SSM3J332R,LF

SSM3J332R

Manufacturer

Toshiba Semiconductor and Storage

Category

Discrete Semiconductor Products

Package

SOT-23-3 Flat Leads

Lifecycle

Active

Overview

Part: SSM3J332R, Toshiba Corporation

Type: P-Channel MOS MOSFET

Key Specs:

  • Drain-source voltage: -30 V
  • Gate-source voltage: ±12 V
  • Drain current (DC): -6 A
  • Drain-source on-resistance: 42.0 mΩ (max) (@VGS = -10 V)
  • Power dissipation: 2 W (t < 10s)

Features:

  • 1.8 V gate drive voltage.
  • Low drain-source on-resistance

Applications:

  • Power Management Switches

Package:

  • SOT-23F: dimensions not specified

Features

  • (1) 1.8 V gate drive voltage.
  • (2) Low drain-source on-resistance
    • : RDS(ON) = 144 m Ω (max) (@VGS = -1.8 V) RDS(ON) = 72.0 m Ω (max) (@VGS = -2.5 V) RDS(ON) = 50.0 m Ω (max) (@VGS = -4.5 V) RDS(ON) = 42.0 m Ω (max) (@VGS = -10 V)

Applications

• Power Management Switches

2. Features

  • (1) 1.8 V gate drive voltage.
  • (2) Low drain-source on-resistance
    • : RDS(ON) = 144 m Ω (max) (@VGS = -1.8 V) RDS(ON) = 72.0 m Ω (max) (@VGS = -2.5 V) RDS(ON) = 50.0 m Ω (max) (@VGS = -4.5 V) RDS(ON) = 42.0 m Ω (max) (@VGS = -10 V)

Pin Configuration

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 � )

CharacteristicsRatingUnit
Drain-source voltageVDSS-30V
Gate-source voltageVGSS±12
Drain current (DC)(Note 1)ID-6A
Drain current (pulsed)(Note 1), (Note 2)IDP-24
Power dissipation(Note 3)PD1W
Power dissipationt < 10s(Note 3)PD2
Channel temperatureTch150�
Storage temperatureTstg-55 to 150

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

  • Note 1: Ensure that the channel temperature does not exceed 150 �
  • Note 2: Pulse width (PW) ≤1 ms, duty ≤ 1%
  • Note 3: Device mounted on a FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm 2 )

  • Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge.
  • Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, P D, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account.

5. Thermal Characteristics

CharacteristicsSymbolMaxUnit

Note 1: Device mounted on an 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm 2 )

Electrical Characteristics

6.1. Static Characteristics (Unless otherwise specified, T a = 25 � )

CharacteristicsSymbolTest ConditionMinTyp.MaxUnit
Gate leakage currentIGSSVGS = ±10 V, VDS = 0 V--±1μA
Drain cut-off currentIDSSVDS = -30 V, VGS = 0 V---1μA
Drain-source breakdown voltageV(BR)DSSID = -10 mA, VGS = 0 V-30--V
Drain-source breakdown voltage(Note 1)V(BR)DSXID = -10 mA, VGS = 8 V-22--V
Gate threshold voltage(Note 2)VthVDS = -3 V, ID = -1 mA-0.5--1.2V
Drain-source on-resistance(Note 3)RDS(ON)ID = -5 A, VGS = -10 V-3642mΩ
ID = -4 A, VGS = -4.5 V-42.550mΩ
ID = -2.5 A, VGS = -2.5 V-57.572mΩ
ID = -0.5 A, VGS = -1.8 V-76.5144mΩ
Forward transfer admittance(Note 3)YfsVDS = -3 V, ID = -2.5 A5.711.3-S

Note 1: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.

Note 3: Pulse measurement.

6.2. Dynamic Characteristics (Unless otherwise specified, T a = 25 � )

CharacteristicsSymbolTest ConditionMinTyp.MaxUnit
Input capacitanceCissVDS = -15 V, VGS = 0 V,�560�pF
Reverse transfer capacitanceCrssf = 1 MHz�65�
Output capacitanceCoss�80�
Switching time (turn-on time)tonVDD = -15 V, I
D = -2 A,
VGS = 0 to -4.5 V, RGS = 10
Ω
,		�15�ns
Switching time (turn-off time)toffDuty
≤ 1 %, VIN: t
, t
< 5 ns,
r
f
Common source		�75�

Absolute Maximum Ratings

CharacteristicsRatingUnit
Drain-source voltageVDSS-30V
Gate-source voltageVGSS±12
Drain current (DC)(Note 1)ID-6A
Drain current (pulsed)(Note 1), (Note 2)IDP-24
Power dissipation(Note 3)PD1W
Power dissipationt < 10s(Note 3)PD2
Channel temperatureTch150�
Storage temperatureTstg-55 to 150

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

  • Note 1: Ensure that the channel temperature does not exceed 150 �
  • Note 2: Pulse width (PW) ≤1 ms, duty ≤ 1%
  • Note 3: Device mounted on a FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm 2 )

  • Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge.
  • Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, P D, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account.

Thermal Information

CharacteristicsSymbolMaxUnit

Note 1: Device mounted on an 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm 2 )

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
SSM3J332RToshiba Semiconductor and Storage—
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