MBRS540T3
MBRS540T3
Manufacturer
onsemi
Category
Schottky Diodes & Rectifiers
Overview
Part: MBRS540T3 from ON Semiconductor Type: Schottky Barrier Rectifier
Key Specs:
- Peak Repetitive Reverse Voltage: 40 V
- Average Rectified Forward Current: 5 A
- Non-Repetitive Peak Surge Current: 190 A
- Operating Junction Temperature: -65 to +150 °C
- Maximum Instantaneous Forward Voltage: 0.50 V (at 5.0 A, TC = 25°C)
- Maximum Instantaneous Reverse Current: 0.3 mA (at Rated dc Voltage, TC = 25°C)
Features:
- Small Compact Surface Mountable Package with J-Bend Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Excellent Ability to Withstand Reverse Avalanche Energy Transients
- Guard–Ring for Stress Protection
- Pb-Free Package is Available
Applications:
- Low voltage, high frequency rectification
- Free wheeling diodes
- Polarity protection diodes
Package:
- SMC CASE 403 PLASTIC:
- Length (D): 5.59 mm to 6.10 mm
- Width (E): 6.60 mm to 7.11 mm
- Height (A): 1.90 mm to 2.41 mm
Features
- Small Compact Surface Mountable Package with J-Bend Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Excellent Ability to Withstand Reverse Avalanche Energy Transients
- Guard–Ring for Stress Protection
- Pb-Free Package is Available
Electrical Characteristics
| Maximum Instantaneous Forward Voltage (Note 3) | (i F = 5.0 A, T C = 25°C) | V F | 0.50 | V |
|---|---|---|---|---|
| Maximum Instantaneous Reverse Current (Note 3) | (Rated dc Voltage, T C = 25°C) (Rated dc Voltage, T C = 100°C) | i R | 0.3 15 | mA |
- Rating applies when surface mounted on the minimum pad size recommended.
-
- Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%.
Absolute Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | V RRM V RWM V R | 40 | V |
| Average Rectified Forward Current (At Rated V R , T C = 105°C) | I F(AV) | 5 | Α |
| Peak Repetitive Forward Current (At Rated VR , Square Wave, 20 KHz, TC = 80 °C) | I FRM | 10 | Α |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | I FSM | 190 | Α |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Operating Junction Temperature (Note 1) | TJ | -65 to +150 | °C |
| Voltage Rate of Change (Rated V R ) | dv/dt | 10,000 | V/μs |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
- The heat generated must be less than the thermal conductivity from Junction–to–Ambient: dPD/dTJ < 1/Rθ JA .
Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Thermal Resistance, | °C/W | ||
| Junction-to-Lead (Note 2) | RθJL | 12 | |
| Thermal Resistance, | |||
| Junction-to-Ambient (Note 2) | Rθ JA | 111 |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| MBRS540T3G | onsemi |
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