STTA1206DI
Ultra-Fast High Voltage DiodeThe STTA1206DI is a ultra-fast high voltage diode from STMicroelectronics. View the full STTA1206DI datasheet below including key specifications.
STTA1206DI shares its datasheet with STTA1206D, whose page lists every part number it covers.
Official STTA1206DI datasheet (PDF) — the source this page was extracted from.
Manufacturer
STMicroelectronicsCategory
DiodesSTTA1206DI Key Specifications
| Parameter | Value |
|---|---|
| Insulation Voltage | 2500VRMS |
| Insulation Capacitance | <7pF |
| Storage Temperature Range | -65°C to 150°C |
| Average Forward Current (IF(AV)) | 12A |
| Reverse Recovery Time (Trr, Max) | 55ns |
| Reverse Recovery Time (Trr, Typ) | 28ns |
| Operating Junction Temperature (Max) | 150°C |
| Repetitive Peak Reverse Voltage (VRRM) | 600V |
| Forward Voltage Drop (VF, Max, Tj=25°C) | 1.75V |
| Forward Voltage Drop (VF, Max, Tj=125°C) | 1.5V |
| Surge Non-Repetitive Forward Current (IFSM) | 110A |
| Reverse Leakage Current (IR, Max, Tj=125°C) | 5mA |
| RMS Forward Current (IF(RMS), Insulated TO-220AC) | 20A |
| Junction To Case Thermal Resistance (Insulated TO-220AC) | 3.0°C/W |
STTA1206DI Overview
Part: STTA1206D/DI/G — STMicroelectronics
Type: TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
Description: 12 A average forward current, 600 V repetitive peak reverse voltage, 28 ns typical reverse recovery time, and 1.5 V maximum forward voltage.
Operating Conditions:
- Max operating junction temperature: 150 °C
- Storage temperature: -65 to 150 °C
- Repetitive peak reverse voltage: 600 V
Absolute Maximum Ratings:
- Max reverse voltage: 600 V (V RRM)
- Max RMS forward current: 30 A (TO-220AC / D2PAK)
- Max junction temperature: 150 °C
- Max storage temperature: 150 °C
Key Specs:
- Repetitive peak reverse voltage (V RRM): 600 V
- Average forward current (I F(AV)): 12 A
- RMS forward current (I F(RMS)): 30 A (TO-220AC / D2PAK)
- Forward voltage drop (V F): 1.5 V (max, Tj = 125°C, I F =12A)
- Reverse recovery time (t rr): 28 ns (typ, Tj = 25°C, I F = 0.5 A, I R = 1A, Irr = 0.25A, I F = 1 A dI F /dt =-50A/μs V R =30V)
- Reverse leakage current (I R): 5 mA (max, V R =0.8 x V RRM, Tj = 125°C)
- Dynamic resistance (rd): 29 mΩ
- Junction to case thermal resistance (R th(j-c)): 1.9 °C/W (TO-220AC / D 2 PAK)
Features:
- Specific to 'freewheel mode' operations: freewheel or booster diode.
- Ultra-fast and soft recovery.
- Very low overall power losses in both the diode and the companion transistor.
- High frequency operations.
- Insulated package: TO-220AC (Electrical insulation: 2500VRMS, Capacitance < 7 pF).
Applications:
- Motor control freewheel applications.
- Booster diode applications in power factor control circuitries.
- Use on 240V domestic mains.
Package:
- TO-220AC
- TO-220AC Ins.
- D2PAK
STTA1206DI Thermal Information
| Symbol | Parameter | Test conditions | Test conditions | Value | Unit |
|---|---|---|---|---|---|
| R th(j-c) | Junction to case thermal resistance | TO-220AC / D 2 PAK TO-220AC ins. | 1.9 3.0 | °C/W | |
| P 1 | Conduction power dissipation I F(AV) = 12A d =0.5 | TO-220AC / D 2 PAK TO-220AC ins. | Tc= 108°C Tc= 84°C | 22 | W |
| P max | Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) | TO-220AC /D 2 PAK TO-220AC ins. | Tc= 104°C Tc= 78°C | 24 | W |
| Symbol | Parameter | Test conditions | Test conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| V F * | Forward voltage drop | I F =12A | Tj = 25°C Tj = 125°C | 1.25 | 1.75 1.5 | V V | |
| I R ** | Reverse leakage current | V R =0.8 x V RRM | Tj = 25°C Tj = 125°C | 2 | 100 5 | m A mA | |
| V to | Threshold voltage | Ip < 3.I AV | Tj = 125°C | 1.15 | V | ||
| rd | Dynamic resistance | 29 | m W |
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| t rr | Reverse recovery time | Tj = 25°C I F = 0.5 A I R = 1A Irr = 0.25A I F = 1 A dI F /dt =-50A/ m s V R =30V | 28 | 55 | ns | |
| I RM | Maximum reverse recovery current | Tj = 125°C VR = 400V I F =12A dI F /dt = -96 A/ m s dI F /dt = -500 A/ m s | 16 | 7.5 | A | |
| S factor | Softness factor | Tj = 125°C V R = 400V I F =12A dI F /dt = -500 A/ m s | 0.45 | - |
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All Diodes datasheetsAll STMicroelectronics datasheets (808)
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