MURA1XX,

Surface Mount Ultrafast Power Rectifiers

Manufacturer

ON Semiconductor

Overview

Part: ON Semiconductor MURA115T3G, MURA120T3G, SURA8120T3G

Type: Ultrafast Power Rectifier

Key Specs:

  • Low Forward Voltage Drop: 0.71 V Max @ 1.0 A, TJ = 150°C
  • Peak Repetitive Reverse Voltage (MURA115T3G): 150 V
  • Peak Repetitive Reverse Voltage (MURA120T3G/SURA8120T3G): 200 V
  • Average Rectified Forward Current: 1.0 A @ TL = 155°C
  • Average Rectified Forward Current: 2.0 A @ TL = 135°C
  • Non-Repetitive Peak Surge Current: 40 A
  • Operating Junction Temperature Range: -65 to +175 °C
  • Maximum Reverse Recovery Time: 35 ns

Features:

  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • High Temperature Glass Passivated Junction
  • Low Forward Voltage Drop (0.71 V Max @ 1.0 A, TJ = 150°C)
  • AEC-Q101 Qualified and PPAP Capable
  • SURA8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • All Packages are Pb-Free
  • ESD Protection: Human Body Model > 4000 V (Class 3)
  • ESD Protection: Machine Model > 400 V (Class C)

Applications:

  • High voltage, high frequency rectification
  • Free wheeling and protection diodes in surface mount applications where compact size and weight are critical
  • Automotive and other applications requiring unique site and control change requirements

Package:

  • SMA (CASE 403D PLASTIC): HE (Overall Length) 4.83 mm MIN / 5.59 mm MAX, E (Body Length) 4.06 mm MIN / 4.57 mm MAX, D (Body Width) 2.29 mm MIN / 2.92 mm MAX

Features

  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • High Temperature Glass Passivated Junction
  • Low Forward Voltage Drop (0.71 V Max @ 1.0 A, TJ = 150°C)
  • AEC-Q101 Qualified and PPAP Capable
  • SURA8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • All Packages are Pb-Free*

Electrical Characteristics

CharacteristicSymbolMaxUnit
Maximum Instantaneous Forward Voltage (Note 3) ( iF = 1.0 A, TJ = 25°C ) ( iF = 1.0 A, TJ = 150°C )VF0.875
0.71
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, T J = 25°C)
(Rated DC Voltage, T J = 150°C)
İR2.0
50
μΑ
Maximum Reverse Recovery Time (i F = 1.0 A, di/dt = 50 A/μs)t rr35ns

3. Pulse Test: Pulse Width = 300 μ s, Duty Cycle ≤ 2.0%.

2. In compliance with JEDEC 51, these values (historically represented by Rθ JL ) are now referenced as PsiJL .

Figure 1. Typical Reverse Current

Figure 2. Maximum Reverse Current

Figure 3. Typical Forward Voltage

Figure 4. Maximum Forward Voltage

Figure 5. Typical Capacitance

Figure 6. Maximum Capacitance

Figure 7. Current Derating, Lead

Figure 8. Current Derating, Ambient (FR-4 Board with Minimum Pad)

Figure 9. Power Dissipation

Absolute Maximum Ratings

RatingSymbolValueUnit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MURA115T3G MURA120T3G/SURA8120T3GV RRM
V RWM
V R
150
200
V
Average Rectified Forward Current @ T L = 155°C @ T L = 135°CI F(AV)1.0
2.0
Α
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I FSM40Α
Operating Junction Temperature RangeT J-65 to +175°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Thermal Information

CharacteristicSymbolMaxUnit
Thermal Resistance, Junction-to-Lead (T L = 25°C) (Note 1)Psi JL
(Note 2)
24°C/W
Thermal Resistance, Junction-to-Ambient (Note 1)R 0JA216

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
MURA115T3GON Semiconductor
MURA120T3ON Semiconductor
MURA120T3GON SemiconductorSMA(DO-214AC)
SURA8120T3GON Semiconductor
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