Diodes Datasheets
217 Diodes datasheets read into specs, pinouts and ratings, including Switching Regulators (Buck), MOSFETs and Integrated Circuits.
Diodes datasheets, page 5
217 parts · page 5 of 8. Most used first, then by part number.
BSS138-7-F
Diodes Incorporated
MOSFET N-CH 50V 200MA SOT23-3
BZT52C
Diodes Incorporated
DMG1012T
Diodes Incorporated
N-Channel Enhancement Mode MOSFET featuring low on-resistance, low gate threshold voltage, fast switching speed, and ESD protection up to 2kV.
DMG1012T-13
Diodes Incorporated
MOSFETs 20V N-Ch Enhance Mode MOSFET
DMG1012T-7
Diodes Incorporated
MOSFET N-CH 20V 630MA SOT-523
DMG3414U
Diodes Incorporated
20V N-channel enhancement mode MOSFET in SOT23 with low on-resistance (25mΩ max @ 4.5V VGS), low input capacitance and fast switching
DMG3414UQ
Diodes Incorporated
N-channel enhancement mode MOSFET with low on-resistance and fast switching speed
DMN2044UCB4
Diodes Incorporated
20V N-channel enhancement mode MOSFET with 40mΩ max RDS(ON) at 4.5V gate drive in an ultra-small 1.0mm x 1.0mm wafer-level package, for load switching and power management in portable applications
DMN62D0UT
Diodes Incorporated
60V N-channel enhancement mode MOSFET with low on-resistance, low gate threshold and fast switching for motor control and power management
DMN62D0UT-13
Diodes Incorporated
60V N-channel enhancement mode MOSFET with low on-resistance and fast switching in a SOT523 package, for motor control and power management.
DMN62D0UT-7
Diodes Incorporated
60V N-channel enhancement mode MOSFET with low on-resistance and fast switching, in SOT523 package, for motor control and power management.
DMN62D0UT4
Diodes Incorporated
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
DMN7022LFGQ
Diodes Incorporated
AEC-Q101 qualified 75V N-channel enhancement mode MOSFET with 22mΩ max RDS(ON) at 10V gate drive in a PowerDI3333-8 package; not recommended for new design (use DMTH8028LFVWQ).
DMN7022LFGQ-13
Diodes Incorporated
AEC-Q101 qualified 75V N-channel enhancement mode MOSFET in PowerDI3333-8 with 22mΩ max RDS(ON) at 10V gate drive, for automotive backlighting, power management and DC-DC converters (not recommended for new design).
DMN7022LFGQ-7
Diodes Incorporated
75V N-Channel Enhancement Mode MOSFET designed for automotive applications.
DMP2160UFDB
Diodes Incorporated
Dual P-channel enhancement mode MOSFET with low on-resistance (70mΩ @ -4.5V) and low gate threshold voltage in a low-profile U-DFN2020-6 package, AEC-Q101 qualified.
DMP2160UFDB-7
Diodes Incorporated
Dual P-Channel Enhancement Mode MOSFET featuring low on-resistance and fast switching speed.
DMP2160UFDB-7R
Diodes Incorporated
Dual P-channel enhancement mode MOSFET with low on-resistance (70mΩ @ -4.5V), -20V drain-source voltage, in a 0.5mm max height U-DFN2020-6 package; AEC-Q101 qualified.
DMP2160UFDBQ
Diodes Incorporated
Dual P-channel enhancement mode MOSFET, -20V, low RDS(ON) of 70mΩ at VGS=-4.5V, AEC-Q101 qualified, in a low-profile U-DFN2020-6 (Type B) package; the automotive-compliant variant is DMP2160UFDBQ under a separate datasheet
DMP3099L
Diodes Incorporated
DMP3099L-13
Diodes Incorporated
DMP3099L-7
Diodes Incorporated
-30V P-channel enhancement mode MOSFET with 65mΩ max RDS(ON) at VGS=-10V and -3.8A continuous drain current, in SOT23 package, for power-management applications
DMP3099LQ
Diodes Incorporated
HD01
Diodes Incorporated
0.8A surface-mount glass passivated bridge rectifier in MiniDIP package with 100V reverse voltage rating and 30A surge capability
HD01-T
Diodes Incorporated
Bridge Rectifiers 0.8A 100V
HD02
Diodes Incorporated
0.8A surface-mount glass passivated bridge rectifier, 200V repetitive peak reverse voltage, in MiniDIP package
HD04
Diodes Incorporated
0.8A Surface-Mount Glass Passivated Bridge Rectifier
HD06
Diodes Incorporated
0.8A surface-mount glass passivated bridge rectifier in MiniDIP package; HD06 variant rated for 600V peak repetitive reverse voltage.
LM4040
Diodes Incorporated
Voltage References
LM4040-2.5
Diodes Incorporated
2.500V fixed reverse-breakdown precision micropower shunt voltage reference in a subminiature SOT-23 package, requiring no output capacitor and tolerating capacitive loads.