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SBAT54SLT1G

Schottky Barrier Diode

The SBAT54SLT1G is a schottky barrier diode from onsemi. View the full SBAT54SLT1G datasheet below including absolute maximum ratings.

Manufacturer

onsemi

Category

Schottky Barrier Diode

Package

SOT-23 (Pb-Free)

Overview

Part: BAT54SLT1G — onsemi

Type: Dual Series Schottky Barrier Diodes

Description: 30 V, 200 mA dual series Schottky barrier diodes featuring extremely fast switching speed and low forward voltage, suitable for high speed switching, circuit protection, and voltage clamping applications.

Operating Conditions:

  • Reverse voltage: 30 V
  • Operating temperature: -55 to 150 °C
  • Max forward current: 200 mA

Absolute Maximum Ratings:

  • Max reverse voltage: 30 V
  • Max continuous current: 200 mA
  • Max junction/storage temperature: 150 °C

Key Specs:

  • Reverse Breakdown Voltage: 30 V (I_R = 10 mA)
  • Total Capacitance: 7.6 pF (Typ) (V_R = 1.0 V, f = 1.0 MHz)
  • Reverse Leakage: 0.15 mAdc (Typ) (V_R = 25 V)
  • Forward Voltage: 0.35 V (Typ) (I_F = 10 mA)
  • Forward Voltage: 0.52 V (Typ) (I_F = 100 mA)
  • Reverse Recovery Time: 5.0 ns (Max) (I_F = I_R = 10 mAdc, I_R(REC) = 1.0 mAdc)

Features:

  • Extremely Fast Switching Speed
  • Low Forward Voltage - 0.35 V (Typ) @ I_F = 10 mAdc
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Applications:

  • High speed switching applications
  • Circuit protection
  • Voltage clamping

Package:

  • SOT-23 (Pb-Free)

Features

  • Extremely Fast Switching Speed
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC -Q101 Qualified and PPAP Capable
  • Low Forward Voltage -0.35 V (Typ) @ I F = 10 mAdc
  • These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant

Absolute Maximum Ratings

RatingSymbolValueUnit
Reverse VoltageV R30V
Forward Power Dissipation @T A = 25 ° C Derate above 25 ° CP F225 1.8mW mW/ ° C
Forward Current (DC)I F200 MaxmA
Non - Repetitive Peak Forward Current t p < 10 msec Square pulse = 1 secI FSM600 1.0mA A
Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66%I FRM300mA
Junction TemperatureT J- 55 to 150° C
Storage Temperature RangeT stg- 55 to +150° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Package Information

SCALE 4:1

XXX = Specific Device Code

  • M = Date Code
  • G = Pb -Free Package

*This information is generic. Please refer to device data sheet for actual part marking. Pb -Free indicator, 'G' or microdot ' G ', may or may not be present. Some products may not follow the Generic Marking.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
BAT54SLonsemi
BAT54SLT1GonsemiSOT-23
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