MMBT3904LT1G
The MMBT3904LT1G is an electronic component from onsemi. View the full MMBT3904LT1G datasheet below including key specifications.
Key Specifications
| Parameter | Value |
|---|---|
| Collector Current (Max) | 200 mA |
| DC Current Gain (hFE) | 100 @ 10mA, 1V |
| Transition Frequency | 300MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power (Max) | 300 mW |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Transistor Type | NPN |
| Vce Saturation | 300mV @ 5mA, 50mA |
| Collector-Emitter Breakdown Voltage | 40 V |
Overview
Part: MMBT3904 — Nexperia
Type: NPN switching transistor
Description: 40 V, 200 mA NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.
Operating Conditions:
- Operating temperature: -65 to 150 °C
- Collector current: up to 200 mA
Absolute Maximum Ratings:
- Max collector-base voltage: 60 V
- Max continuous collector current: 200 mA
- Max junction/storage temperature: 150 °C
Key Specs:
- Collector-emitter voltage (VCEO): 40 V
- DC current gain (hFE): 100-300 (VCE = 1 V; IC = 10 mA; Tamb = 25 °C)
- Collector-emitter saturation voltage (VCEsat): Max 200 mV (IC = 10 mA; IB = 1 mA; Tamb = 25 °C)
- Base-emitter saturation voltage (VBEsat): 650-850 mV (IC = 10 mA; IB = 1 mA; Tamb = 25 °C)
- Collector-base cut-off current (ICBO): Max 50 nA (VCB = 30 V; IE = 0 A; Tamb = 25 °C)
- Transition frequency (fT): Min 300 MHz (VCE = 20 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C)
- Total power dissipation (Ptot): 250 mW (Tamb ≤ 25 °C)
- Thermal resistance from junction to ambient (Rth(j-a)): Max 500 K/W
Features:
- Collector current capability IC = 200 mA
- Collector-emitter voltage VCEO = 40 V
Applications:
- General switching and amplification
Package:
- SOT23 (3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body)
Features
- Collector current capability I C = 200 mA
- Collector-emitter voltage VCEO = 40 V
Thermal Information
| Symbol | Parameter | Conditions | Min Typ | Max | Unit | |
|---|---|---|---|---|---|---|
| R th(j-a) | thermal resistance from junction to ambient | [1] | - - | 500 | K/W |
40 V, 200 mA NPN switching transistor
Package Information
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| MMBT3904 | Nexperia | — |
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