MMBT3904

NPN switching transistor

The MMBT3904 is a npn switching transistor from Nexperia. View the full MMBT3904 datasheet below including key specifications, pinout.

Official MMBT3904 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia

MMBT3904 Key Specifications

Parameter	Value
Packaging	Cut Tape
Standard Pack Qty	3000
Collector-emitter voltage (VCEO)	40 V
DC current gain (hFE)	100-300 (VCE = 1 V; IC = 10 mA; Tamb = 25 °C)
Collector-emitter saturation voltage (VCEsat)	Max 200 mV (IC = 10 mA; IB = 1 mA; Tamb = 25 °C)
Base-emitter saturation voltage (VBEsat)	650-850 mV (IC = 10 mA; IB = 1 mA; Tamb = 25 °C)
Collector-base cut-off current (ICBO)	Max 50 nA (VCB = 30 V; IE = 0 A; Tamb = 25 °C)
Transition frequency (fT)	Min 300 MHz (VCE = 20 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C)
Total power dissipation (Ptot)	250 mW (Tamb ≤ 25 °C)
Thermal resistance from junction to ambient (Rth(j-a))	Max 500 K/W

MMBT3904 Overview

Part: MMBT3904 — Nexperia

Type: NPN switching transistor

Description: 40 V, 200 mA NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.

Operating Conditions:

Operating temperature: -65 to 150 °C
Collector current: up to 200 mA

Absolute Maximum Ratings:

Max collector-base voltage: 60 V
Max continuous collector current: 200 mA
Max junction/storage temperature: 150 °C

Key Specs:

Collector-emitter voltage (VCEO): 40 V
DC current gain (hFE): 100-300 (VCE = 1 V; IC = 10 mA; Tamb = 25 °C)
Collector-emitter saturation voltage (VCEsat): Max 200 mV (IC = 10 mA; IB = 1 mA; Tamb = 25 °C)
Base-emitter saturation voltage (VBEsat): 650-850 mV (IC = 10 mA; IB = 1 mA; Tamb = 25 °C)
Collector-base cut-off current (ICBO): Max 50 nA (VCB = 30 V; IE = 0 A; Tamb = 25 °C)
Transition frequency (fT): Min 300 MHz (VCE = 20 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C)
Total power dissipation (Ptot): 250 mW (Tamb ≤ 25 °C)
Thermal resistance from junction to ambient (Rth(j-a)): Max 500 K/W

Features:

Collector current capability IC = 200 mA
Collector-emitter voltage VCEO = 40 V

Applications:

General switching and amplification

Package:

SOT23 (3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body)

MMBT3904 Features

Collector current capability I C = 200 mA
Collector-emitter voltage VCEO = 40 V

MMBT3904 Pin Configuration

MMBT3904 — SOT23 Package

Pin Number	Pin Name	Type	Description
1	B	I	Base
2	E	O	Emitter
3	C	O	Collector

Notes

Package: SOT23 (plastic, surface-mounted; 3 terminals; 1.9 mm pitch; 2.9 mm × 1.3 mm × 1 mm body)
Device Type: NPN switching transistor
Marking Code: 7A%
Absolute Maximum Ratings: V_CEO = 40 V, I_C = 200 mA, P_tot = 250 mW (T_amb ≤ 25 °C)
PNP Complement: MMBT3906

MMBT3904 Thermal Information

Symbol	Parameter	Conditions		Min Typ	Max	Unit
R th(j-a)	thermal resistance from junction to ambient		[1]	- -	500	K/W

40 V, 200 mA NPN switching transistor

MMBT3904 Package Information

More part numbers on this datasheet

Their pages show this same datasheet. Some are linked through their part family rather than checked part by part, so confirm the exact part in the ordering information.

MMBT3904LT1G

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All BJTs datasheets All Nexperia datasheets (54)

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