onsemi Datasheets
337 onsemi datasheets read into specs, pinouts and ratings, including BJTs, Diodes and Linear Regulators (LDO).
onsemi datasheets, page 2
337 parts · page 2 of 12. Most used first, then by part number.
2SC5242
onsemi
High-voltage (250 V), 17 A NPN epitaxial silicon power transistor with 150 W dissipation and 30 MHz bandwidth, intended for high-fidelity audio output amplifiers
2SC5706
onsemi
50V, 5A NPN bipolar transistor with low collector-to-emitter saturation voltage, for DC/DC converters, relay/lamp/motor drivers and flash applications (PNP complement 2SA2039).
2SC6082
onsemi
50 V, 15 A low collector-to-emitter saturation voltage NPN bipolar transistor for high-speed switching applications such as switching regulators and driver circuits
BAT54CWT1G
onsemi
DIODE ARR SCHOTT 30V 200MA SC703
BAT54SL
onsemi
30 V dual series Schottky barrier diode in SOT-23 for high speed switching, circuit protection and voltage clamping, with extremely low forward voltage and fast switching.
BC327
onsemi
PNP epitaxial silicon BJT for switching and amplifier applications, suitable for AF driver stages and low-power output stages; complement to BC337/BC338.
BC32725BU
onsemi
PNP epitaxial silicon BJT for switching and amplifier applications, suitable for AF driver stages and low-power output stages; complement to BC337/BC338
BC32725TA
onsemi
PNP epitaxial silicon BJT for switching and amplifier applications, suitable for AF driver stages and low-power output stages; complement to BC337/BC338
BC32740BU
onsemi
PNP epitaxial silicon BJT for switching and amplifier applications, suitable for AF driver stages and low-power output stages; complement to BC337/BC338.
BC327BU
onsemi
PNP epitaxial silicon BJT for switching and amplifier applications, suitable for AF driver stages and low-power output stages; complement to BC337/BC338
BC546
onsemi
General-purpose NPN silicon small-signal amplifier transistor in TO-92 package, 65V VCEO with DC current gain up to 800
BC546B
onsemi
General-purpose NPN silicon small-signal amplifier transistor with 65 V collector-emitter breakdown voltage (BC546), hFE of 200-450 in B grade, and 300 MHz typical transition frequency
BC546BG
onsemi
General-purpose NPN silicon small-signal amplifier transistor (BC546B, Pb-Free) in a TO-92 package, 65V VCEO with hFE 200-450
BC547
onsemi
General-purpose NPN silicon BJT amplifier transistor in TO-92 package, 45 V VCEO, for small-signal amplification
BC547A
onsemi
General-purpose NPN silicon small-signal amplifier transistor (BC546/547/548 family) in TO-92, 45 V VCEO for BC547, with DC gain groups A/B/C
BC547B
onsemi
General-purpose NPN silicon BJT amplifier transistor in TO-92 package, part of BC546/547/548 family with 45V VCEO and hFE 200-450 for the B gain grade
BC547C
onsemi
General-purpose NPN silicon small-signal amplifier transistor (BC547 series) with 45V VCEO, high-gain C grade (hFE 420-800 at 2 mA)
BC548
onsemi
General-purpose NPN silicon small-signal amplifier transistor (BC546/547/548 family) with 30V VCEO for BC548 and up to 800 hFE.
BC548B
onsemi
General-purpose NPN silicon small-signal amplifier transistor with 30V collector-emitter breakdown (BC548 variant) in a TO-92 package
BC846-BC848
onsemi
SOT-23 plastic-encapsulate NPN small-signal transistors (BC846/BC847/BC848 series) with 100mA collector current and 200mW dissipation, complementary to BC856-BC858
BC846A
onsemi
NPN silicon plastic-encapsulate transistor in SOT-23, 80V collector-base, 100mA collector current, 200mW dissipation, hFE group A (110-220)
BC846B
onsemi
SOT-23 plastic-encapsulate NPN bipolar transistor, 65V VCEO, 100mA collector current, 200mW dissipation, hFE group B (200-450)
BC847A
onsemi
BC847AM
onsemi
BC847AT
onsemi
BC847AW
onsemi
BC847B
onsemi
BC847BM
onsemi
BC847BT
onsemi
BC847BW
onsemi