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SS34

Schottky Rectifier

The SS34 is a schottky rectifier from Shenzhen Slkormicro Semicon Co., Ltd.. View the full SS34 datasheet below including key specifications, electrical characteristics.

Official SS34 datasheet (PDF) — the source this page was extracted from.

Category

Diodes

Package

DO-214AC, SMA

SS34 Key Specifications

ParameterValue
Capacitance @ Vr, F250pF @ 4V, 1MHz
Current - Average Rectified (Io)3A
Reverse Leakage Current500 µA @ 40 V
Mounting TypeSurface Mount
Operating Temperature - Junction-55°C ~ 125°C
Package / CaseDO-214AC, SMA
Clock SpeedFast Recovery =< 500ns, > 200mA (Io) Hz
Supplier Device PackageDO-214AC (SMA)
Diode TechnologySchottky
Reverse Voltage (Max)40 V
Forward Voltage (Max)550 mV @ 3 A

SS34 Overview

Part: Fairchild Semiconductor SS32-S310 series

Type: Schottky Rectifier

Description: High-efficiency, low power loss, general-purpose Schottky rectifiers with 3 A average forward current and repetitive reverse voltages from 20 V to 100 V.

Operating Conditions:

  • Supply voltage: Up to 100 V (Repetitive Reverse Voltage)
  • Operating temperature: -55 to +150 °C (Junction)
  • Max average forward current: 3.0 A at T A = 75 °C

Absolute Maximum Ratings:

  • Max supply voltage: 100 V (Repetitive Reverse Voltage)
  • Max continuous current: 3.0 A (at T A = 75 °C)
  • Max junction/storage temperature: -55 to +150 °C

Key Specs:

  • Maximum Repetitive Reverse Voltage (V RRM): 20 V (SS32) to 100 V (S310)
  • Maximum Average Forward Current (I F(AV)): 3.0 A (at T A = 75 °C)
  • Non-Repetitive Peak Forward Surge Current (I FSM): 100 A (8.3 ms Single Half-Sine Wave)
  • Forward Voltage (V F): 500 mV (SS33, I F = 3.0 A) to 850 mV (SS39, I F = 3.0 A)
  • Reverse Current (I R): 0.5 mA (SS35, T A = 25 °C, at Rated V R)
  • Reverse Current (I R): 10 mA (SS35/SS36/SS38/SS39/S310, T A = 100 °C, at Rated V R)
  • Power Dissipation (P D): 2.27 W
  • Thermal Resistance, Junction to Ambient (R θ JA): 55 °C/W

Features:

  • Metal to Silicon Rectifiers, Majority Carrier Conduction
  • Low-Forward Voltage Drop
  • Easy Pick and Place
  • High-Surge Current Capability

Applications:

  • Free wheeling
  • Secondary rectification
  • Reverse polarity protection

Package:

  • DO-214AB

SS34 Features

  • Metal to Silicon Rectifiers, Majority Carrier Conduction
  • Low-Forward Voltage Drop
  • Easy Pick and Place
  • High-Surge Current Capability

Ordering Information Absolute Maximum Ratings www.datasheet.live

SS34 Electrical Characteristics

Values are at T A = 25°C unless otherwise noted.

SymbolParameterTestValueValueValueValueValueValueValueValueUnits
SymbolParameterConditionsSS32SS33SS34SS35SS36SS38SS39S310Units
V FForwarded VoltageI F = 3.0 A500750850mV
I RReverse Current at Rated V RT A = 25 ° C0.5mA
I RT A = 100 ° C201010101010mA

SS34 Thermal Information

SymbolParameterValueUnits
P DPower Dissipation2.27W
R θ JAThermal Resistance, Junction to Ambient (1)55° C/W
R θ JLThermal Resistance, Junction to Lead17° C/W

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)

All Diodes datasheetsAll Shenzhen Slkormicro Semicon datasheets (3)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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