Skip to main content

We use cookies to understand how you use our site and improve your experience. See our Privacy Policy.

MURA120T3G-JSM

Ultrafast Power Rectifier

The MURA120T3G-JSM is a ultrafast power rectifier from JSMICRO. View the full MURA120T3G-JSM datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

MURA120T3G-JSM shares its datasheet with MURA120T3, whose page lists every part number it covers.

Official MURA120T3G-JSM datasheet (PDF) — the source this page was extracted from.

Manufacturer

JSMICRO

Category

Diodes

Package

SMA

MURA120T3G-JSM Key Specifications

ParameterValue
Weight70 mg approx.
QualificationAEC-Q101 qualified, PPAP capable
ESD ProtectionHBM > 4000 V (Class 3), MM > 400 V (Class C)
Forward Voltage (VF) Max0.875 V @ 1.0 A, TJ = 25°C; 0.71 V @ 1.0 A, TJ = 150°C
Reverse Current (IR) Max2.0 µA @ TJ = 25°C; 50 µA @ TJ = 150°C
Reverse Recovery Time (Trr) Max35 ns
Package Dimensions (SMA, E X HE)4.32 mm x 5.21 mm nominal
Operating Junction Temperature Range-65°C to +175°C
Peak Repetitive Reverse Voltage (VRRM)200 V
Non-Repetitive Peak Surge Current (IFSM)40 A
Average Rectified Forward Current (IF(AV))1.0 A @ TL = 155°C; 2.0 A @ TL = 135°C
Thermal Resistance Junction-To-Lead (PsiJL)24 °C/W
Thermal Resistance Junction-To-Ambient (RθJA)216 °C/W

MURA120T3G-JSM Overview

Part: MURA115T3G, MURA120T3G, SURA8120T3G — ON Semiconductor

Type: Ultrafast Power Rectifier

Description: 1 A, 100–200 V ultrafast power rectifiers with low forward voltage drop and fast reverse recovery time, ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes.

Operating Conditions:

  • Reverse voltage: 100–200 V
  • Operating junction temperature: -65 to +175 °C
  • Average rectified forward current: 2.0 A (@TL = 135 °C)

Absolute Maximum Ratings:

  • Max reverse voltage: 200 V (for MURA120T3G/SURA8120T3G)
  • Max continuous forward current: 2.0 A (@TL = 135 °C)
  • Max junction temperature: +175 °C

Key Specs:

  • Peak Repetitive Reverse Voltage (MURA115T3G): 150 V
  • Peak Repetitive Reverse Voltage (MURA120T3G/SURA8120T3G): 200 V
  • Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 60 Hz): 40 A
  • Max Instantaneous Forward Voltage (iF = 1.0 A, TJ = 150 °C): 0.71 V
  • Max Instantaneous Reverse Current (Rated DC Voltage, TJ = 25 °C): 2.0 mA
  • Max Instantaneous Reverse Current (Rated DC Voltage, TJ = 150 °C): 50 mA
  • Max Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/μs): 35 ns
  • Thermal Resistance, Junction-to-Lead (TL = 25 °C): 24 °C/W

Features:

  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • High Temperature Glass Passivated Junction
  • Low Forward Voltage Drop (0.71 V Max @ 1.0 A, TJ = 150 °C)
  • AEC-Q101 Qualified and PPAP Capable
  • SURA8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • All Packages are Pb-Free

Applications:

  • High voltage, high frequency rectification
  • Free wheeling diodes
  • Protection diodes in surface mount applications

Package:

  • SMA (CASE 403D-02)

MURA120T3G-JSM Features

  • Small Compact Surface Mountable Package with J -Bend Leads
  • Rectangular Package for Automated Handling
  • High Temperature Glass Passivated Junction
  • Low Forward Voltage Drop (0.71 V Max @ 1.0 A, TJ = 150 C)
  • AEC -Q101 Qualified and PPAP Capable
  • SURA8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • All Packages are Pb-Free*

MURA120T3G-JSM Electrical Characteristics

CharacteristicSymbolMaxUnit
Maximum Instantaneous Forward Voltage (Note 3) (i F = 1.0 A, T J = 25 C) (i F = 1.0 A, T J = 150 C)v F0.875 0.71V
Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage, T J = 25 C) (Rated DC Voltage, T J = 150 C)i R2.0 50m A
Maximum Reverse Recovery Time (i F = 1.0 A, di/dt = 50 A/ m s)t rr35ns
  1. Pulse Test: Pulse Width = 300 m s, Duty Cycle 2.0%.

Figure 1. Typical Reverse Current

Figure 2. Maximum Reverse Current

IF , INSTANTANEOUS FORWARD CURRENT (A)

Figure 3. Typical Forward Voltage

Figure 4. Maximum Forward Voltage

Figure 5. Typical Capacitance

Figure 7. Current Derating, Lead

Figure 6. Maximum Capacitance

Figure 8. Current Derating, Ambient (FR -4 Board with Minimum Pad)

Figure 9. Power Dissipation

MURA120T3G-JSM Absolute Maximum Ratings

RatingSymbolValueUnit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MURA115T3G MURA120T3G/SURA8120T3GV RRM V RWM V R150V
Average Rectified Forward Current @T L = 155 C CIA
@T L = 135F(AV)200
1.0
2.0
Non-Repetitive Peak Surge
CurrentI FSMA
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)40
Operating Junction Temperature Range- 65 to +175
T JC

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

MURA120T3G-JSM Thermal Information

CharacteristicSymbolMaxUnit
Thermal Resistance, Junction - to - Lead (T L = 25 C) (Note 1)Psi JL (Note 2)24C/W
Thermal Resistance, Junction - to - Ambient (Note 1)R q JA216
  1. In compliance with JEDEC 51, these values (historically represented by R q JL ) are now referenced as Psi JL .

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
MURA115T3GonsemiSMA
MURA120T3onsemiSMA
MURA120T3GonsemiDO-214AC, SMA
SURA8120T3GonsemiSMA (CASE 403D PLASTIC)

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheets

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Ask your AI agent about the MURA120T3G-JSM

Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.

claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp

Then ask: "Can the MURA120T3G-JSM run from my 12 V rail? Check it against the datasheet limits."

Create a free account $2 of usage every month, no card needed.