PDTC114EU
PDTC114EU
Overview
Part: PDTC114EU
Type: NPN Resistor-Equipped Transistor (RET)
Key Specs:
- Output current: 100 mA
- Collector-emitter voltage: 50 V
- Bias resistor 1 (input): 10 kΩ
- Bias resistor ratio (R2/R1): 1
Features:
- 100 mA output current capability
- Built-in bias resistors
- Simplifies circuit design
- Reduces component count
- Reduces pick and place costs
Applications:
- Digital application in automotive and industrial segments
- Control of IC inputs
- Cost-saving alternative for BC847/857 series in digital applications
- Switching loads
Package:
- SC-70 (SOT323): dimensions null
Features
- 100 mA output current capability
- Built-in bias resistors
- Simplifies circuit design
- Reduces component count
- Reduces pick and place costs
Applications
- Digital application in automotive and industrial segments
- Control of IC inputs
- Cost-saving alternative for BC847/857 series in digital applications
- Switching loads
Thermal Information
Table 6. Thermal characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|
| R th(j-a) | thermal resistance from junction to ambient | in free air | [1] | - | - | 625 | K/W |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NPN resistor-equipped transistors; R1 = 10 k Ω , R2 = 10 k Ω
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| PDTC114E | — | — |
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