SS8050

NPN Epitaxial Silicon Transistor

The SS8050 is a npn epitaxial silicon transistor from onsemi. View the full SS8050 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official SS8050 datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

SS8050 Key Specifications

Parameter	Value
Storage Temperature	-65 °C to 150 °C
Collector Current (IC)	1.5 A
Power Dissipation (PD)	1 W
Output Capacitance (Cob)	9 pF typ
Junction Temperature (TJ)	150 °C
Emitter-Base Voltage (VEBO)	6 V
Collector-Base Voltage (VCBO)	40 V
Base-Emitter Saturation Voltage	1.2 V max (IC=800mA, IB=80mA)
Collector Cut-Off Current (ICBO)	100 nA max
Collector-Emitter Voltage (VCEO)	25 V
Current Gain Bandwidth Product (FT)	100 MHz min
Collector-Emitter Saturation Voltage	0.5 V max (IC=800mA, IB=80mA)
Thermal Resistance Junction-To-Ambient	125 °C/W
DC Current Gain HFE2 (VCE=1V, IC=100mA)	85 to 300

SS8050 Overview

Part: SS8050 — onsemi

Type: NPN Epitaxial Silicon Transistor

Description: 1.5 A NPN Epitaxial Silicon Transistor with 25 V Collector-Emitter Voltage, designed for 2 W output amplifier applications in portable radios.

Operating Conditions:

Collector-Emitter Voltage: up to 25 V
Collector-Base Voltage: up to 40 V
Operating temperature: -65 to 150 °C
Collector Current: up to 1.5 A

Absolute Maximum Ratings:

Max Collector-Base Voltage: 40 V
Max Collector-Emitter Voltage: 25 V
Max Emitter-Base Voltage: 6 V
Max continuous Collector Current: 1.5 A
Max Junction Temperature: 150 °C
Max Storage Temperature: -65 to 150 °C

Key Specs:

Collector-Emitter Breakdown Voltage (BV_CEO): 25 V (min, I_C = 2 mA, I_B = 0)
Collector Cut-Off Current (I_CBO): 100 nA (max, V_CB = 35 V, I_E = 0)
DC Current Gain (h_FE2): 85 (min) to 300 (max) (V_CE = 1 V, I_C = 100 mA)
Collector-Emitter Saturation Voltage (V_CE(sat)): 0.5 V (max, I_C = 800 mA, I_B = 80 mA)
Base-Emitter Saturation Voltage (V_BE(sat)): 1.2 V (max, I_C = 800 mA, I_B = 80 mA)
Current Gain Bandwidth Product (f_T): 100 MHz (min, V_CE = 10 V, I_C = 50 mA)
Power Dissipation (P_D): 1 W (T_A = 25 °C)
Thermal Resistance, Junction-to-Ambient (R_θJA): 125 °C/W

Features:

Complementary to SS8550
Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Applications:

2 W Output Amplifier of Portable Radios in Class B Push-Pull Operation

Package:

TO-92-3, case 135AN
TO-92-3, case 135AR

SS8050 Features

Complementary to SS8550
2 W Output Amplifier of Portable Radios in Class B Push-Pull Operation
Collector Current: I C = 1.5 A
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

SS8050 Electrical Characteristics

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV CBO	Collector-Base Breakdown Voltage	I C = 100 m A, I E = 0	40			V
BV CEO	Collector-Emitter Breakdown Voltage	I C = 2 mA, I B = 0	25			V
BV EBO	Emitter-Base Breakdown Voltage	I E = 100 m A, I C = 0	6			V
I CBO	Collector Cut-Off Current	V CB = 35 V, I E = 0			100	nA
I EBO	Emitter Cut-Off Current	V EB = 6 V, I C = 0			100	nA
h FE1	DC Current Gain	V CE = 1 V, I C = 5 mA	45
h FE2		V CE = 1 V, I C = 100 mA	85		300
h FE3		V CE = 1 V, I C = 800 mA	40
V CE (sat)	Collector-Emitter Saturation Voltage	I C = 800 mA, I B = 80 mA			0.5	V
V BE (sat)	Base-Emitter Saturation Voltage	I C = 800 mA, I B = 80 mA			1.2	V
V BE (on)	Base-Emitter On Voltage	V CE = 1 V, I C = 10 mA			1	V
C ob	Output Capacitance	V CB = 10 V, I E = 0, f = 1 MHz		9		pF
f T	Current Gain Bandwidth Product	V CE = 10 V, I C = 50 mA	100			MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

SS8050 Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-Base Voltage	V CBO	40	V
Collector-Emitter Voltage	V CEO	25	V
Emitter-Base Voltage	V EBO	6	V
Collector Current	I C	1.5	A
Junction Temperature	T J	150	° C
Storage Temperature	T STG	-65 to 150	° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

SS8050 Thermal Information

(T A = 25 ° C unless otherwise noted)

Parameter	Symbol	Value	Unit
Power Dissipation	P D	1	W
Derate Above 25 ° C		8	mW/ ° C
Thermal Resistance, Junction-to-Ambient	R q JA	125	° C/W

PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Emitter
Base
Collector

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All BJTs datasheets All onsemi datasheets (337)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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