Discrete Semiconductors Datasheets

SS8550

onsemi

-55℃~+150℃ 1 PNP 1.5A 100MHz 100nA 120 25V 300mW 500mV 5V PNP SOT-23 Bipolar (BJT) ROHS

SSB43L

Vishay General Semiconductor - Diodes Division

Surface mount 40V, 5A Schottky barrier rectifier with low forward voltage (0.44V at 5A) in a DO-214AA (SMB) package

SSB43L-E3-52T

Vishay General Semiconductor - Diodes Division

Surface mount 40V, 5A Schottky barrier rectifier in DO-214AA (SMB) package with low forward voltage and high surge current capability

SSB43L-E3/52T

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 30V 4A DO214AA

SSM14N956L

Toshiba

Silicon N-channel MOSFET with very low source-source on-resistance (1.0 mOhm typ. at VGS=4.5V) for lithium-ion battery protection circuits

SSM14N956L,EFF

Toshiba

12V Common Drain Mosfet Rss(on):

SSM3J332R

Toshiba

MOSFET P-CH 30V 6A SOT23F

SSM3J332R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 6A SOT23F

SSM3J338R

Toshiba

1W(Ta) 10V 1V@1mA 19.5nC@ 4.5 V 1P 12V 17.6m¦¸@ 6A, 8V 6A 1.4nF@6V SOT-23F 2.9mm*1.8mm*800¦Ìm

SSM3J338R,LF

Toshiba

1W(Ta) 10V 1V@1mA 19.5nC@ 4.5 V 1P 12V 17.6m¦¸@ 6A, 8V 6A 1.4nF@6V SOT-23F 2.9mm*1.8mm*800¦Ìm

SSM3K333R

Toshiba

MOSFETs

SSM3K333R,LF(T

Toshiba

N-Channel 30V 6A 2.5V @ 100uA 28mΩ @ 5A, 10V 1W SOT-23F MOSFET RoHS

STB55NF06L-1

STMicroelectronics

60V, 55A N-channel STripFET II logic-level power MOSFET with low on-resistance, 100% avalanche tested, for switching applications

STB55NF06LT4

STMicroelectronics

60V, 55A N-channel logic-level STripFET II Power MOSFET with RDS(on) below 0.018 Ω, 100% avalanche tested, for switching applications

STL6P3LLH6

STMicroelectronics

MOSFET P-CH 30V 6A POWERFLAT

STL6P3LLH6-MS

STMicroelectronics

P-channel Power MOSFET developed using STripFET H6 technology, featuring very low on-resistance and high avalanche ruggedness, suitable for switching applications.

STP55NF06L

STMicroelectronics

N-channel Power MOSFET featuring low on-resistance, rugged avalanche characteristics, and high packing density, developed using STMicroelectronics' "Single Feature Size™" strip-based process.

STPS5L25

STMicroelectronics

Single low forward voltage drop Schottky rectifier in DPAK for switch mode power supplies and high frequency DC-DC converters, intended as secondary rectifier in 3.3 V SMPS units.

STPS5L25B-TR

STMicroelectronics

DIODE SCHOTTKY 25V 5A DPAK

STPS5L60

STMicroelectronics

5 A, 60 V power Schottky rectifier with low forward voltage drop and negligible switching losses, avalanche rated, for switch mode power supplies and high frequency DC/DC converters

STPS6M100SF

STMicroelectronics

DIODE SCHOTTKY 100V 6A TO277A

STR2P3LLH6

STMicroelectronics

MOSFET P-CH 30V 2A SOT-23

STTA1206D

STMicroelectronics

TURBOSWITCH 600V, 12A ultra-fast soft-recovery freewheel/booster diode for motor control and PFC applications

STTA1206DI

STMicroelectronics

600V, 12A TURBOSWITCH ultra-fast soft-recovery freewheel/booster diode with electrically insulated TO-220AC package

STTA1206G

STMicroelectronics

TURBOSWITCH 600V, 12A ultra-fast soft-recovery rectifier diode for freewheel/booster applications, offered here in D2PAK

SURA8120T3G

onsemi

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

SZ1SMB5913BT3G

onsemi

3 W plastic surface mount Zener diode, 3.3 V nominal (3.13-3.47 V) device from the 1SMB59xxBT3G series, AEC-Q101 qualified automotive SZ-prefix variant

SZ1SMB5914BT3G

onsemi

3 W plastic surface mount Zener diode, 3.6 V nominal, AEC-Q101 qualified automotive (SZ prefix) variant in SMB package

SZ1SMB5956BT3G

onsemi

3 W plastic surface mount Zener voltage regulator diode, 200 V nominal (190-210 V), AEC-Q101 qualified automotive variant in SMB package

SZ5520

EIC Semiconductor

Zener Diode Single 20V 5% 7Ohm 3000mW 2-Pin SMA