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BAT54CWT1G

Schottky Barrier Diode

The BAT54CWT1G is a schottky barrier diode from onsemi. View the full BAT54CWT1G datasheet below including key specifications, absolute maximum ratings.

Official BAT54CWT1G datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

Diodes

Package

SC-70, SOT-323

Lifecycle

Active

BAT54CWT1G Key Specifications

ParameterValue
Average Rectified Current200 mA
Capacitance7.6 pF
Case/PackageSOT-323
China RoHSCompliant
Contact PlatingTin
Average Rectified Current200mA (DC)
Reverse Leakage Current2 µA @ 25 V
Current Rating200 mA
Diode Configuration1 Pair Common Cathode
Element ConfigurationCommon Cathode
Forward Current200 mA
Forward Voltage240 mV
Height1 mm
Introduction Date2004-05-01
Lead FreeLead Free
Length2.2 mm
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Max Forward Surge Current (Ifsm)600 mA
Max Junction Temperature (Tj)125 °C
Max Operating Temperature125 °C
Max Output Current200 mA
Max Power Dissipation200 mW
Max Repetitive Reverse Voltage (Vrrm)30 V
Max Reverse Leakage Current2 µA
Max Reverse Voltage (DC)30 V
Max Surge Current600 mA
Min Operating Temperature-65 °C
MountSurface Mount
Mounting TypeSurface Mount
Number of Elements2
Number of Pins3
Number of Terminals3
Operating Temperature - Junction-55°C ~ 125°C
Package / CaseSC-70, SOT-323
PackagingTape and Reel
Peak Non-Repetitive Surge Current600 mA
Peak Reverse Current2 µA
Power Dissipation200 mW
Radiation HardeningNo
REACH SVHCYes
Recovery Time5 ns
Reverse Recovery Time5 ns
Reverse Recovery Time5 ns
Reverse Standoff Voltage30 V
Reverse Voltage30 V
RoHSCompliant
Schedule B8541100070, 8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|85
Clock SpeedSmall Signal =< 200mA (Io), Any Speed Hz
Supplier Device PackageSC-70-3 (SOT323)
Diode TechnologySchottky
Reverse Voltage (Max)30 V
Forward Voltage (Max)800 mV @ 100 mA
Voltage Rating (DC)30 V
Weight30 mg
Width1.35 mm

BAT54CWT1G Overview

Part: BAT54CWT1G — onsemi

Type: Dual Common Cathode Schottky Barrier Diode

Description: 30 V dual common cathode Schottky barrier diode in a SOT-323 package, with 0.35 V (typ) forward voltage at 10 mA, 200 mA DC forward current, and a 5 ns maximum reverse recovery time.

Operating Conditions:

  • Supply voltage: not applicable
  • Operating junction temperature: -55 to 125 °C
  • Reverse voltage: up to 30 V

Absolute Maximum Ratings:

  • Max reverse voltage (VR): 30 V
  • Max continuous forward current (IF, DC): 200 mA
  • Non-repetitive peak forward current (IFSM, tp < 10 ms): 600 mA
  • Repetitive peak forward current (IFRM): 300 mA
  • Max forward power dissipation (TA = 25 °C): 200 mW (derate 2.0 mW/°C above 25 °C)
  • Max junction temperature: 125 °C
  • Storage temperature: -55 to +150 °C

Key Specs:

  • Reverse breakdown voltage (IR = 10 µA): 30 V min
  • Forward voltage (each diode, TA = 25 °C): 0.22 V typ / 0.24 V max at 0.1 mA; 0.35 V typ / 0.40 V max at 10 mA; 0.52 V typ / 0.80 V max at 100 mA
  • Reverse leakage (VR = 25 V): 0.5 µA typ, 2.0 µA max
  • Total capacitance (VR = 1.0 V, f = 1.0 MHz): 7.6 pF typ, 10 pF max
  • Reverse recovery time (IF = IR = 10 mA, IR(REC) = 1.0 mA): 5.0 ns max

Features:

  • Extremely fast switching speed
  • Low forward voltage: 0.35 V (typ) at IF = 10 mA
  • S-prefix variants are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
  • Pb-free, halogen free/BFR free, and RoHS compliant

Applications:

  • High-speed switching
  • Circuit protection
  • Voltage clamping
  • Hand-held and portable applications where space is limited

Package:

  • SOT-323 (SC-70), Case 419, Style 5 (3 pins: anode, anode, cathode)
  • Shipping: 3,000 / tape & reel (BAT54CWT1G)

BAT54CWT1G Features

  • Extremely Fast Switching Speed
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC -Q101 Qualified and PPAP Capable
  • Low Forward Voltage -0.35 V (Typ) @ I F = 10 mAdc
  • These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant

BAT54CWT1G Absolute Maximum Ratings

RatingSymbolValueUnit
Reverse VoltageV R30V
Forward Power Dissipation @T A = 25 ° C Derate above 25 ° CP F200 2.0mW mW/ ° C
Forward Current (DC)I F200 MaxmA
Non - Repetitive Peak Forward Current t p < 10 msecI FSM600mA
Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66%I FRM300mA
Junction TemperatureT J- 55 to 125° C
Storage Temperature RangeT stg- 55 to +150° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll onsemi datasheets (337)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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