MMBT3904LT1G

The MMBT3904LT1G is an electronic component from onsemi. View the full MMBT3904LT1G datasheet below including key specifications.

MMBT3904LT1G shares its datasheet with MMBT3904, whose page lists every part number it covers.

Official MMBT3904LT1G datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

MMBT3904LT1G Key Specifications

Parameter	Value
Collector Current (Max)	200 mA
DC Current Gain (hFE)	100 @ 10mA, 1V
Transition Frequency	300MHz
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Power (Max)	300 mW
Supplier Device Package	SOT-23-3 (TO-236)
Transistor Type	NPN
Vce Saturation	300mV @ 5mA, 50mA
Collector-Emitter Breakdown Voltage	40 V

MMBT3904LT1G Overview

Part: MMBT3904 — Nexperia

Type: NPN switching transistor

Description: 40 V, 200 mA NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.

Operating Conditions:

Operating temperature: -65 to 150 °C
Collector current: up to 200 mA

Absolute Maximum Ratings:

Max collector-base voltage: 60 V
Max continuous collector current: 200 mA
Max junction/storage temperature: 150 °C

Key Specs:

Collector-emitter voltage (VCEO): 40 V
DC current gain (hFE): 100-300 (VCE = 1 V; IC = 10 mA; Tamb = 25 °C)
Collector-emitter saturation voltage (VCEsat): Max 200 mV (IC = 10 mA; IB = 1 mA; Tamb = 25 °C)
Base-emitter saturation voltage (VBEsat): 650-850 mV (IC = 10 mA; IB = 1 mA; Tamb = 25 °C)
Collector-base cut-off current (ICBO): Max 50 nA (VCB = 30 V; IE = 0 A; Tamb = 25 °C)
Transition frequency (fT): Min 300 MHz (VCE = 20 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C)
Total power dissipation (Ptot): 250 mW (Tamb ≤ 25 °C)
Thermal resistance from junction to ambient (Rth(j-a)): Max 500 K/W

Features:

Collector current capability IC = 200 mA
Collector-emitter voltage VCEO = 40 V

Applications:

General switching and amplification

Package:

SOT23 (3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body)

MMBT3904LT1G Features

Collector current capability I C = 200 mA
Collector-emitter voltage VCEO = 40 V

MMBT3904LT1G Thermal Information

Symbol	Parameter	Conditions		Min Typ	Max	Unit
R th(j-a)	thermal resistance from junction to ambient		[1]	- -	500	K/W

40 V, 200 mA NPN switching transistor

MMBT3904LT1G Package Information

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