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MBRS540T3

Schottky Barrier Rectifier

The MBRS540T3 is a schottky barrier rectifier from onsemi. View the full MBRS540T3 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official MBRS540T3 datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

Diodes

Package

SMC

MBRS540T3 Key Specifications

ParameterValue
Dv/Dt10,000 V/µs
Weight217 mg (approx.)
Storage Temperature Range-65 °C to +150 °C
Package Dimensions (D X E)5.84 x 6.86 mm nominal body
Maximum Forward Voltage (VF)0.50 V at IF = 5.0 A, TC = 25 °C
Maximum Reverse Current (IR)0.3 mA at 25 °C, 15 mA at 100 °C
Operating Junction Temperature-65 °C to +150 °C
Peak Repetitive Forward Current (IFRM)10 A
Peak Repetitive Reverse Voltage (VRRM)40 V
Non-Repetitive Peak Surge Current (IFSM)190 A
Average Rectified Forward Current (IF(AV))5 A at TC = 105 °C
Thermal Resistance Junction-To-Lead (RθJL)12 °C/W
Thermal Resistance Junction-To-Ambient (RθJA)111 °C/W

MBRS540T3 Overview

Part: MBRS540T3G — onsemi

Type: Schottky Barrier Power Rectifier (Surface Mount)

Description: 40 V, 5.0 A Schottky barrier rectifier in an SMC package with 0.50 V maximum forward voltage at 5 A and a 190 A non-repetitive surge rating.

Operating Conditions:

  • Supply voltage: not applicable
  • Operating junction temperature: -65 to +150 °C
  • Average rectified forward current: 5 A (at rated V_R, T_C = 105 °C)

Absolute Maximum Ratings:

  • Peak repetitive reverse voltage / working peak reverse voltage / DC blocking voltage: 40 V
  • Average rectified forward current: 5 A (rated V_R, T_C = 105 °C)
  • Peak repetitive forward current: 10 A (rated V_R, square wave, 20 kHz, T_C = 80 °C)
  • Non-repetitive peak surge current: 190 A (halfwave, single phase, 60 Hz)
  • Storage temperature: -65 to +150 °C
  • Operating junction temperature: -65 to +150 °C
  • Voltage rate of change (rated V_R): 10,000 V/μs

Key Specs:

  • Maximum instantaneous forward voltage: 0.50 V (i_F = 5.0 A, T_C = 25 °C)
  • Maximum instantaneous reverse current: 0.3 mA (rated dc voltage, T_C = 25 °C)
  • Maximum instantaneous reverse current: 15 mA (rated dc voltage, T_C = 100 °C)
  • Thermal resistance, junction-to-lead: 12 °C/W
  • Thermal resistance, junction-to-ambient: 111 °C/W (Note 2) and 64 °C/W (Note 3)
  • ESD rating: Human Body Model 3B (> 8000 V); Machine Model C (> 400 V)
  • Weight: approximately 217 mg

Features:

  • Small compact surface-mountable package with J-bend leads
  • Highly stable oxide passivated junction
  • Rectangular package for automated handling
  • Excellent ability to withstand reverse avalanche energy transients
  • Guard-ring for stress protection
  • NRVB prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
  • Pb-free, halogen free/BFR free and RoHS compliant
  • MSL 1; epoxy case meets UL 94 V-0 at 0.125 in

Applications:

  • Low voltage, high frequency rectification
  • Free wheeling diodes
  • Polarity protection diodes

Package:

  • SMC 2-lead, Case 403AC (Pb-free), 2,500 / tape & reel

MBRS540T3 Features

  • Small Compact Surface Mountable Package with J-Bend Leads
  • Highly Stable Oxide Passivated Junction
  • Rectangular Package for Automated Handling
  • Excellent Ability to Withstand Reverse Avalanche Energy Transients
  • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable*
  • Guard-Ring for Stress Protection
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

MBRS540T3 Electrical Characteristics

CharacteristicSymbolValueUnit
Maximum Instantaneous Forward Voltage (Note 4) (i F = 5.0 A, T C = 25 ° C)V F0.50V
Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, T C = 25 ° C) (Rated dc Voltage, T C = 100 ° C)i R0.3 15mA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

MBRS540T3 Absolute Maximum Ratings

RatingSymbolValueUnit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking VoltageV RRM V RWM V R40V
Average Rectified Forward Current (At Rated V R , T C = 105 ° C)I F(AV)5A
Peak Repetitive Forward Current (At Rated V R , Square Wave, 20 KHz, T C = 80 ° C)I FRM10A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)I FSM190A
Storage Temperature RangeTstg- 65 to +150° C
Operating Junction Temperature (Note 1)T J- 65 to +150° C
Voltage Rate of Change (Rated V R )dv/dt10,000V/ m s

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

  1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP D /dT J < 1/R q JA .

MBRS540T3 Thermal Information

CharacteristicSymbolValueUnit
Thermal Resistance, Junction-to-Lead (Note 2)R q JL12° C/W
Thermal Resistance, Junction-to-Ambient (Note 2) Junction-to-Ambient (Note 3)R q JA111 64

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
MBRS540T3GonsemiSMC

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  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)

All Diodes datasheetsAll onsemi datasheets (357)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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