MMBT3904

Part: MMBT3904 — Nexperia

Type: NPN switching transistor

Description: 40 V, 200 mA NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.

Operating Conditions:

• Operating temperature: -65 to 150 °C
• Collector current: up to 200 mA

Absolute Maximum Ratings:

• Max collector-base voltage: 60 V
• Max continuous collector current: 200 mA
• Max junction/storage temperature: 150 °C

Key Specs:

• Collector-emitter voltage (VCEO): 40 V
• DC current gain (hFE): 100-300 (VCE = 1 V; IC = 10 mA; Tamb = 25 °C)
• Collector-emitter saturation voltage (VCEsat): Max 200 mV (IC = 10 mA; IB = 1 mA; Tamb = 25 °C)
• Base-emitter saturation voltage (VBEsat): 650-850 mV (IC = 10 mA; IB = 1 mA; Tamb = 25 °C)
• Collector-base cut-off current (ICBO): Max 50 nA (VCB = 30 V; IE = 0 A; Tamb = 25 °C)
• Transition frequency (fT): Min 300 MHz (VCE = 20 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C)
• Total power dissipation (Ptot): 250 mW (Tamb ≤ 25 °C)
• Thermal resistance from junction to ambient (Rth(j-a)): Max 500 K/W

Features:

• Collector current capability IC = 200 mA
• Collector-emitter voltage VCEO = 40 V

Applications:

• General switching and amplification

Package:

• SOT23 (3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body)

• Collector current capability I C = 200 mA
• Collector-emitter voltage VCEO = 40 V

40 V, 200 mA NPN switching transistor