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BAV116T

Switching Diode

The BAV116T is a switching diode from Diodes Incorporated. View the full BAV116T datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

BAV116T shares its datasheet with BAV116T-7, whose page lists every part number it covers.

Official BAV116T datasheet (PDF) — the source this page was extracted from.

Manufacturer

Diodes Incorporated

Category

Diodes

Package

SOD523

BAV116T Key Specifications

ParameterValue
Forward Voltage0.9V to 1.25V (varies by current)
Power Dissipation280mW
Total Capacitance1.2pF (typ) to 2.0pF (max)
Reverse Recovery Time0.6μs (typ) to 3.0μs (max)
Reverse Leakage Current5nA (at VR = 75V)
Forward Continuous Current200mA
Operating Temperature Range-65°C to +150°C
Peak Repetitive Reverse Voltage85V
Average Rectified Output Current100mA
Thermal Resistance Junction To Ambient450°C/W

BAV116T Overview

Part: BAV116T — Diodes Incorporated

Type: Ultra Low Leakage Surface Mount Switching Diode

Description: 85 V, 200 mA ultra-low leakage surface mount diode featuring 5 nA maximum reverse current at 75 V and low capacitance in a compact SOD523 package.

Operating Conditions:

  • Operating temperature: -65 to +150 °C

Absolute Maximum Ratings:

  • Peak Repetitive Reverse Voltage: 85 V
  • RMS Reverse Voltage: 60 V
  • Forward Continuous Current: 200 mA
  • Average Rectified Output Current: 100 mA
  • Repetitive Peak Forward Current: 500 mA
  • Non-Repetitive Peak Forward Surge Current: 4.0 A (t = 1.0 μs), 1.0 A (t = 1.0 ms), 0.5 A (t = 1.0 s)
  • Power Dissipation: 280 mW
  • Max junction/storage temperature: 150 °C (TJ, TSTG: -65 to +150 °C)

Key Specs:

  • Reverse Breakdown Voltage: min 85 V (IR = 100 μA)
  • Forward Voltage: max 0.9 V at IF = 1.0 mA, typ 0.77 V
  • Forward Voltage: max 1.0 V at IF = 10 mA, typ 0.85 V
  • Forward Voltage: max 1.1 V at IF = 50 mA, typ 0.92 V
  • Forward Voltage: max 1.25 V at IF = 150 mA, typ 1.02 V
  • Reverse Leakage Current: max 5.0 nA (VR = 75 V, TA = +25 °C), typ 0.2 nA
  • Reverse Leakage Current: max 80 nA (VR = 75 V, TJ = +150 °C), typ 3.0 nA
  • Total Capacitance: typ 1.2 pF, max 2.0 pF (VR = 0, f = 1.0 MHz)
  • Reverse Recovery Time: typ 0.6 μs, max 3.0 μs (IF = IR = 10 mA, IRR = 0.1 × IR, RL = 100 Ω)

Features:

  • Small Surface Mount Package
  • Ultra-Low Reverse Leakage Current (5 nA @ VR = 75 V)
  • Low Capacitance
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. "Green" Device
  • Moisture Sensitivity Level 1 per J-STD-020

Package:

  • SOD523

BAV116T Features

  • Small Surface Mount Package
  • Ultra-Low Reverse Leakage Current (5nA @ VR = 75V)
  • Low Capacitance
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. 'Green' Device (Note 3)

BAV116T Electrical Characteristics

CharacteristicSymbolMinTypMaxUnitTest Condition
Reverse Breakdown Voltage (Note 6)V (BR)R85--VI R = 100μA
Forward VoltageV F- - - -0.77 0.85 0.92 1.020.9 1.0 1.1 1.25VI F = 1.0mA I F = 10mA I F = 50mA I F = 150mA
Leakage Current (Note 6)I R- - -0.2 3.0 0.35.0 80 -nA nA nAV R = 75V V R = 75V, T J = +150°C V R = 100V
Total CapacitanceC T-1.22.0pFV R = 0, f = 1.0MHz
Reverse Recovery Timet RR-0.63.0μsI F = I R = 10mA, I RR = 0.1 x I R , R L = 100Ω

Notes:

  1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

  2. Short duration pulse test used to minimize self-heating effect.

ADVANCED INFORMATION

ADVANCED INFORMATION

A

Figure 1 Power Derating Curve, Total Package

ADVANCED INFORMATION

ADVANCED INFORMATION

BAV116T Absolute Maximum Ratings

CharacteristicCharacteristicSymbolValueUnit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking VoltagePeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking VoltageV RRM VRWM V R85V
RMS Reverse VoltageRMS Reverse VoltageV R(RMS)60V
Forward Continuous CurrentForward Continuous CurrentI FM200mA
Average Rectified Output CurrentAverage Rectified Output CurrentI O100mA
Repetitive Peak Forward CurrentRepetitive Peak Forward CurrentI FRM500mA
Non-Repetitive Peak Forward Surge Current@t = 1.0μs @t = 1.0ms @t = 1.0sI FSM4.0 1.0 0.5A

BAV116T Thermal Information

CharacteristicSymbolValueUnit
Power Dissipation (Note 5)P D280mW
Thermal Resistance Junction to Ambient Air (Note 5)R θJA450°C/W
Thermal Resistance Junction to Soldering PointR θJS120°C/W
Operating and Storage Temperature RangeT J , T STG-65 to +150°C

BAV116T Package Information

  • Case: SOD523
  • Case Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: Cathode Band
  • Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.0014 grams (Approximate)

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
BAV116T-7Diodes IncorporatedSC-79, SOD-523

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All Diodes datasheetsAll Diodes datasheets (217)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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