BAV116T-7

Ultra-Low Leakage Switching Diode

The BAV116T-7 is a ultra-low leakage switching diode from Diodes Incorporated. View the full BAV116T-7 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official BAV116T-7 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Diodes Incorporated

BAV116T-7 Key Specifications

Parameter	Value
Average Rectified Current	100 mA
Capacitance @ Vr, F	2pF @ 0V, 1MHz
China RoHS	Compliant
Current - Average Rectified (Io)	100mA
Reverse Leakage Current	5 nA @ 75 V
Introduction Date	2016-01-20
Lifecycle Status	Production (Last Updated: 7 months ago)
Max Operating Temperature	150 °C
Max Output Current	100 mA
Max Power Dissipation	280 mW
Max Reverse Voltage (DC)	85 V
Min Operating Temperature	-65 °C
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Elements	1
Number of Terminals	2
Operating Temperature - Junction	-65°C ~ 150°C
Package / Case	SC-79, SOD-523
Packaging	MouseReel
REACH SVHC	Yes
Reverse Recovery Time	3 µs
Reverse Recovery Time	3 µs
Reverse Standoff Voltage	85 V
RoHS	Compliant
Schedule B	8541100070, 8541100070\|8541100070\|8541100070\|8541100070\|8541100070
Clock Speed	Small Signal =< 200mA (Io), Any Speed Hz
Standard Pack Qty	3000
Supplier Device Package	SOD-523
Diode Technology	Standard
Reverse Voltage (Max)	85 V
Forward Voltage (Max)	1.1 V @ 50 mA

BAV116T-7 Overview

Part: BAV116T — Diodes Incorporated

Type: Ultra Low Leakage Surface Mount Switching Diode

Description: 85 V, 200 mA ultra-low leakage surface mount diode featuring 5 nA maximum reverse current at 75 V and low capacitance in a compact SOD523 package.

Operating Conditions:

Operating temperature: -65 to +150 °C

Absolute Maximum Ratings:

Peak Repetitive Reverse Voltage: 85 V
RMS Reverse Voltage: 60 V
Forward Continuous Current: 200 mA
Average Rectified Output Current: 100 mA
Repetitive Peak Forward Current: 500 mA
Non-Repetitive Peak Forward Surge Current: 4.0 A (t = 1.0 μs), 1.0 A (t = 1.0 ms), 0.5 A (t = 1.0 s)
Power Dissipation: 280 mW
Max junction/storage temperature: 150 °C (TJ, TSTG: -65 to +150 °C)

Key Specs:

Reverse Breakdown Voltage: min 85 V (IR = 100 μA)
Forward Voltage: max 0.9 V at IF = 1.0 mA, typ 0.77 V
Forward Voltage: max 1.0 V at IF = 10 mA, typ 0.85 V
Forward Voltage: max 1.1 V at IF = 50 mA, typ 0.92 V
Forward Voltage: max 1.25 V at IF = 150 mA, typ 1.02 V
Reverse Leakage Current: max 5.0 nA (VR = 75 V, TA = +25 °C), typ 0.2 nA
Reverse Leakage Current: max 80 nA (VR = 75 V, TJ = +150 °C), typ 3.0 nA
Total Capacitance: typ 1.2 pF, max 2.0 pF (VR = 0, f = 1.0 MHz)
Reverse Recovery Time: typ 0.6 μs, max 3.0 μs (IF = IR = 10 mA, IRR = 0.1 × IR, RL = 100 Ω)

Features:

Small Surface Mount Package
Ultra-Low Reverse Leakage Current (5 nA @ VR = 75 V)
Low Capacitance
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. "Green" Device
Moisture Sensitivity Level 1 per J-STD-020

Package:

SOD523

BAV116T-7 Features

Small Surface Mount Package
Ultra-Low Reverse Leakage Current (5nA @ VR = 75V)
Low Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. 'Green' Device (Note 3)

BAV116T-7 Electrical Characteristics

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
Reverse Breakdown Voltage (Note 6)	V (BR)R	85	-	-	V	I R = 100μA
Forward Voltage	V F	- - - -	0.77 0.85 0.92 1.02	0.9 1.0 1.1 1.25	V	I F = 1.0mA I F = 10mA I F = 50mA I F = 150mA
Leakage Current (Note 6)	I R	- - -	0.2 3.0 0.3	5.0 80 -	nA nA nA	V R = 75V V R = 75V, T J = +150°C V R = 100V
Total Capacitance	C T	-	1.2	2.0	pF	V R = 0, f = 1.0MHz
Reverse Recovery Time	t RR	-	0.6	3.0	μs	I F = I R = 10mA, I RR = 0.1 x I R , R L = 100Ω

Notes:

Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.

ADVANCED INFORMATION

Figure 1 Power Derating Curve, Total Package

ADVANCED INFORMATION

BAV116T-7 Absolute Maximum Ratings

Characteristic	Characteristic	Symbol	Value	Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	V RRM VRWM V R	85	V
RMS Reverse Voltage	RMS Reverse Voltage	V R(RMS)	60	V
Forward Continuous Current	Forward Continuous Current	I FM	200	mA
Average Rectified Output Current	Average Rectified Output Current	I O	100	mA
Repetitive Peak Forward Current	Repetitive Peak Forward Current	I FRM	500	mA
Non-Repetitive Peak Forward Surge Current	@t = 1.0μs @t = 1.0ms @t = 1.0s	I FSM	4.0 1.0 0.5	A

BAV116T-7 Thermal Information

Characteristic	Symbol	Value	Unit
Power Dissipation (Note 5)	P D	280	mW
Thermal Resistance Junction to Ambient Air (Note 5)	R θJA	450	°C/W
Thermal Resistance Junction to Soldering Point	R θJS	120	°C/W
Operating and Storage Temperature Range	T J , T STG	-65 to +150	°C

BAV116T-7 Package Information

Case: SOD523
Case Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Band
Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.0014 grams (Approximate)

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
BAV116T	Diodes Incorporated	SOD523

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