 155 C C | I | A | |
| @T L = 135 | F(AV) | 200 1.0 2.0 | |
| Non-Repetitive Peak Surge | |||
| Current | I FSM | A | |
| (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | 40 | ||
| Operating Junction Temperature Range | - 65 to +175 | ||
| T J | C |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
MURA115T3G Thermal Information
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Thermal Resistance, Junction - to - Lead (T L = 25 C) (Note 1) | Psi JL (Note 2) | 24 | C/W |
| Thermal Resistance, Junction - to - Ambient (Note 1) | R q JA | 216 |
- In compliance with JEDEC 51, these values (historically represented by R q JL ) are now referenced as Psi JL .
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| MURA120T3 | onsemi | SMA |
| MURA120T3G | onsemi | DO-214AC, SMA |
| MURA120T3G-JSM | JSMICRO | SMA |
| SURA8120T3G | onsemi | SMA (CASE 403D PLASTIC) |
Other Diodes
- CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
- SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
- BSD3A311V – Brightking, ESD Protection Diode
- CH213K – WCH, Low Dropout Ideal Diode Chip
- VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)
Ask your AI agent about the MURA115T3G
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Then ask: "Can the MURA115T3G run from my 12 V rail? Check it against the datasheet limits."
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