MMBT3904

<span id="page-0-1"></span>2. Features and benefits

Overview

Part: MMBT3904

Type: NPN switching transistor

Key Specs:

Collector current (IC): 200 mA
Collector-emitter voltage (VCEO): 40 V
DC current gain (hFE): 100 to 300 (at VCE = 1 V, IC = 10 mA)
Total power dissipation (Ptot): 250 mW

Features:

Collector current capability IC = 200 mA
Collector-emitter voltage VCEO = 40 V
NPN switching transistor
Small SOT23 Surface-Mounted Device (SMD) plastic package

Applications:

General switching and amplification

Package:

SOT23: dimensions not provided

Features

Collector current capability IC = 200 mA
Collector-emitter voltage VCEO = 40 V

3. Applications

• General switching and amplification

4. Quick reference data

Table 1. Quick reference data

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	collector-emitter voltage	open base	-	-	40	V
IC	collector current		-	-	200	mA
hFE	DC current gain	VCE = 1 V; IC = 10 mA; tp ≤ 300 μs; δ ≤ 0.02; Tamb = 25 °C	100	-	300

5. Pinning information

Table 2. Pinning information

Pin	Symbol	Description	Simplified outline	Graphic symbol
1	B	base	3	C
2	E	emitter
3	C	collector	1 2 SOT23	B E aaa-027673

40 V, 200 mA NPN switching transistor

6. Ordering information

Table 3. Ordering information

Type number	Package
	Name
MMBT3904	SOT23

7. Marking

Table 4. Marking codes

Type number	Marking code[1]
MMBT3904	7A%

^[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions		Min	Max	Unit
VCBO	collector-base voltage	open emitter		-	60	V
VCEO	collector-emitter voltage	open base		-	40	V
VEBO	emitter-base voltage	open collector		-	6	V
IC	collector current			-	200	mA
ICM	peak collector current			-	200	mA
IBM	peak base current			-	100	mA
Ptot	total power dissipation	Tamb ≤ 25 °C	[1]	-	250	mW
Tj	junction temperature			-	150	°C
Tamb	ambient temperature			-65	150	°C
Tstg	storage temperature			-65	150	°C

^[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol	Parameter	Conditions		Min	Typ	Max	Unit
Rth(j-a)	thermal resistance from junction to ambient		[1]	-	-	500	K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

40 V, 200 mA NPN switching transistor

Thermal Information

Table 6. Thermal characteristics

Symbol	Parameter	Conditions		Min	Typ	Max	Unit
Rth(j-a)	thermal resistance from junction to ambient		[1]	-	-	500	K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

40 V, 200 mA NPN switching transistor

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free