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PDTC114E

NPN Resistor-Equipped Transistor

The PDTC114E is a npn resistor-equipped transistor from Nexperia. View the full PDTC114E datasheet below including key specifications.

Official PDTC114E datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia

Category

BJTs

PDTC114E Key Specifications

ParameterValue
Collector-emitter breakdown voltage (V(BR)CEO)50 V (IC = 2 mA; IB = 0 A; Tamb = 25 °C)
Collector-base breakdown voltage (V(BR)CBO)50 V (IC = 100 μA; IE = 0 A; Tamb = 25 °C)
Collector-emitter cut-off current (ICEO)100 nA (VCE = 30 V; IB = 0 A; Tamb = 25 °C)
DC current gain (hFE)30 (VCE = 5 V; IC = 5 mA; Tamb = 25 °C)
Collector-emitter saturation voltage (VCEsat)150 mV (IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C)
Bias resistor 1 (R1)7 kΩ (Min), 10 kΩ (Typ), 13 kΩ (Max)
Bias resistor ratio (R2/R1)0.8 (Min), 1 (Typ), 1.2 (Max)
Transition frequency (fT)230 MHz (VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C)

PDTC114E Overview

Part: PDTC114EU — Nexperia

Type: NPN Resistor-Equipped Transistor (RET)

Description: NPN Resistor-Equipped Transistor with 10 kΩ R1 and 10 kΩ R2 bias resistors, 100 mA output current capability, and 50 V collector-emitter voltage, in a SOT323 package.

Operating Conditions:

  • Input voltage: -10 to 40 V
  • Operating temperature: -65 to 150 °C
  • Output current: 100 mA

Absolute Maximum Ratings:

  • Max collector-emitter voltage: 50 V
  • Max continuous output current: 100 mA
  • Max junction/storage temperature: 150 °C

Key Specs:

  • Collector-emitter breakdown voltage (V(BR)CEO): 50 V (IC = 2 mA; IB = 0 A; Tamb = 25 °C)
  • Collector-base breakdown voltage (V(BR)CBO): 50 V (IC = 100 μA; IE = 0 A; Tamb = 25 °C)
  • Collector-emitter cut-off current (ICEO): 100 nA (VCE = 30 V; IB = 0 A; Tamb = 25 °C)
  • DC current gain (hFE): 30 (VCE = 5 V; IC = 5 mA; Tamb = 25 °C)
  • Collector-emitter saturation voltage (VCEsat): 150 mV (IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C)
  • Bias resistor 1 (R1): 7 kΩ (Min), 10 kΩ (Typ), 13 kΩ (Max)
  • Bias resistor ratio (R2/R1): 0.8 (Min), 1 (Typ), 1.2 (Max)
  • Transition frequency (fT): 230 MHz (VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C)

Features:

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs

Applications:

  • Digital application in automotive and industrial segments
  • Control of IC inputs
  • Cost-saving alternative for BC847/857 series in digital applications
  • Switching loads

Package:

  • SC-70 (SOT323) - 3 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body

PDTC114E Features

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs

PDTC114E Applications

  • Digital application in automotive and industrial segments
  • Control of IC inputs
  • Cost-saving alternative for BC847/857 series in digital applications
  • Switching loads

PDTC114E Thermal Information

SymbolParameterConditionsMinTypMaxUnit
R th(j-a)thermal resistance from junction to ambient in free air[1]--625K/W
  • [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PDTC114E Package Information

Fig. 10. Package outline SC-70 (SOT323)

More part numbers on this datasheet

Their pages show this same datasheet. Some are linked through their part family rather than checked part by part, so confirm the exact part in the ordering information.

Other BJTs

  • DTC114ECA – GOODWORK, NPN Digital Transistor with Bias Resistors
  • BC847 – onsemi, NPN General-Purpose Transistor
  • 2N2219A – onsemi, NPN High Speed Switching Transistor
  • 2N2222 – onsemi, NPN Silicon Amplifier Transistor
  • 2N2222A – onsemi, NPN High Speed Switching Transistor
  • 2N3906 – onsemi, PNP Silicon General Purpose Transistor
  • 2N4921G – onsemi, NPN Medium-Power Silicon Transistor
  • 2N4922G – onsemi, Medium-Power NPN Silicon Transistor

All BJTs datasheetsAll Nexperia datasheets (54)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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