PDTC114EU
NPN Resistor-Equipped TransistorThe PDTC114EU is a npn resistor-equipped transistor from Nexperia. View the full PDTC114EU datasheet below including key specifications.
PDTC114EU shares its datasheet with PDTC114E, whose page lists every part number it covers.
Official PDTC114EU datasheet (PDF) — the source this page was extracted from.
PDTC114EU Key Specifications
| Parameter | Value |
|---|---|
| Input Voltage (V I) | -10 V to 40 V |
| Bias Resistor 1 (R1) | 10 kΩ |
| Output Current (I O) | 100 mA |
| Bias Resistor Ratio (R2/R1) | 1 |
| Total Power Dissipation (P Tot) | 200 mW |
| Collector-Emitter Voltage (V CEO) | 50 V |
| Operating Temperature Range (T Amb) | -65 °C to 150 °C |
PDTC114EU Overview
Part: PDTC114EU — Nexperia
Type: NPN Resistor-Equipped Transistor (RET)
Description: NPN Resistor-Equipped Transistor with 10 kΩ R1 and 10 kΩ R2 bias resistors, 100 mA output current capability, and 50 V collector-emitter voltage, in a SOT323 package.
Operating Conditions:
- Input voltage: -10 to 40 V
- Operating temperature: -65 to 150 °C
- Output current: 100 mA
Absolute Maximum Ratings:
- Max collector-emitter voltage: 50 V
- Max continuous output current: 100 mA
- Max junction/storage temperature: 150 °C
Key Specs:
- Collector-emitter breakdown voltage (V(BR)CEO): 50 V (IC = 2 mA; IB = 0 A; Tamb = 25 °C)
- Collector-base breakdown voltage (V(BR)CBO): 50 V (IC = 100 μA; IE = 0 A; Tamb = 25 °C)
- Collector-emitter cut-off current (ICEO): 100 nA (VCE = 30 V; IB = 0 A; Tamb = 25 °C)
- DC current gain (hFE): 30 (VCE = 5 V; IC = 5 mA; Tamb = 25 °C)
- Collector-emitter saturation voltage (VCEsat): 150 mV (IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C)
- Bias resistor 1 (R1): 7 kΩ (Min), 10 kΩ (Typ), 13 kΩ (Max)
- Bias resistor ratio (R2/R1): 0.8 (Min), 1 (Typ), 1.2 (Max)
- Transition frequency (fT): 230 MHz (VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C)
Features:
- 100 mA output current capability
- Built-in bias resistors
- Simplifies circuit design
- Reduces component count
- Reduces pick and place costs
Applications:
- Digital application in automotive and industrial segments
- Control of IC inputs
- Cost-saving alternative for BC847/857 series in digital applications
- Switching loads
Package:
- SC-70 (SOT323) - 3 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body
PDTC114EU Features
- 100 mA output current capability
- Built-in bias resistors
- Simplifies circuit design
- Reduces component count
- Reduces pick and place costs
PDTC114EU Applications
- Digital application in automotive and industrial segments
- Control of IC inputs
- Cost-saving alternative for BC847/857 series in digital applications
- Switching loads
PDTC114EU Thermal Information
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| R th(j-a) | thermal resistance from junction to ambient in free air | [1] | - | - | 625 | K/W |
- [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PDTC114EU Package Information
Fig. 10. Package outline SC-70 (SOT323)
Other BJTs
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- 2N2219A – onsemi, NPN High Speed Switching Transistor
- 2N2222 – onsemi, NPN Silicon Amplifier Transistor
- 2N2222A – onsemi, NPN High Speed Switching Transistor
- 2N3906 – onsemi, PNP Silicon General Purpose Transistor
- 2N4921G – onsemi, NPN Medium-Power Silicon Transistor
- 2N4922G – onsemi, Medium-Power NPN Silicon Transistor
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