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MURA120T3

Ultrafast Power Rectifier

The MURA120T3 is a ultrafast power rectifier from ON Semiconductor. View the full MURA120T3 datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

ON Semiconductor

Category

Diodes

Overview

Part: MURA115T3G, MURA120T3G, SURA8120T3G — ON Semiconductor

Type: Ultrafast Power Rectifier

Description: 1 A, 100–200 V ultrafast power rectifiers with low forward voltage drop and fast reverse recovery time, ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes.

Operating Conditions:

  • Reverse voltage: 100–200 V
  • Operating junction temperature: -65 to +175 °C
  • Average rectified forward current: 2.0 A (@TL = 135 °C)

Absolute Maximum Ratings:

  • Max reverse voltage: 200 V (for MURA120T3G/SURA8120T3G)
  • Max continuous forward current: 2.0 A (@TL = 135 °C)
  • Max junction temperature: +175 °C

Key Specs:

  • Peak Repetitive Reverse Voltage (MURA115T3G): 150 V
  • Peak Repetitive Reverse Voltage (MURA120T3G/SURA8120T3G): 200 V
  • Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 60 Hz): 40 A
  • Max Instantaneous Forward Voltage (iF = 1.0 A, TJ = 150 °C): 0.71 V
  • Max Instantaneous Reverse Current (Rated DC Voltage, TJ = 25 °C): 2.0 mA
  • Max Instantaneous Reverse Current (Rated DC Voltage, TJ = 150 °C): 50 mA
  • Max Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/μs): 35 ns
  • Thermal Resistance, Junction-to-Lead (TL = 25 °C): 24 °C/W

Features:

  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • High Temperature Glass Passivated Junction
  • Low Forward Voltage Drop (0.71 V Max @ 1.0 A, TJ = 150 °C)
  • AEC-Q101 Qualified and PPAP Capable
  • SURA8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • All Packages are Pb-Free

Applications:

  • High voltage, high frequency rectification
  • Free wheeling diodes
  • Protection diodes in surface mount applications

Package:

  • SMA (CASE 403D-02)

Features

  • Small Compact Surface Mountable Package with J -Bend Leads
  • Rectangular Package for Automated Handling
  • High Temperature Glass Passivated Junction
  • Low Forward Voltage Drop (0.71 V Max @ 1.0 A, TJ = 150 C)
  • AEC -Q101 Qualified and PPAP Capable
  • SURA8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • All Packages are Pb-Free*

Electrical Characteristics

CharacteristicSymbolMaxUnit
Maximum Instantaneous Forward Voltage (Note 3) (i F = 1.0 A, T J = 25 C) (i F = 1.0 A, T J = 150 C)v F0.875 0.71V
Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage, T J = 25 C) (Rated DC Voltage, T J = 150 C)i R2.0 50m A
Maximum Reverse Recovery Time (i F = 1.0 A, di/dt = 50 A/ m s)t rr35ns
  1. Pulse Test: Pulse Width = 300 m s, Duty Cycle 2.0%.

Figure 1. Typical Reverse Current

Figure 2. Maximum Reverse Current

IF , INSTANTANEOUS FORWARD CURRENT (A)

Figure 3. Typical Forward Voltage

Figure 4. Maximum Forward Voltage

Figure 5. Typical Capacitance

Figure 7. Current Derating, Lead

Figure 6. Maximum Capacitance

Figure 8. Current Derating, Ambient (FR -4 Board with Minimum Pad)

Figure 9. Power Dissipation

Absolute Maximum Ratings

RatingSymbolValueUnit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MURA115T3G MURA120T3G/SURA8120T3GV RRM V RWM V R150V
Average Rectified Forward Current @T L = 155 C CIA
@T L = 135F(AV)200
1.0
2.0
Non-Repetitive Peak Surge
CurrentI FSMA
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)40
Operating Junction Temperature Range- 65 to +175
T JC

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Thermal Information

CharacteristicSymbolMaxUnit
Thermal Resistance, Junction - to - Lead (T L = 25 C) (Note 1)Psi JL (Note 2)24C/W
Thermal Resistance, Junction - to - Ambient (Note 1)R q JA216
  1. In compliance with JEDEC 51, these values (historically represented by R q JL ) are now referenced as Psi JL .

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
MURA115T3GON Semiconductor
MURA120T3GON SemiconductorSMA(DO-214AC)
MURA1XX,ON Semiconductor
SURA8120T3GON SemiconductorSMA (CASE 403D PLASTIC)
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