BZT52C

Mechanical Data

Manufacturer

Diodes Incorporated

Overview

Part: Diodes Incorporated BZT52C Series

Type: Surface Mount Zener Diode

Key Specs:

  • Power Dissipation: 500mW
  • Forward Voltage: 0.9V @ IF = 10mA
  • Operating and Storage Temperature Range: -65 to +150 °C

Features:

  • Planar Die Construction
  • 500mW Power Dissipation
  • General Purpose, Medium Current
  • Ideally Suited for Automated Assembly Processes
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. "Green" Device
  • Qualified to AEC-Q101 Standards for High Reliability

Applications:

  • null

Package:

  • SOD123: 0.010 grams (Approximate)

Features

  • Planar Die Construction
  • 500mW Power Dissipation
  • General Purpose, Medium Current
  • Ideally Suited for Automated Assembly Processes
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. "Green" Device (Notes 3 & 4)
  • Qualified to AEC-Q101 Standards for High Reliability

Electrical Characteristics

Type
Number
Marking
Codes
Zener Voltage Range
(Note 10)
Maximum Zener
Impedance
f = 1kHz
Maximum
Reverse
Current
(Note 10)
Temperature
Coefficient
@ IZTC
mV/C
Test
Current
IZTC
VZ @ IZTIZTZZT @ IZTZZK @ IZKIZKIR@ VR
Nom (V)Min (V)Max (V)mAΩmAuAVMinMaxmA
BZT52C2V0WY2.01.912.0951006001.01501.0-3.505
BZT52C2V4WX2.42.22.651006001.0501.0-3.505
BZT52C2V7W12.72.52.951006001.0201.0-3.505
BZT52C3V0W23.02.83.25956001.0101.0-3.505
BZT52C3V3W33.33.13.55956001.05.01.0-3.505
BZT52C3V6W43.63.43.85906001.05.01.0-3.505
BZT52C3V9W53.93.74.15906001.03.01.0-3.505
BZT52C4V3W64.34.04.65906001.03.01.0-3.505
BZT52C4V7W74.74.45.05805001.03.02.0-3.50.25
BZT52C5V1W85.14.85.45604801.02.02.0-2.71.25
BZT52C5V6W95.65.26.05404001.01.02.0-22.55
BZT52C6V2WA6.25.86.65101501.03.04.00.43.75
BZT52C6V8WB6.86.47.2515801.02.04.01.24.55
BZT52C7V5WC7.57.07.9515801.01.05.02.55.35
BZT52C8V2WD8.27.78.7515801.00.75.03.26.25
BZT52C9V1WE9.18.59.65151001.00.56.03.87.05
BZT52C10WF109.410.65201501.00.27.04.58.05
BZT52C11WG1110.411.65201501.00.18.05.49.05
BZT52C12WH1211.412.75251501.00.18.06.010.05
BZT52C13WI1312.414.15301701.00.18.07.011.05
BZT52C15WJ1513.815.65302001.00.110.59.213.05
BZT52C16WK1615.317.15402001.00.111.210.414.05
BZT52C18WL1816.819.15452251.00.112.612.416.05
BZT52C20WM2018.821.25552251.00.114.014.418.05
BZT52C22WN2220.823.35552501.00.115.416.4-5
BZT52C24WO2422.825.65702501.00.116.818.4-5
BZT52C27WP2725.128.92803000.50.118.921.4-2
BZT52C30WQ3028.032.02803000.50.121.024.4-2
BZT52C33WR3331.035.02803250.50.123.127.4-2
BZT52C36WS3634.038.02903500.50.125.230.4-2
BZT52C39WT3937.041.021303500.50.127.333.4-2
BZT52C43WU4340.046.051007001.00.132.037.6-5
BZT52C47WV4744.050.051007501.00.135.042.0-5
BZT52C51WW5148.054.051007501.00.138.046.6-5

8. Device mounted on FR-4 PCB with 1 inch copper pad layout.

9. Thermal Resistance measurement obtained via infrared scan method.

10. Short duration pulse test used to minimize self-heating effect.

Fig. 5 Typical Total Capacitance vs. Nominal Zener Voltage

Fig. 2 Typical Zener Breakdown Characteristics

Fig. 4 Typical Zener Breakdown Characteristics

Absolute Maximum Ratings

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

CharacteristicSymbolValueUnit
Forward Voltage
@ IF = 10mA
VF0.9V

Thermal Information

CharacteristicSymbolValueUnit
Power Dissipation (Note 7) @TL = +75°CPD500mW
Power Dissipation (Note 8) @TA = +25°CPD370mW
Thermal Resistance, Junction to Ambient Air (Note 8)RθJA338°C/W
Thermal Resistance, Junction to Lead (Note 9)RθJL150°C/W
Operating and Storage Temperature RangeTJ, TSTG-65 to +150°C

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
BZT52C3V0Diodes IncorporatedSOD-123
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