SS8550
PNP General Purpose TransistorThe SS8550 is a pnp general purpose transistor from onsemi. View the full SS8550 datasheet below including key specifications, electrical characteristics.
Official SS8550 datasheet (PDF) — the source this page was extracted from.
SS8550 Key Specifications
| Parameter | Value |
|---|---|
| DC Current Gain (HFE1) | 120 to 350 at VCE=-1V, IC=-100mA |
| DC Current Gain (HFE2) | 40 min at VCE=-1V, IC=-800mA |
| Collector Current (ICM) | -1.5 A |
| Power Dissipation (PCM) | 0.3 W |
| Output Capacitance (COB) | 20 pF max |
| Transition Frequency (FT) | 100 MHz min |
| Emitter-Base Voltage (BVEBO) | -5 V |
| Collector-Base Voltage (BVCBO) | -40 V |
| Collector Cutoff Current (ICBO) | -0.1 μA max |
| Collector-Emitter Voltage (BVCEO) | -25 V |
| Operating And Storage Temperature Range | -55°C to +150°C |
| Base-Emitter Saturation Voltage (VBE(Sat)) | 1.2 V max at IC=-800mA, IB=-80mA |
| Collector-Emitter Saturation Voltage (VCE(Sat)) | 0.5 V max at IC=-800mA, IB=-80mA |
SS8550 Overview
Part: SS8550
Type: PNP Silicon General Purpose Transistor
Description: PNP general purpose transistor with -40 V collector-base voltage and -1.5 A collector current.
Operating Conditions:
- Collector-base voltage: up to -40 V
- Collector-emitter voltage: up to -25 V
- Emitter-base voltage: up to -5 V
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max collector-base voltage: -40 V
- Max collector current: -1.5 A
- Max junction/storage temperature: +150 °C
Key Specs:
- Collector-base breakdown voltage (BV CBO): -40 V (Ic = 100 μA, IE = 0)
- Collector-emitter breakdown voltage (BV CEO): -25 V (Ic = -0.1mA, IB = 0)
- Collector-emitter saturation voltage (V CE(sat)): 0.5 V (IC = -800 mA, IB = -80mA)
- DC current gain (h FE1): 120-350 (V CE = -1V, I C =-100mA)
- Transition frequency (f T): 100 MHz (V CE = -10V, I C = -50mA, f = 30MHz)
- Output capacitance (C OB): 20 pF (V CB = -10V, I E =0, f=1MHz)
Features:
- Power dissipation: 0.3 W
- RoHS Compliant Product
- Halogen & lead-free option ('-C' suffix)
Applications:
Package:
SS8550 Features
- z Power dissipation
PCM : 0.3 W
- z Collector Current
I
CM : - 1.5 A
- z Collector-base voltage
$$V(BR)CBO : - 40 V$$
- z Operating & storage junction temperature
$$TJ, TSTG : - 55°C ~ + 150°C$$
SS8550 Electrical Characteristics
| Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|
| BV CBO | -40 | - | - | V | Ic = 100 μ A, I E = 0 |
| BV CEO | -25 | - | - | V | Ic = -0.1mA, I B = 0 |
| BV EBO | -5 | - | - | V | I E = -100 μ A, I C = 0 |
| I CBO | - | - | -0.1 | μ A | V CB = -40 V, I E = 0 |
| I CEO | - | - | -0.1 | μ A | V CE = -20V, I B = 0 |
| I EBO | - | - | -0.1 | μ A | V EB = -5V, I C = 0 |
| V CE(sat) | - | - | 0.5 | V | I C = -800 mA, I B = -80mA |
| V BE(sat)1 | - | - | 1.2 | V | I C = -800 mA, I B = -80mA |
| *h FE1 | 120 | - | 350 | - | V CE = -1V, I C =-100mA |
| *h FE2 | 40 | - | - | - | V CE = -1V, I C = -800mA |
| f T | 100 | - | - | MHz | V CE = -10V, I C = -50mA, f = 30MHz |
| C OB | - | - | 20 | pF | V CB = -10V, I E =0, f=1MHz |
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