SSM3J332R,LF

Part: SSM3J332R — Toshiba

Type: P-Channel MOSFET

Description: P-Channel MOSFET with a 1.8 V gate drive voltage, featuring a drain-source breakdown voltage of -30 V and a continuous drain current of -6 A, with a minimum on-resistance of 42 mΩ at VGS = -10 V.

Operating Conditions:

• Operating temperature: -55 to 150 °C
• Gate drive voltage: 1.8 V

Absolute Maximum Ratings:

• Max drain-source voltage: -30 V
• Max continuous drain current: -6 A
• Max channel temperature: 150 °C
• Max storage temperature: 150 °C

Key Specs:

• Gate leakage current: ±1 μA (max) @ VGS = ±10 V, VDS = 0 V
• Drain-source breakdown voltage: -30 V (min) @ ID = -10 mA, VGS = 0 V
• Gate threshold voltage: -0.5 V (min) to -1.2 V (max) @ VDS = -3 V, ID = -1 mA
• Drain-source on-resistance: 42 mΩ (max) @ ID = -5 A, VGS = -10 V
• Drain-source on-resistance: 50 mΩ (max) @ ID = -4 A, VGS = -4.5 V
• Drain-source on-resistance: 144 mΩ (max) @ ID = -0.5 A, VGS = -1.8 V
• Input capacitance: 560 pF (typ) @ VDS = -15 V, VGS = 0 V, f = 1 MHz
• Turn-on time: 15 ns (typ) @ VDD = -15 V, ID = -2 A, VGS = 0 to -4.5 V
• Total gate charge: 8.2 nC (typ) @ VDD = -15 V, VGS = -4.5 V, ID = -6 A

Features:

• 1.8 V gate drive voltage
• Low drain-source on-resistance

Applications:

• Power Management Switches

Package:

• Weight: 0.011 g (typ.)

• (1) 1.8 V gate drive voltage.
• (2) Low drain-source on-resistance

: RDS(ON) = 144 m Ω (max) (@VGS = -1.8 V)

RDS(ON) = 72.0 m Ω (max) (@VGS = -2.5 V)

RDS(ON) = 50.0 m Ω (max) (@VGS = -4.5 V)

RDS(ON) = 42.0 m Ω (max) (@VGS = -10 V)

• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE").

Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant.

IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.

For details, please contact your TOSHIBA sales representative or contact us via our website.

• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Ensure that the channel temperature does not exceed 150 �

Note 2: Pulse width (PW) ≤ 1 ms, duty ≤ 1%

Note 3: Device mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm 2 )

Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge.

Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account.

Note 1: Device mounted on an 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm 2 )

Unit: mm

Weight: 0.011 g (typ.)