BAT54CWT1G
Schottky Barrier DiodeThe BAT54CWT1G is a schottky barrier diode from onsemi. View the full BAT54CWT1G datasheet below including key specifications, absolute maximum ratings.
Official BAT54CWT1G datasheet (PDF) — the source this page was extracted from.
BAT54CWT1G Key Specifications
| Parameter | Value |
|---|---|
| Average Rectified Current | 200 mA |
| Capacitance | 7.6 pF |
| Case/Package | SOT-323 |
| China RoHS | Compliant |
| Contact Plating | Tin |
| Average Rectified Current | 200mA (DC) |
| Reverse Leakage Current | 2 µA @ 25 V |
| Current Rating | 200 mA |
| Diode Configuration | 1 Pair Common Cathode |
| Element Configuration | Common Cathode |
| Forward Current | 200 mA |
| Forward Voltage | 240 mV |
| Height | 1 mm |
| Introduction Date | 2004-05-01 |
| Lead Free | Lead Free |
| Length | 2.2 mm |
| Lifecycle Status | Production (Last Updated: 5 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 years ago) |
| Max Forward Surge Current (Ifsm) | 600 mA |
| Max Junction Temperature (Tj) | 125 °C |
| Max Operating Temperature | 125 °C |
| Max Output Current | 200 mA |
| Max Power Dissipation | 200 mW |
| Max Repetitive Reverse Voltage (Vrrm) | 30 V |
| Max Reverse Leakage Current | 2 µA |
| Max Reverse Voltage (DC) | 30 V |
| Max Surge Current | 600 mA |
| Min Operating Temperature | -65 °C |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Number of Elements | 2 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Operating Temperature - Junction | -55°C ~ 125°C |
| Package / Case | SC-70, SOT-323 |
| Packaging | Tape and Reel |
| Peak Non-Repetitive Surge Current | 600 mA |
| Peak Reverse Current | 2 µA |
| Power Dissipation | 200 mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Recovery Time | 5 ns |
| Reverse Recovery Time | 5 ns |
| Reverse Recovery Time | 5 ns |
| Reverse Standoff Voltage | 30 V |
| Reverse Voltage | 30 V |
| RoHS | Compliant |
| Schedule B | 8541100070, 8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|85 |
| Clock Speed | Small Signal =< 200mA (Io), Any Speed Hz |
| Supplier Device Package | SC-70-3 (SOT323) |
| Diode Technology | Schottky |
| Reverse Voltage (Max) | 30 V |
| Forward Voltage (Max) | 800 mV @ 100 mA |
| Voltage Rating (DC) | 30 V |
| Weight | 30 mg |
| Width | 1.35 mm |
BAT54CWT1G Overview
Part: BAT54CWT1G — onsemi
Type: Dual Common Cathode Schottky Barrier Diode
Description: 30 V dual common cathode Schottky barrier diode in a SOT-323 package, with 0.35 V (typ) forward voltage at 10 mA, 200 mA DC forward current, and a 5 ns maximum reverse recovery time.
Operating Conditions:
- Supply voltage: not applicable
- Operating junction temperature: -55 to 125 °C
- Reverse voltage: up to 30 V
Absolute Maximum Ratings:
- Max reverse voltage (VR): 30 V
- Max continuous forward current (IF, DC): 200 mA
- Non-repetitive peak forward current (IFSM, tp < 10 ms): 600 mA
- Repetitive peak forward current (IFRM): 300 mA
- Max forward power dissipation (TA = 25 °C): 200 mW (derate 2.0 mW/°C above 25 °C)
- Max junction temperature: 125 °C
- Storage temperature: -55 to +150 °C
Key Specs:
- Reverse breakdown voltage (IR = 10 µA): 30 V min
- Forward voltage (each diode, TA = 25 °C): 0.22 V typ / 0.24 V max at 0.1 mA; 0.35 V typ / 0.40 V max at 10 mA; 0.52 V typ / 0.80 V max at 100 mA
- Reverse leakage (VR = 25 V): 0.5 µA typ, 2.0 µA max
- Total capacitance (VR = 1.0 V, f = 1.0 MHz): 7.6 pF typ, 10 pF max
- Reverse recovery time (IF = IR = 10 mA, IR(REC) = 1.0 mA): 5.0 ns max
Features:
- Extremely fast switching speed
- Low forward voltage: 0.35 V (typ) at IF = 10 mA
- S-prefix variants are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
- Pb-free, halogen free/BFR free, and RoHS compliant
Applications:
- High-speed switching
- Circuit protection
- Voltage clamping
- Hand-held and portable applications where space is limited
Package:
- SOT-323 (SC-70), Case 419, Style 5 (3 pins: anode, anode, cathode)
- Shipping: 3,000 / tape & reel (BAT54CWT1G)
BAT54CWT1G Features
- Extremely Fast Switching Speed
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC -Q101 Qualified and PPAP Capable
- Low Forward Voltage -0.35 V (Typ) @ I F = 10 mAdc
- These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant
BAT54CWT1G Absolute Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Voltage | V R | 30 | V |
| Forward Power Dissipation @T A = 25 ° C Derate above 25 ° C | P F | 200 2.0 | mW mW/ ° C |
| Forward Current (DC) | I F | 200 Max | mA |
| Non - Repetitive Peak Forward Current t p < 10 msec | I FSM | 600 | mA |
| Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% | I FRM | 300 | mA |
| Junction Temperature | T J | - 55 to 125 | ° C |
| Storage Temperature Range | T stg | - 55 to +150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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- VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- USBLC6-2SC6 – STMicroelectronics, ESD Protection Device
Ask your AI agent about the BAT54CWT1G
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
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Then ask: "Can the BAT54CWT1G run from my 12 V rail? Check it against the datasheet limits."
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