BAT54SLT1G
Schottky Barrier DiodeThe BAT54SLT1G is a schottky barrier diode from onsemi. View the full BAT54SLT1G datasheet below including key specifications, absolute maximum ratings.
Official BAT54SLT1G datasheet (PDF) — the source this page was extracted from.
BAT54SLT1G Key Specifications
| Parameter | Value |
|---|---|
| Average Rectified Current | 200mA (DC) |
| Reverse Leakage Current | 2 µA @ 25 V |
| Diode Configuration | 1 Pair Series Connection |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 125°C (Max) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Reverse Recovery Time | 5 ns |
| Clock Speed | Small Signal =< 200mA (Io), Any Speed Hz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Diode Technology | Schottky |
| Reverse Voltage (Max) | 30 V |
| Forward Voltage (Max) | 800 mV @ 100 mA |
BAT54SLT1G Overview
Part: BAT54SLT1G — onsemi
Type: Dual Series Schottky Barrier Diode
Description: 30 V dual series Schottky barrier diode with a typical forward voltage of 0.35 V at 10 mA, 200 mA DC forward current, and fast switching (trr ≤ 5 ns) in a SOT-23 package.
Operating Conditions:
- Supply voltage: not applicable
- Operating temperature: -55 to 150 °C (junction temperature range, TJ)
- Reverse voltage: up to 30 V; forward current up to 200 mA DC
Absolute Maximum Ratings:
- Max reverse voltage (VR): 30 V
- Max continuous forward current (IF): 200 mA
- Non-repetitive peak forward current (IFSM): 600 mA (tp < 10 ms), 1.0 A (square pulse = 1 s)
- Repetitive peak forward current (IFRM): 300 mA
- Forward power dissipation (PF): 225 mW at TA = 25 °C, derate 1.8 mW/°C above 25 °C
- Max junction temperature: 150 °C
- Storage temperature: -55 to +150 °C
Key Specs:
- Reverse breakdown voltage V(BR)R: 30 V min (IR = 10 μA)
- Forward voltage VF (each diode, TA = 25 °C): 0.22 V typ / 0.24 V max at 0.1 mA; 0.35 V typ / 0.40 V max at 10 mA; 0.52 V typ / 0.80 V max at 100 mA
- Reverse leakage IR: 0.15 μA typ, 2.0 μA max (VR = 25 V)
- Total capacitance CT: 7.6 pF typ, 10 pF max (VR = 1 V, f = 1 MHz)
- Reverse recovery time trr: 5.0 ns max (IF = IR = 10 mA, IR(REC) = 1.0 mA)
Features:
- Extremely fast switching speed
- Low forward voltage: 0.35 V typ at IF = 10 mA
- S-prefix (SBAT54SLT1G) is AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
- Pb-free, halogen free/BFR free, and RoHS compliant
Applications:
- High-speed switching
- Circuit protection
- Voltage clamping
- Handheld and portable applications where space is limited
Package:
- SOT-23 (TO-236), Case 318, 2.90 x 1.30 x 1.00 mm, 1.90 mm pitch, Pb-free; 3,000 units per tape and reel
BAT54SLT1G Features
- Extremely Fast Switching Speed
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC -Q101 Qualified and PPAP Capable
- Low Forward Voltage -0.35 V (Typ) @ I F = 10 mAdc
- These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant
BAT54SLT1G Absolute Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Voltage | V R | 30 | V |
| Forward Power Dissipation @T A = 25 ° C Derate above 25 ° C | P F | 225 1.8 | mW mW/ ° C |
| Forward Current (DC) | I F | 200 Max | mA |
| Non - Repetitive Peak Forward Current t p < 10 msec Square pulse = 1 sec | I FSM | 600 1.0 | mA A |
| Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% | I FRM | 300 | mA |
| Junction Temperature | T J | - 55 to 150 | ° C |
| Storage Temperature Range | T stg | - 55 to +150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| BAT54SL | onsemi | SOT-23 |
| SBAT54SLT1G | onsemi | TO-236-3, SC-59, SOT-23-3 |
Other Diodes
- CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
- SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
- BSD3A311V – Brightking, ESD Protection Diode
- CH213K – WCH, Low Dropout Ideal Diode Chip
- VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)
Ask your AI agent about the BAT54SLT1G
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp
Then ask: "Can the BAT54SLT1G run from my 12 V rail? Check it against the datasheet limits."
Create a free account $2 of usage every month, no card needed.